Results 121 to 130 of about 8,702 (250)

Adjusting Nucleation Chemistry for the Atomic Layer Deposition of Antimony Selenide on Metal Oxide Surfaces

open access: yesAdvanced Engineering Materials, EarlyView.
The ALD precursor bis(trimethylsilyl)selenide is simultaneously a substrate surface inhibitor. It allows for the growth of Sb2Se3 in combination with tris(dimethylamido)antimony, but also silylates surface hydroxyl groups on the substrate if such hydroxyls are present.
Pei‐Chun Liao   +9 more
wiley   +1 more source

Pressure-Induced Suppression of the Diffuse Scattering in the Model Relaxor Ferroelectric PbMg1/3Nb2/3O3

open access: yes, 2003
International audienceWe report an investigation of the relaxor ferroelectric PbMg1/3Nb2/3O3 by combining the external parameter high pressure with x-ray diffuse scattering.
Dkhil, B.   +4 more
core   +1 more source

Enhancing Low‐Temperature Performance of Sodium‐Ion Batteries via Anion‐Solvent Interactions

open access: yesAdvanced Functional Materials, EarlyView.
DOL is introduced into electrolytes as a co‐solvent, increasing slat solubility, ion conductivity, and the de‐solvent process, and forming an anion‐rich solvent shell due to its high interaction with anion. With the above virtues, the batteries using this electrolyte exhibit excellent cycling stability at low temperatures. Abstract Sodium‐ion batteries
Cheng Zheng   +7 more
wiley   +1 more source

Designing silver niobate-based relaxor antiferroelectrics for ultrahigh energy storage performance

open access: yesJournal of Advanced Ceramics
AgNbO3 (AN) and modified AgNbO3 have been extensively investigated as promising lead-free antiferroelectric (AFE) energy storage materials. Previous studies have focused mainly on the use of an ion dopant at the A/B site to obtain a stabilized AFE phase;
Zhengdong Hu   +8 more
doaj   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

open access: yesAdvanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone   +11 more
wiley   +1 more source

High-temperature electromechanical actuation of relaxor ferroelectric polymers blended with normal ferroelectric polymer

open access: yesGiant
Soft actuators that can operate at high temperatures are of great interest in emerging research fields such as microfluidics, soft robotics, automotive, aircraft, and bioelectronics.
Quang Van Duong   +9 more
doaj   +1 more source

Counterion Dependent Side‐Chain Relaxation Stiffens a Chemically Doped Thienothiophene Copolymer

open access: yesAdvanced Functional Materials, EarlyView.
Oxidation of a thienothiophene copolymer, p(g3TT‐T2), via different doping strategies and dopant molecules resulted in materials with similar oxidation levels and a high electrical conductivity of ≈100 S cm−1. However, mechanical properties varied significantly, with sub‐glass transition temperatures and elastic moduli spanning from –44°C to –3°C and ...
Mariavittoria Craighero   +12 more
wiley   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

open access: yesAdvanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa   +19 more
wiley   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

Self‐Sintering Ionogel Binder for Flexible, Recyclable, and Healable Printed Giant Magnetoresistive Sensors

open access: yesAdvanced Functional Materials, EarlyView.
ABSTRACT Electronic waste has emerged as a major environmental challenge, driven by the massive consumption and a limited lifetime of modern electronic devices, stimulating the development of sustainable electronics. Here, an all‐biomaterial gelatin‐choline‐citric acid ([Ch][CA]) ionogel is developed as an active binder to realize self‐sintered ...
Lin Guo   +10 more
wiley   +1 more source

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