Results 81 to 90 of about 1,561,898 (299)

Semiconductor Laser Engineering, Reliability and Diagnostics A Practical Approach to High Power and Single Mode Devices

, 2013
Reliability and Diagnostics reflects the extensive expertise of the author in the diode laser field both as a top scientific researcher as well as a key developer of high-power highly reliable devices. With invaluable practical advice, this new reference
Epperlein, Peter W.
core  

Atom Probe Tomography as an Emerging Tool for Understanding Defect‑Driven Mechanisms in HfO2‑Based Ferroelectrics

Advanced Functional Materials, EarlyView.
This Perspective highlights atom probe tomography as a powerful tool for understanding the atomic‐scale defect chemistry in HfO2‐based ferroelectrics. 3D mapping of dopants, point defects, and interface chemistry can provide new insight into defect‐driven mechanisms underpinning the ferroelectricity in the system and guide the design of more reliable ...
Kasper Hunnestad, Catherine Dubourdieu, Alexei Gruverman, Dennis Meier   +3 more
wiley   +1 more source

Efficient Inverted ITO-Free Organic Solar Cells Based on Transparent Silver Electrode with Aqueous Solution-Processed ZnO Interlayer

International Journal of Photoenergy, 2017
Efficient inverted organic solar cells (OSCs) with the MoO3 (2 nm)/Ag (12 nm) transparent cathode and an aqueous solution ZnO electron extraction layer processed at low temperature are investigated in this work.
Zhizhe Wang, Dazheng Chen, Chunfu Zhang, Zhenhua Lin, Yan Liu, Genquan Han, Jingjing Chang, Jincheng Zhang, Lixin Guo, Yue Hao   +9 more
doaj   +1 more source

Noise‐Limited Bit Precision in Ferroelectric Synaptic Transistors for High‐Resolution Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park, Yeonseop Shin, Changhyeon Han, Sangwoo Kim, Eunchan Park, Youngchan Cho, Jaehong Min, Hyunjun Ahn, Jaekyoung Park, Cheol‐Woong Yang, Jangsaeng Kim, Daewoong Kwon, Wonjun Shin   +12 more
wiley   +1 more source

Dispersion monitoring for high-speed WDM networks via two-photon absorption in a semiconductor microcavity [PDF]

, 2006
Due to the continued demand for bandwidth, network operators have to increase the data rates at which individual wavelengths operate at. As these data rates will exceed 100 Gbit/s in the next 5-10 years, it will be crucial to be able to monitor and ...
Guo, Wei Hua, J. F. Donegan, W. H. Guo, Bradley, L., Folliot, Hervé, Marciniak, Marian, Maguire, P.J., P. J. Maguire, Guo, W.H., A. L. Bradley, Folliot, H., Lynch, M., Barry, Liam P., Bondarczuk, Krzysztof, Lynch, Michael, H. Folliot, Bradley, Ann Louise, O'Dowd, John, Donegan, John Francis, Donegan, J.F., K. Bondarczuk, J. O'Dowd, Bondarczuk, K., L. P. Barry, Maguire, Paul J., M. Lynch, Barry, Liam, P.   +26 more
core   +1 more source

Two Coexisting Pathways to Volatility in Valence‐Change Memory Devices

Advanced Functional Materials, EarlyView.
Volatile VCM‐type memristive devices exhibit current relaxation after resistive switching, but their microscopic origin remains debated. Using pulsed measurements and a new Tunnel‐DLTS approach on Pt/SrTiO3/Nb:SrTiO3 devices, we show that post‐SET volatility is predominantly ionic, while electronic contributions—arising from quasi‐Fermi‐level ...
Johannes Hellwig, Clemens Wittberg, Dimitrios Spithouris, Regina Dittmann   +3 more
wiley   +1 more source

Binary‐to‐Ternary Reconfigurable Transistors Using Plasma‐Assisted MoS2

Advanced Functional Materials, EarlyView.
A binary‐to‐ternary reconfigurable transistor is demonstrated using a dual‐gated molybdenum disulfide homojunction with localized O2 plasma treatment. The device exhibits on/intermediate and intermediate/off current ratios of 102 and 104, respectively, and the intermediate state is electrically tunable in the ternary mode.
Yeonghyeon Ko, Jungi Song, Minsu Kim, Yongwook Seok, Seongje Moon, Kenji Watanabe, Takashi Taniguchi, Kayoung Lee   +7 more
wiley   +1 more source

Semiclassical transport in semiconductor superlattices with boundaries [PDF]

, 2004
In this thesis the electronic transport properties of semiconductor superlattices with boundaries are studied using the Boltzmann equation in relaxation time approximation.
Rieder, Bernhard
core   +1 more source

Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing

Advanced Functional Materials, EarlyView.
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin, Eunjoo Yoo, Ki‐Hoon Son, Hyun‐Sik Kim, Dae‐Hee Han, Jeong Hyeon Son, Seung Hwan Lee, Hong‐Sub Lee   +7 more
wiley   +1 more source

Boosting Conversion Efficiency in Zn3P2/InP Solar Cells Via Nanoscale Junction Engineering

Advanced Functional Materials, EarlyView.
This study demonstrates the efficacy of selective area epitaxy (SAE) in enhancing the conversion efficiency of a Zn3P2${\rm Zn}_3{\rm P}_2$/InP heterojunction solar cell. The impact of the SAE pattern dimensions on the performance parameters is investigated. Small size opening limits Jsc because of current crowding whereas large size opening limits Voc
Raphael Lemerle, Valerio Piazza, Andrea Filippo, Melanie Micali, Luna Warzawa, Thomas Hagger, Kamil Wodzislawski, Julien Hurni, Valentin Biselli, Ioannis Kalogerakis, Konstantinos Rogdakis, George Viskadouros, Emmanuel Kymakis, Esther Alarcon‐Llado, Anna Fontcuberta i Morral   +14 more
wiley   +1 more source