Results 91 to 100 of about 1,561,898 (299)

Discovery of Energy‐Localized Trap States via Opto‐Electrical Spectroscopy in UWBG Perovskite La:SrSnO3 FETs

Advanced Functional Materials, EarlyView.
Combined UV–vis transmittance and wavelength‐dependent photo‐assisted DC I–V analyses reveal defect‐induced optical instability and a high density of deep donor‐like subgap traps in La‐doped SrSnO3. The resulting MOSFET achieves one of the highest on/off ratios reported for ABO3 perovskite devices, demonstrating the promise of stannate perovskites as ...
Sojin Jung, Junghyun Koo, Hongseung Lee, Donghwan Kim, Dongho Won, Weideng Sun, Jaewook Yoo, Minah Park, Seohyeon Park, Seongbin Lim, Joonsung Lee, Sungjune Park, Sangmoon Yoon, Tae Wan Kim, Bharat Jalan, Gang Qiu, Kiyoung Lee, Hagyoul Bae   +17 more
wiley   +1 more source

Emerging Post‐CMOS Hardware Neurons for Brain‐Inspired Computing: Devices, Circuits, and System Integration

Advanced Functional Materials, EarlyView.
The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan, Hocheon Yoo, Benoît H. Lessard, Ioannis Kymissis, Chang‐Hyun Kim   +4 more
wiley   +1 more source

Ballistic superconductivity in semiconductor nanowires [PDF]

, 2017
Semiconductor nanowires have opened new research avenues in quantum transport owing to their confined geometry and electrostatic tunability. They have offered an exceptional testbed for superconductivity, leading to the realization of hybrid systems ...
Önder Gül, Kenji Watanabe, Maja C. Cassidy, Plissard, S.R. (author), van Veen, Jasper, Cassidy, M.C. (author), van Veen, J. (author), Wimmer, M., Zhang, H. (author), Jasper van Veen, Zhang, H., Marina Quintero-Pérez, Kouwenhoven, Leo P, Leo P. Kouwenhoven, Taniguchi, Takashi (author), de Vries, F.K., Erik P.A.M. Bakkers, Vries, Folkert K de, Michał P. Nowak, Bommer, J.D.S. (author), Bommer, J.D.S., Sébastien R Plissard, Zhang, Hao, Nowak, M.P., van Woerkom, D.J. (author), Koelling, Sebastian, Vincent Mourik, van Veen, J., Takashi Taniguchi, Taniguchi, T., Koelling, S., Moor, M.W.A. de, Mourik, Vincent (author), Kun Zuo, van Woerkom, D.J., Bommer, Jouri D.S., Vries, F.K. de, Conesa-Boj, S., Sebastian Koelling, Quintero Pérez, M., Conesa Boj, S Sonia, Conesa Boj, S., Michiel W. A. de Moor, Goswami, Srijit, Srijit Goswami, Mourik, Vincent, Michael Wimmer, Gül, Ö., Nowak, Michał P, Gül, Önder Tolga, Conesa Boj, S. (author), Wimmer, Michael, Cassidy, Maja C., Car, Diana, Kouwenhoven, Leo P., Zuo, Kun, Koelling, Sebastian (author), Gül, Önder (author), Plissard, SR Sebastien, Bakkers, Erik P.A.M., Car, D Diana, Jouri D. S. Bommer, Folkert K. de Vries, Hao Zhang, Cassidy, M.C., Bakkers, Erik P.A.M.; id_orcid, Bommer, Jouri DS, Gül, Önder, Kölling, S Sebastian, Mourik, V., Nowak, M.P. (author), Wimmer, M.T. (author), Plissard, S.R., Van Woerkom, David J, de Moor, M.W.A. (author), van Woerkom, David J., Kouwenhoven, Leo P. (author), Car, Diana (author), de Vries, F.K. (author), de Vries, Folkert K., Car, D., Quintero-Pérez, Marina, Watanabe, Kenji, Cassidy, M C, Watanabe, Kenji (author), Taniguchi, Takashi, Diana Car, Plissard, Sébastien R., Goswami, S. (author), Goswami, S., Kouwenhoven, L.P., de Moor, M.W.A., Moor, MWA de, Wimmer, M, Bakkers, E.P.A.M., Quintero Perez, M. (author), Watanabe, K., Bakkers, E.P.A.M. (author), Veen, Jasper van, Zuo, K., Wimmer, M.T., Nowak, Michał P., David J. van Woerkom, Bakkers, EPAM Erik, Veen, J. van, Zuo, K. (author), de Moor, Michiel W.A., Sonia Conesa-Boj, Woerkom, D.J. van, Quintero-Pérez, M   +109 more
core   +3 more sources

Multi‐Level Saturation Current Encoding in Two‐Dimensional Ferroelectric Source‐Gated Transistors

Advanced Functional Materials, EarlyView.
A 2D ferroelectric source‐gated transistor (SGT) operates with a non‐volatile, multi‐level saturation current controlled by ferroelectric polarization. Operando electrostatic and photocurrent imaging link the current limitation to source‐side depletion, identifying saturation current as a programmable, read‐bias‐tolerant device parameter toward low ...
Joon‐Seok Kim, Ting‐Ching Chu, Zhehao Zhu, Lincoln J. Lauhon   +3 more
wiley   +1 more source

Research methods of reliability indicators of rectifier diode in tablet execution

EPJ Web of Conferences, 2015
A new forecast approach for the reliability of power semiconductor devices in cyclic operation on the basis of numerical analysis of nonuniform temperature fields is offered.
Rinat Kurmangaliev, Evgeny Kravchenko
doaj   +1 more source

Unified Phase‐Field Framework for Antiferroelectric, Ferroelectric and Dielectric Phases: Application to HZO Thin Films

Advanced Functional Materials, EarlyView.
HfxZr1−xO2${\rm Hf}_x{\rm Zr}_{1-x}{\rm O}_2$ offers CMOS‐compatible nanoscale ferroelectricity yet suffers from a high Ec${\rm E}_c$ demanding large operating voltages. A unified phase‐field framework spanning AFE/FE/DE phases shows how FE grains soften neighboring AFE grains over λ$\lambda$ ≈$\approx$ 22–37 nm.
P. Pankaj, Sandeep Sugathan, Jiyoung Kim, Si Joon Kim, Pil‐Ryung Cha   +4 more
wiley   +1 more source

Increase resource power electronics module on the physics of failure method

MATEC Web of Conferences, 2014
A new approach to improving resource devices for power electronics. The numerical analysis of non-uniform temperature field of power semiconductor devices. A comparison of the intensities of the failure of a power unit with the real thermal regime of the
Kravchenko Evgeny V., Kuznetsov Geniy V.
doaj   +1 more source

Oxygen‐Vacancy‐Regulated Crystallization and Ferroelectric Phase Stabilization in Hf0.5Zr0.5O2 Thin Films

Advanced Functional Materials, EarlyView.
Temperature‐resolved in situ grazing‐incidence wide‐angle X‐ray scattering reveals that oxygen vacancies actively regulate crystallization in Hf0.5Zr0.5O2 thin films. By decoupling macroscopic strain from intrinsic phase evolution, a vacancy‐lean environment significantly lowers the activation energy barrier for crystallization.
Hyun Woo Jeong, Jaewook Lee, Junseong Seo, Hyojun Choi, Dong Hee Han, Seungjae Heo, Tae‐Yeol Jeon, Yunseok Kim, Younghwan Lee, Min Hyuk Park   +9 more
wiley   +1 more source

Reservoir‐Driven Neuromorphic Computing Based on Composite Rare‐Earth/Transition Metal Oxide Memristor

Advanced Functional Materials, EarlyView.
A defect‐engineered Ag/Gd2O3:Nb2O5/Pt rare earth composite oxide memristor enables stable multilevel reservoir states through pulse driven conductance modulation. Experimentally measured device responses are incorporated into a device aware reservoir computing framework for CIFAR‐100 image classification, highlighting the potential of rare earth ...
Hammad Ghazanfar, Haider Abbas, Muhammad Rabeel, Honggyun Kim, Ghulam Dastgeer, Muhammad Nasim, Furqan Zahoor, Yawar Abbas, Waqas Ahmad, Deok‐kee Kim   +9 more
wiley   +1 more source

Research on Power Semiconductor Converter Technology for Rail Transit Applications

机车电传动, 2020
The core of the development of high-power converter technology lies in power semiconductor technology. The iterative optimization of traditional silicon-based power semiconductor devices and the gradually maturity of new wide-band gap material ...
Yu QI, Zechun DOU, Rongjun DING
doaj