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Growth control of Ga(As)Sb quantum dots (QD) on GaAs with reflectance anisotropy spectroscopy (RAS)
Proceedings of SPIE, 2014Ga(As)Sb quantum dots (QDs) are grown on GaAs substrate in the Stranski-Krastanov mode. The molecular beam epitaxial (MBE) growth is monitored by reflectance anisotropy spectroscopy (RAS). For certain photon energies of the light used for RAS, the RAS signal values for GaAs layers, GaSb layers, and Ga(As)Sb QD surface morphologies can clearly be ...
Henning Fouckhardt
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Proceedings of SPIE, 2017
Reflectance anisotropy spectroscopy (RAS) allows for in-situ monitoring of reactive ion etching (RIE) of monocrystalline III-V semiconductor surfaces. Upon use of RAS the sample to be etched is illuminated with broad-band linearly polarized light under nearly normal incidence. Commonly the spectral range is between 1.5 and 5.5 eV.
Henning Fouckhardt +2 more
exaly +2 more sources
Reflectance anisotropy spectroscopy (RAS) allows for in-situ monitoring of reactive ion etching (RIE) of monocrystalline III-V semiconductor surfaces. Upon use of RAS the sample to be etched is illuminated with broad-band linearly polarized light under nearly normal incidence. Commonly the spectral range is between 1.5 and 5.5 eV.
Henning Fouckhardt +2 more
exaly +2 more sources
Reflectance anisotropy spectroscopy on the Ge(113) surface
Surface Science, 1996 The clean and hydrogenated Ge(113) surface was investigated using reflectance anisotropy spectrosopy (RAS). Surface-induced optical transitions related to the 3 × 2 reconstruction of the clean surface were identified.
J -T Zettler
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Formation of GaAsP interface layers monitored by reflectance anisotropy spectroscopy
Journal of Electronic Materials, 1997Markus Weyers, P Kurpas, A Oster
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The initial stages of Ge growth on vicinal Si(001) studied by reflectance anisotropy spectroscopy
Surface Science, 1999Peter Weightman +2 more
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