Results 81 to 90 of about 121,599 (302)

2D Magnetic and Topological Quantum Materials and Devices for Ultralow Power Spintronics

Advanced Functional Materials, EarlyView.
2D magnets and topological quantum materials enable ultralow‐power spintronics by combining robust magnetic order with symmetry‐protected, Berry‐curvature‐driven transport. Fundamentals of 2D anisotropy and spin‐orbit‐coupling induced band inversion are linked to scalable growth and vdW stacking.
Brahmdutta Dixit, Yifei Yang, Shawn Li, Yu‐Chia Chen, Qi Jia, Jian‐Ping Wang   +5 more
wiley   +1 more source

Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide Gate

Micromachines
This work presents highly responsive gate-controlled p-GaN/AlGaN/GaN ultraviolet photodetectors (UVPDs) on Si substrates with a high-transmittance ITO gate.
Zhanfei Han, Xiangdong Li, Hongyue Wang, Yuebo Liu, Weitao Yang, Zesheng Lv, Meng Wang, Shuzhen You, Jincheng Zhang, Yue Hao   +9 more
doaj   +1 more source

From Wafers to Electrodes: Transferring Automatic Optical Inspection (AOI) for Multiscale Characterization of Smart Battery Manufacturing

Advanced Functional Materials, EarlyView.
Automat optical inspection (AOI) techniques in semiconductor fabrication can be leveraged in battery manufacturing, enabling scalable detection and analysis of electrode‐ and cell‐level imperfections through AI‐driven analytics and a digital‐twin framework.
Jianyu Li, Ertao Hu, Wei Wei, Feifei Shi
wiley   +1 more source

Impact of Total Ionizing Dose on Radio Frequency Performance of 22 nm Fully Depleted Silicon-On-Insulator nMOSFETs

Micromachines
In this paper, the degradation mechanism of the RF performance of 22 nm fully depleted (FD) silicon-on-insulator nMOSFETs at different total ionizing dose levels has been investigated.
Zhanpeng Yan, Hongxia Liu, Menghao Huang, Shulong Wang, Shupeng Chen, Xilong Zhou, Junjie Huang, Chang Liu   +7 more
doaj   +1 more source

Anomalous Pressure‐Temperature Ultrahigh Sensitivities in Atomically Engineered Carbonitride MXenes for Multifunctional Wearable Human–Machine Interfaces: Joint Computational–Experimental Elucidations

Advanced Functional Materials, EarlyView.
Atomically engineered layered 2D Ti3CNTz carbonitride MXene exhibits ultrahigh heat and pressure sensitivity, enabling dual‐mode sensors with 300%–400% performance enhancement and durability for real‐time health‐monitoring interface devices. Precise nitrogen incorporation (e.g., Ti3C1.8N0.2Tz) boosts conductivity, enhancing temperature response, while ...
Debananda Mohapatra, Ju‐Hyoung Han, Hyun Jin Kang, Jeong Eun Byun, Seonghun Lee, Sanghyuk Lee, Yeseul Son, Jaeeun Park, Tae Joo Shin, Youngho Kang, Jung Woo Lee, Soon‐Yong Kwon, Soo‐Hyun Kim   +12 more
wiley   +1 more source

Beyond the Edge: Charge‐Transfer Excitons in Organic Donor‐Acceptor Cocrystals

Advanced Functional Materials, EarlyView.
Complex excitonic landscapes in acene–perfluoroacene cocrystals are unveiled by polarization‐resolved optical spectroscopy and many‐body theory. This systematic study of a prototypical model system for weakly interacting donor–acceptor compounds challenges common views of charge‐transfer excitons, providing a refined conceptual framework for ...
Sebastian Anhäuser, Ana M. Valencia, Sergei I. Ivlev, Marc Zeplichal, Andreas Terfort, Caterina Cocchi, Gregor Witte   +6 more
wiley   +1 more source

An improved method for obtaining a normalized junction temperature for semiconductors: A concept [PDF]

, 1973
Failure rate for given semiconductor device is simply determined by reading value of normalized junction temperature from printout for any given combination of ambient temperature, stress ratio, and maximum rated junction temperature, and obtaining ...
Trivedi, S. N.
core   +1 more source

Vertical-external-cavity surface-emitting lasers and quantum dot lasers

, 2012
The use of cavity to manipulate photon emission of quantum dots (QDs) has been opening unprecedented opportunities for realizing quantum functional nanophotonic devices and also quantum information devices.
A. A. Lagatsy, A. Garnache, A. J. Kemp, A. Lenz, A. Mutig, A. R. Albrecht, A. Rantamäki, A. Schliwa, A. Schliwa, A. Strittmatter, A. Strittmatter, B. Lita, B. S. Song, C. B. Murray, C. Ribbat, D. Bimberg, D. Guimard, D. Leonard, D. Lorenser, D. Ouyang, E. J. Saarinen, E. Kapon, F. Heinrichsdorff, F. Heinrichsdorff, G. Bester, G. C. Shan, G. C. Shan, G. Shan, H. Jiang, H. Kumano, H. Li, I. Kaminow, I. P. Marko, I. R. Sellers, J. Chilla, J. E. Hastie, J. E. Hastie, J. I. Cirac, J. Konttinen, J. M. Gerard, J. P. Reithmaier, J. Rautiainen, K. Hennessy, K. J. Vahala, L. A. Coldren, L. Fan, L. Fan, L. Fan, M. Asada, M. Fallahi, M. Kuznetsov, M. Nomura, M. Pelton, M. Pelton, M. V. Maximov, M. Yamaguchi, N. Kirstaedter, N. Kirstaedter, O. B. Shchekin, O. G. Okhotnikov, P. J. Yao, P. Lodahl, P. Michler, R. Diehl, R. Haring, R. L. Sellin, R. L. Sellin, S. A. Blokhin, S. Fathpour, S. Giet, S. Giet, S. Hilbich, S. Lutgen, S. S. Mikhrin, S. Strauf, S. Strauf, T. D. Germann, T. D. Germann, T. D. Germann, T. D. Germann, T. Vallaitis, T. Vallaitis, T. Yoshie, U. Keller, V. A. Fonoberov, W. J. Alford, X. H. Zhao, Y. He, Z. Xu   +88 more
core   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Improvement of radiation hardness for a novel InP-based HEMT with graded In1-xGaxAs channel layer and double Si-doped structure

Results in Engineering
To enhance the radiation resistance of the InP-based HEMT, a novel structure incorporating a graded In1-xGaxAs channel layer and double Si-doped structure (DPLC-HEMT) is proposed.
Shuxiang Sun, Xintong Xie, Hongying Mei, Xiaorong Luo, J. Ajayan   +4 more
doaj   +1 more source