Results 51 to 60 of about 121,599 (302)

High-Performance AlGaN Double Channel HEMTs with Improved Drain Current Density and High Breakdown Voltage

Nanoscale Research Letters, 2020
In this work, AlGaN double channel heterostructure is proposed and grown by metal organic chemical vapor deposition (MOCVD), and high-performance AlGaN double channel high electron mobility transistors (HEMTs) are fabricated and investigated.
Yachao Zhang, Yifan Li, Jia Wang, Yiming Shen, Lin Du, Yao Li, Zhizhe Wang, Shengrui Xu, Jincheng Zhang, Yue Hao   +9 more
doaj   +1 more source

Gate protective device for insulated gate field-effect transistors [PDF]

, 1972
Device, which protects insulated gate field-effect transistors, improves reliability through utilization of layers of conductive material on top of each alternating semiconductor material region.
Sunshine, R. A.
core   +1 more source

Resistance Rapid Heating of Aluminum Coatings in an Extreme High Vacuum–Adequate Atmosphere for Hot Stamping

Advanced Engineering Materials, EarlyView.
The subject of this work is the development of a corrosion‐protective coating on steel sheets for form hardening. Rapid heating in an extreme high vacuum (XHV)‐adequate atmosphere is a useful method to prevent oxidation during alloying of 22MnB5 and aluminum to obtain a metallurgical bonding.
Lorenz Albracht, Alexander Schnettger, Ulrich Holländer, Sven Hübner, Bernd‐Arno Behrens, Hans Jürgen Maier   +5 more
wiley   +1 more source

Cryogenic Hyperdimensional In-Memory Computing Using Ferroelectric TCAM

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Cryogenic operations of electronics present a significant step forward to achieve huge demand of in-memory computing (IMC) for high-performance computing, quantum computing, and military applications.
Shivendra Singh Parihar, Shubham Kumar, Swetaki Chatterjee, Girish Pahwa, Yogesh Singh Chauhan, Hussam Amrouch   +5 more
doaj   +1 more source

Development of reliability prediction technique for semiconductor diodes [PDF]

, 1967
New fundamental technique of reliability prediction for semiconductor diodes based on realistic mathematical models can be applied to component failure rate prediction including mechanical degradation, electrical degradation, environmental stress factors,
Ryerson, C. M.
core   +1 more source

Cathodic Cage Plasma Deposition of Nanostructured Cu–Fe–Se Coatings on Poly(methyl Methacrylate)

Advanced Engineering Materials, EarlyView.
Nanostructured Cu–Fe–Se coatings are deposited on PMMA by a modified cathodic cage plasma process, enabling low‐temperature deposition on polymer substrates. A transition from discontinuous to compact morphology is observed with temperature, with optimal properties at 200°C, where improved CuFeSe2‐type bonding, lowest sheet resistance, and favorable ...
V. S. S. Sobrinho, M. Naeem, T. H. C. Costa, M. S. Libório, J. C. A. Queiroz, C. B. B. Luna, R. R. M. Sousa, P. S. Vieira, E. M. Araújo   +8 more
wiley   +1 more source

Improved DC and RF Characteristics of GaN HEMT Using a Back-Barrier and Locally Doped Barrier Layer

Micromachines
To enhance the DC and RF performance of AlGaN/GaN HEMTs, a novel device structure was proposed and investigated through simulation. The key innovation of this new structure lies in the incorporation of an Al0.7In0.15Ga0.15N back-barrier layer and an N ...
Shuxiang Sun, Lulu Liu, Gangchuan Qu, Xintong Xie, J. Ajayan   +4 more
doaj   +1 more source

The magnetic, optical and electronic properties of Mn–X(X = O, Se, Te, Po) co-doped MoS2 monolayers via first principle calculation

Materials Research Express, 2020
The magnetic and optical properties studies in monolayer transition-metal dichalcogenides have attracted attention because of the manufacture spintronic, electronic and photonic devices.
Qi-Zhi Lang, Yan-Bin Huang, Jie-Min Wei, Yi Wang, Xiang Guo, Zi-Jiang Luo, Zhao Ding   +6 more
doaj   +1 more source

Design and development of a fast scan infrared detection and measurement instrument [PDF]

, 1971
Infrared microscope instrument measures and plots the infrared profile of semiconductor chips, transistors and integrated circuits. Infrared analyses yields information on electrical and physical properties, enabling manufacturing improvements in ...
Dostoomian, A. S., Hamiter, L., Nowakowski, M., Vanzetti, R.   +3 more
core   +1 more source

Advancing Electronic Application of Coordination Solids: Enhancing Electron Transport and Device Integration via Surface‐Mounted MOFs (SURMOFs)

Advanced Functional Materials, EarlyView.
The layer‐by‐layer (LbL) assembly of coordination solids, enabled by the surface‐mounted metal‐organic framework (SURMOF) platform, is on the cusp of generating the organic counterpart of the epitaxy of inorganics. The programmable and sequential SURMOF protocol, optimized by machine learning (ML), is suited for accessing high‐quality thin films of ...
Zhengtao Xu, Christof Wöll, Stefan Bräse   +2 more
wiley   +1 more source