Results 61 to 70 of about 121,599 (302)

In-situ-SiN/AlN/Al_0.05Ga_0.95N High Electron-Mobility Transistors on Si-Substrate Using Al₂O₃/SiO₂ Passivation

IEEE Journal of the Electron Devices Society, 2021
In this study, in-situ MOCVD-grown SiN/AlN/Al0.05Ga0.95N HEMTs were fabricated using ALD-Al2O3/PECVD-SiO2 passivation. A high on/off current ratio of 109 and a low subthreshold swing of 64 mV/dec are achieved. The interface traps in the SiN/AlN/Al0.05Ga0.
Weihang Zhang, Liyu Fu, Xi Liu, Jincheng Zhang, Shenglei Zhao, Zhizhe Wang, Yue Hao   +6 more
doaj   +1 more source

Jupiter radiation test levels and their expected impact on an encounter mission [PDF]

, 1972
The upper limit, of electron and proton fluences for a thermoelectric outer planet spacecraft mission in a near-Jupiter environment, for use as radiation design restraints, were extracted from a model of the Jovian trapped radiation belts. Considerations
Barengoltz, J. B.
core   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Multilevel metallization method for fabricating a metal oxide semiconductor device [PDF]

, 1978
An improved method is described of constructing a metal oxide semiconductor device having multiple layers of metal deposited by dc magnetron sputtering at low dc voltages and low substrate temperatures. The method provides multilevel interconnections and
Bouldin, D. L., Feltner, W. R., Hollis, B. R., Jr., Routh, D. E.   +3 more
core   +1 more source

Printed Integrated Logic Circuits Based on Chitosan‐Gated Organic Transistors for Future Edible Systems

Advanced Functional Materials, EarlyView.
Edible electronics needs integrated logic circuits for computation and control. This work presents a potentially edible printed chitosan‐gated transistor with a design optimized for integration in circuits. Its implementation in integrated logic gates and circuits operating at low voltage (0.7 V) is demonstrated, as well as the compatibility with an ...
Giulia Coco, Valerio Francesco Annese, Valerio Galli, Ilaria Penna, Debora Russo, Marina Veronesi, Rita Scarpelli, Stefania Sabella, Mario Caironi   +8 more
wiley   +1 more source

Unbalanced currents effect on the thermal characteristic and reliability of parallel connected power switches

Case Studies in Thermal Engineering, 2021
In many industrial applications, parallel connection of power semiconductor switches is widely used to achieve higher power levels and fault-tolerant operation.
Tohid Rahimi, Lei Ding, Armin Abadifard, Pedram Ghavidel, Masoud Farhadi, Rasoul Faraji   +5 more
doaj   +1 more source

Statistical analysis of time-resolved emission from ensembles of semiconductor quantum dots: Interpretation of exponential decay models [PDF]

, 2006
We present a statistical analysis of time-resolved spontaneous emission decay curves from ensembles of emitters, such as semiconductor quantum dots, with the aim of interpreting ubiquitous non-single-exponential decay. Contrary to what is widely assumed,
Driel, A.F. van, Lodahl, P., Nikolaev, I.S., Vanmaekelbergh, D., Vergeer, P., Vos, W.L.   +5 more
core   +4 more sources

Photoswitching Conduction in Framework Materials

Advanced Functional Materials, EarlyView.
This mini‐review summarizes recent advances in state‐of‐the‐art proton and electron conduction in framework materials that can be remotely and reversibly switched on and off by light. It discusses the various photoswitching conduction mechanisms and the strategies employed to enhance photoswitched conductivity.
Helmy Pacheco Hernandez, Stefan Hecht, Wolfgang Wenzel, Lars Heinke, Mariana Kozlowska   +4 more
wiley   +1 more source

MOFs and COFs in Electronics: Bridging the Gap between Intrinsic Properties and Measured Performance

Advanced Functional Materials, EarlyView.
Metal‐organic frameworks (MOFs) and covalent organic frameworks (COFs) hold promise for advanced electronics. However, discrepancies in reported electrical conductivities highlight the importance of measurement methodologies. This review explores intrinsic charge transport mechanisms and extrinsic factors influencing performance, and critically ...
Jonas F. Pöhls, R. Thomas Weitz
wiley   +1 more source

Effects of 450 MeV Kr Swift Heavy Ion Irradiation on GaN-Based Terahertz Schottky Barrier Diodes

Micromachines
GaN-based terahertz (THz) Schottky barrier diodes (SBDs) are critical components for achieving high-power performance in THz frequency multipliers. However, the space applications of GaN-based THz SBDs are significantly constrained due to insufficient ...
Yan Ren, Yongtao Yu, Shengze Zhou, Chao Pang, Yinle Li, Zhifeng Lei, Hong Zhang, Zhihong Feng, Xubo Song, Honghui Liu, Yongli Lou, Yiqiang Ni   +11 more
doaj   +1 more source