Results 111 to 120 of about 377 (127)
Preparation and characterization of clay based ceramic porous membranes and their use for the removal of lead ions from synthetic wastewater with an insight into the removal mechanism. [PDF]
HeliyonKhalil AKA +5 more
europepmc +1 more source
Bilipid membrane phase characterization by reflectance anisotropy spectroscopy (RAS)
Proceedings of SPIE, 2013 In this work we propose the use of experimental and theoretical reflectance anisotropy spectra (RAS) as a new tool to identify structural and dynamical aspects of the bilipid membrane and its various constituent molecules. The role of geometric details at the atomic level and macroscopic quantities, such as the membrane curvature and tilt for the ...
A C Ferraz +2 more
exaly +4 more sources
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Monitoring of (reactive) ion etching (RIE) with reflectance anisotropy spectroscopy (RAS) equipment
Applied Surface Science, 2015Abstract Experimental results on the application of reflectance anisotropy spectroscopy (RAS) to the monitoring of (reactive) ion etching of monocrystalline semiconductor samples are described. To show the potential of this technique RAS signals collected during etching of GaAs/AlxGa1−xAs multilayer samples are compared to RAS data obtained before ...
Lars Barzen, Henning Fouckhardt
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Growth control of Ga(As)Sb quantum dots (QD) on GaAs with reflectance anisotropy spectroscopy (RAS)
Proceedings of SPIE, 2014Ga(As)Sb quantum dots (QDs) are grown on GaAs substrate in the Stranski-Krastanov mode. The molecular beam epitaxial (MBE) growth is monitored by reflectance anisotropy spectroscopy (RAS). For certain photon energies of the light used for RAS, the RAS signal values for GaAs layers, GaSb layers, and Ga(As)Sb QD surface morphologies can clearly be ...
Henning Fouckhardt
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Proceedings of SPIE, 2017
Reflectance anisotropy spectroscopy (RAS) allows for in-situ monitoring of reactive ion etching (RIE) of monocrystalline III-V semiconductor surfaces. Upon use of RAS the sample to be etched is illuminated with broad-band linearly polarized light under nearly normal incidence. Commonly the spectral range is between 1.5 and 5.5 eV.
Christoph Doering +2 more
exaly +2 more sources
Reflectance anisotropy spectroscopy (RAS) allows for in-situ monitoring of reactive ion etching (RIE) of monocrystalline III-V semiconductor surfaces. Upon use of RAS the sample to be etched is illuminated with broad-band linearly polarized light under nearly normal incidence. Commonly the spectral range is between 1.5 and 5.5 eV.
Christoph Doering +2 more
exaly +2 more sources
Reflectance anisotropy spectroscopy on the Ge(113) surface
Surface Science, 1996 The clean and hydrogenated Ge(113) surface was investigated using reflectance anisotropy spectrosopy (RAS). Surface-induced optical transitions related to the 3 × 2 reconstruction of the clean surface were identified.
K Jacobi, J -T Zettler
exaly +2 more sources
Formation of GaAsP interface layers monitored by reflectance anisotropy spectroscopy
Journal of Electronic Materials, 1997P Kurpas, A Oster, M Weyers
exaly