Results 41 to 50 of about 1,561,898 (299)

Cryogenic Hyperdimensional In-Memory Computing Using Ferroelectric TCAM

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Cryogenic operations of electronics present a significant step forward to achieve huge demand of in-memory computing (IMC) for high-performance computing, quantum computing, and military applications.
Shivendra Singh Parihar, Shubham Kumar, Swetaki Chatterjee, Girish Pahwa, Yogesh Singh Chauhan, Hussam Amrouch   +5 more
doaj   +1 more source

High-Performance AlGaN Double Channel HEMTs with Improved Drain Current Density and High Breakdown Voltage

Nanoscale Research Letters, 2020
In this work, AlGaN double channel heterostructure is proposed and grown by metal organic chemical vapor deposition (MOCVD), and high-performance AlGaN double channel high electron mobility transistors (HEMTs) are fabricated and investigated.
Yachao Zhang, Yifan Li, Jia Wang, Yiming Shen, Lin Du, Yao Li, Zhizhe Wang, Shengrui Xu, Jincheng Zhang, Yue Hao   +9 more
doaj   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Improved DC and RF Characteristics of GaN HEMT Using a Back-Barrier and Locally Doped Barrier Layer

Micromachines
To enhance the DC and RF performance of AlGaN/GaN HEMTs, a novel device structure was proposed and investigated through simulation. The key innovation of this new structure lies in the incorporation of an Al0.7In0.15Ga0.15N back-barrier layer and an N ...
Shuxiang Sun, Lulu Liu, Gangchuan Qu, Xintong Xie, J. Ajayan   +4 more
doaj   +1 more source

Printed Integrated Logic Circuits Based on Chitosan‐Gated Organic Transistors for Future Edible Systems

Advanced Functional Materials, EarlyView.
Edible electronics needs integrated logic circuits for computation and control. This work presents a potentially edible printed chitosan‐gated transistor with a design optimized for integration in circuits. Its implementation in integrated logic gates and circuits operating at low voltage (0.7 V) is demonstrated, as well as the compatibility with an ...
Giulia Coco, Valerio Francesco Annese, Valerio Galli, Ilaria Penna, Debora Russo, Marina Veronesi, Rita Scarpelli, Stefania Sabella, Mario Caironi   +8 more
wiley   +1 more source

The magnetic, optical and electronic properties of Mn–X(X = O, Se, Te, Po) co-doped MoS2 monolayers via first principle calculation

Materials Research Express, 2020
The magnetic and optical properties studies in monolayer transition-metal dichalcogenides have attracted attention because of the manufacture spintronic, electronic and photonic devices.
Qi-Zhi Lang, Yan-Bin Huang, Jie-Min Wei, Yi Wang, Xiang Guo, Zi-Jiang Luo, Zhao Ding   +6 more
doaj   +1 more source

Numerical simulation and design of semiconductor quantum dot-based lasers and amplifiers [PDF]

, 2013
Numerical simulation and design of semiconductor quantum dot-based lasers and ...
Xu, Tianhong
core   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Resonator Facets and Reliability in Semiconductor Lasers [PDF]

, 2005
The relation between facets and reliability in Fabry-Perot semiconductor lasers is discussed. Surface roconbination centers play important roles in catastrophic optical damage (COD), life problems, electrostatic-discharge-induced degradation.
9562, 9563, 權田, 俊一, Gonda, Shunichi   +3 more
core   +2 more sources