Results 21 to 30 of about 121,599 (302)
Evaluation of Hot Carrier Impact on Lateral-DMOS with LOCOS feature
Algerian Journal of Signals and Systems, 2021 Hot carrier stress is evaluated on a laterally diffused MOSFET (LDMOS) by TCAD simulation. The device under test is obtained from process simulation under a 1µm CMOS flow available at CDTA.
Ali HOUADEF, Boualem DJEZZAR
doaj +1 more source
Photonics, 2022 The degradation process of Vertical-cavity Surface-emitting lasers with high speed and a central wavelength at 850 nm is investigated via constant-current accelerated aging experiments.
Jide Zhang +5 more
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2021 Barrier height ( $\phi _{b}$ ), trap state, bandgap ( $E_{g}$ ), and band alignment information of the metal–ZrO2–metal capacitor have been extracted using internal photoemission (IPE) system.
Tae Jin Yoo +7 more
doaj +1 more source
Effect of Thickness of InP Nucleation Layer on the Two-Step Growth of InP on Si(001)
Crystals, 2022 InP nucleation layers with different thicknesses were grown on Si(001) substrates by gas-source molecular beam epitaxy (GSMBE), and the two-step growth technique was used to overcome the large lattice mismatch (8%) between the InP nucleation layer and Si
Silu Yan +3 more
doaj +1 more source
Novel Step Floating Islands VDMOS with Low Specific on-Resistance by TCAD Simulation
Micromachines, 2022 A novel VDMOS with Step Floating Islands VDMOS (S-FLI VDMOS) is proposed for the first time in this letter, in order to optimize the breakdown voltage (BV) and the specific on-resistance (Ron,sp).
Dongyan Zhao +11 more
doaj +1 more source
Surface free energy and microarray deposition technology [PDF]
, 2007 Microarray techniques use a combinatorial approach to assess complex biochemical interactions. The fundamental goal is simultaneous, large-scale experimentation analogous to the automation achieved in the semiconductor industry.
Aussillous +8 more
core +1 more source
Degradation Characteristics and Reliability Assessment of 1310 nm VCSEL for Microwave Photonic Link
Applied Sciences, 2022 The long-term reliability of the commercially available vertical-cavity surface-emitting laser (VCSEL) at 1310 nm wavelength is investigated. To do so, a high current accelerated life test is used to evaluate the 1310 nm VCSEL reliability.
Wenyuan Liao +7 more
doaj +1 more source
Package Hermeticity Testing with Thermal Transient Measurements [PDF]
, 2008 The rapid incursion of new technologies such as MEMS and smart sensor device manufacturing requires new tailor-made packaging designs. In many applications these devices are exposed to humid environments.
Rencz, M., Vass-Varnai, Andras
core +2 more sources
Reliability analysis and reliable operation of three-level ANPC inverter
Frontiers in Energy Research, 2023 The three-level active neutral-point-clamped (3L-ANPC) inverters have been widely used in medium-voltage high-power electrical drives. The purpose of this paper is to achieve the reliable operation for 3L-ANPC inverters by reliability analysis and ...
Xiaolin Zheng +4 more
doaj +1 more source
Radiation Risks and Mitigation in Electronic Systems [PDF]
, 2016 Electrical and electronic systems can be disturbed by radiation-induced effects. In some cases, radiation-induced effects are of a low probability and can be ignored; however, radiation effects must be considered when designing systems that have a high ...
Todd, B., Uznanski, S.
core +3 more sources