Results 51 to 60 of about 1,561,898 (299)

In-situ-SiN/AlN/Al_0.05Ga_0.95N High Electron-Mobility Transistors on Si-Substrate Using Al₂O₃/SiO₂ Passivation

IEEE Journal of the Electron Devices Society, 2021
In this study, in-situ MOCVD-grown SiN/AlN/Al0.05Ga0.95N HEMTs were fabricated using ALD-Al2O3/PECVD-SiO2 passivation. A high on/off current ratio of 109 and a low subthreshold swing of 64 mV/dec are achieved. The interface traps in the SiN/AlN/Al0.05Ga0.
Weihang Zhang, Liyu Fu, Xi Liu, Jincheng Zhang, Shenglei Zhao, Zhizhe Wang, Yue Hao   +6 more
doaj   +1 more source

Semiconductor manufacturing dashboard [PDF]

, 2013
textThe semiconductor manufacturing process is a complex process that can consist of hundreds if not thousands of steps. During this process an enormous amount of data is generated and collected by several different systems.
Collier, Scott Allen
core  

Wearable Smart Patches on Sustainable Chitosan With Reversible Microbial Growth‐Inhibitory Properties

Advanced Functional Materials, EarlyView.
ABSTRACT Chitosan, a polysaccharide upcycled from biowaste, has long promised sustainable, biocompatible, and antimicrobial films and devices, an appeal reinforced by its recent regulatory recognition, with several chitosan‐based antibacterial dressings gaining clearance through the Food and Drug Administration's 510(k) pathway.
Jacopo Nicoletti, Kubra Kocak, Andrea Michel, Enrico Cavarzerani, Ali Raza, Petr Rohzin, Nouha Loudhaief, Saimir Frroku, Nicolò Baldovin, Hazrat Bilal, Alvise Perosa, Maurizio Selva, Flavio Rizzolio, Luca Sbuelz, Sabrina Tamburini, Domenico De Fazio, Giovanni Antonio Salvatore   +16 more
wiley   +1 more source

Unbalanced currents effect on the thermal characteristic and reliability of parallel connected power switches

Case Studies in Thermal Engineering, 2021
In many industrial applications, parallel connection of power semiconductor switches is widely used to achieve higher power levels and fault-tolerant operation.
Tohid Rahimi, Lei Ding, Armin Abadifard, Pedram Ghavidel, Masoud Farhadi, Rasoul Faraji   +5 more
doaj   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Effects of 450 MeV Kr Swift Heavy Ion Irradiation on GaN-Based Terahertz Schottky Barrier Diodes

Micromachines
GaN-based terahertz (THz) Schottky barrier diodes (SBDs) are critical components for achieving high-power performance in THz frequency multipliers. However, the space applications of GaN-based THz SBDs are significantly constrained due to insufficient ...
Yan Ren, Yongtao Yu, Shengze Zhou, Chao Pang, Yinle Li, Zhifeng Lei, Hong Zhang, Zhihong Feng, Xubo Song, Honghui Liu, Yongli Lou, Yiqiang Ni   +11 more
doaj   +1 more source

Effect of wearout processes on the critical timing parameters and reliability of CMOS bistable circuits [PDF]

, 1997
The objective of the research presented in this thesis was to investigate the effects of wearout processes on the performance and reliability of CMOS bistable circuits.
Das, A.G. Man Mohan
core  

Fully Additive Vertical Organic Electrochemical Transistors on Renewable and Compostable Substrates Enable Ultrasensitive Bioelectronics

Advanced Functional Materials, EarlyView.
Fully additive vertical organic electrochemical transistors (vOECTs) with channel‐length of 226 nm on a 50 µm compostable substrate achieve >106 current modulation and ∼36 mS transconductance. Ion‐selective integration enables 1.1 mA dec−1 sensitivity and 36 µm detection limit, highlighting a scalable platform for sustainable electronics and ...
Giulia Frusconi, Samuele Lavelli, Zsolt M. Kovács‐Vajna, Fabrizio Torricelli   +3 more
wiley   +1 more source

Passively mode-locked diode-pumped surface-emitting semiconductor laser

, 2000
A surface-emitting semiconductor laser has been passively mode locked in an external cavity incorporating a semiconductor saturable absorber mirror. The gain medium consists of a stack of 12 InGaAs-GaAs strained quantum wells, grown above a Bragg mirror ...
Tropper, A.C., Morier-Genoud, F., F. Morier-Genoud, J. S. Roberts, Roberts, J.S., Garnache, A., A. C. Tropper, Keller, U., Paschotta, R., A. Garnache, Oesterle, U., S. Dhanjal, U. Oesterle, Dhanjal, S., Häring, R., R. Häring, R. Paschotta, S. Hoogland, U. Keller, Hoogland, S.   +19 more
core   +1 more source

All-optical sampling utilising two-photon absorption in semiconductor microcavity [PDF]

, 2005
A highly-efficient optical sampling system based on Two-Photon Absorption in a semiconductor micro-cavity is presented.
Krug, T., Maguire, Paul, J., Donegan, John Francis, Folliot, Hervé, Donegan, J.F., Barry, Liam,, Bradley, A.L., Folliot, H., Lynch, M., Barry, Liam P., Lynch, Michael, Bradley, Ann Louise, Maguire, Paul,, Maguire, Paul J., Barry, Liam, P.   +14 more
core   +2 more sources