Results 21 to 30 of about 1,561,898 (299)

Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization

Micromachines, 2023
The bias temperature instability (BTI) effect of p-GaN gate high-electron-mobility transistors (HEMTs) is a serious problem for reliability. To uncover the essential cause of this effect, in this paper, we precisely monitored the shifting process of the ...
Xiangdong Li, Meng Wang, Jincheng Zhang, Rui Gao, Hongyue Wang, Weitao Yang, Jiahui Yuan, Shuzhen You, Jingjing Chang, Zhihong Liu, Yue Hao   +10 more
doaj   +1 more source

Reliability of repetitively avalanched wire-bonded low-voltage discrete power trench n-MOSFETs [PDF]

, 2011
This paper, for the first time, investigates the reliability of wire-bonded low-voltage discrete power trench n-MOSFETs that have been subjected to repetitive unclamped inductive switching (RUIS).
Ian Kennedy, Petkos, George, Adrian Koh, Kennedy, Ian, Olayiwola Alatise, George Petkos, Alatise, Olayiwola M., Koh, Adrian   +7 more
core   +1 more source

Empirical bayes estimates of development reliability for one shot devices [PDF]

, 2009
This article describes a method for estimating the reliability of a system under development that is an evolution of previous designs. We present an approach to making effective use of heritage data from similar operational systems to estimate ...
Quigley, J.L., Bedford, T.J., Walls, L.A.   +2 more
core   +3 more sources

Reliability approach for safe designing on a locking system [PDF]

, 2010
The aim of this work is to predict the failure probability of a locking system. This failure probability is assessed using complementary methods: the First-Order Reliability Method (FORM) and Second-Order Reliability Method (SORM) as approximated methods,
ARNOUX, Philippe, DAU, Frédéric, MEALIER, Nicolas, GUILLAUMAT, Laurent   +3 more
core   +1 more source

Transient electrothermal simulation of power semiconductor devices [PDF]

, 2010
In this paper, a new thermal model based on the Fourier series solution of heat conduction equation has been introduced in detail. 1-D and 2-D Fourier series thermal models have been programmed in MATLAB/Simulink.
Bryant, Angus T., Mantooth, HA, Hudgins, Jerry L., Du, Bin, Du, B, Palmer, PR, Mantooth, H. Alan, ,, Palmer, Patrick R., Santi, Enrico, Hudgins, JL, Santi, E, Bryant, AT   +12 more
core   +1 more source

Generic approach for deriving reliability and maintenance requirements through consideration of in-context customer objectives [PDF]

, 2010
Not all implementations of reliability are equally effective at providing customer and user benefit. Random system failure with no prior warning or failure accommodation will have an immediate, usually adverse impact on operation.
Jones, Jeffrey Alun, Warrington, Les
core   +1 more source

Multiobjective scheduling for semiconductor manufacturing plants [PDF]

, 2010
Scheduling of semiconductor wafer manufacturing system is identified as a complex problem, involving multiple and conflicting objectives (minimization of facility average utilization, minimization of waiting time and storage, for instance) to ...
Azzaro-Pantel, Catherine, Baez Senties, Oscar, Pibouleau, Luc, Domenech, Serge   +3 more
core   +1 more source

Optimization Strategy of 4H-SiC Separated Absorption Charge and Multiplication Avalanche Photodiode Structure for High Ultraviolet Detection Efficiency

Nanoscale Research Letters, 2019
In this work, parametric investigations on structural optimization are systematically made for 4H-SiC-based separated absorption charge and multiplication (SACM) avalanche ultraviolet photodiode (UV APD).
Jianquan Kou, KangKai Tian, Chunshuang Chu, Yonghui Zhang, Xingye Zhou, Zhihong Feng, Zi-Hui Zhang   +6 more
doaj   +1 more source

Investigating the Failure Mechanism of p-GaN Gate HEMTs under High Power Stress with a Transparent ITO Gate

Micromachines, 2023
The channel temperature distribution and breakdown points are difficult to monitor for the traditional p-GaN gate HEMTs under high power stress, because the metal gate blocks the light.
Zhanfei Han, Xiangdong Li, Hongyue Wang, Jiahui Yuan, Junbo Wang, Meng Wang, Weitao Yang, Shuzhen You, Jingjing Chang, Jincheng Zhang, Yue Hao   +10 more
doaj   +1 more source

The Impact of Magnetic Field on Defective FDSOI and FinFET Devices

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits
This article explores the efficacy of a unique defect detection mechanism for the FinFET and FDSOI transistors: magnetomodulation of drain current. Using multiphysics technology CAD (TCAD), we model the impact of static and transient magnetic fields on ...
Munazza Sayed, Hussam Amrouch
doaj   +1 more source