Results 1 to 10 of about 1,561,898 (299)

Processes of the Reliability and Degradation Mechanism of High-Power Semiconductor Lasers

Crystals, 2022
High-power semiconductor lasers have attracted widespread attention because of their small size, easy modulation, and high conversion efficiency. They play an important role in national economic construction and national defense construction, including ...
Yue Song, Zhiyong Lv, Jiaming Bai, Shen Niu, Zibo Wu, Li Qin, Yongyi Chen, Lei Liang, Yuxin Lei, Peng Jia, Xiaonan Shan, Lijun Wang   +11 more
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Degradation Characteristics and Mechanism of High Speed 850 nm Vertical-Cavity Surface-Emitting Laser during Accelerated Aging

Photonics, 2022
The degradation process of Vertical-cavity Surface-emitting lasers with high speed and a central wavelength at 850 nm is investigated via constant-current accelerated aging experiments.
Jide Zhang, Wenyuan Liao, Xiaohua Wang, Guoguang Lu, Shaohua Yang, Zhipeng Wei   +5 more
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Evaluation of Hot Carrier Impact on Lateral-DMOS with LOCOS feature

Algerian Journal of Signals and Systems, 2021
Hot carrier stress is evaluated on a laterally diffused MOSFET (LDMOS) by TCAD simulation. The device under test is obtained from process simulation under a 1µm CMOS flow available at CDTA.
Ali HOUADEF, Boualem DJEZZAR
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Effect of Thickness of InP Nucleation Layer on the Two-Step Growth of InP on Si(001)

Crystals, 2022
InP nucleation layers with different thicknesses were grown on Si(001) substrates by gas-source molecular beam epitaxy (GSMBE), and the two-step growth technique was used to overcome the large lattice mismatch (8%) between the InP nucleation layer and Si
Silu Yan, Hongliang Lv, Yuming Zhang, Shizheng Yang   +3 more
doaj   +1 more source

Direct Defect-Level Analysis of Metal–Insulator–Metal Capacitor Using Internal Photoemission Spectroscopy

IEEE Journal of the Electron Devices Society, 2021
Barrier height ( $\phi _{b}$ ), trap state, bandgap ( $E_{g}$ ), and band alignment information of the metal–ZrO2–metal capacitor have been extracted using internal photoemission (IPE) system.
Tae Jin Yoo, Hyeon Jun Hwang, Soo Cheol Kang, Sunwoo Heo, Ho-In Lee, Young Gon Lee, Hokyung Park, Byoung Hun Lee   +7 more
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Novel Step Floating Islands VDMOS with Low Specific on-Resistance by TCAD Simulation

Micromachines, 2022
A novel VDMOS with Step Floating Islands VDMOS (S-FLI VDMOS) is proposed for the first time in this letter, in order to optimize the breakdown voltage (BV) and the specific on-resistance (Ron,sp).
Dongyan Zhao, Yubo Wang, Yanning Chen, Jin Shao, Zhen Fu, Baoxing Duan, Fang Liu, Xiuwei Li, Tenghao Li, Xin Yang, Mingzhe Li, Yintang Yang   +11 more
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Degradation Characteristics and Reliability Assessment of 1310 nm VCSEL for Microwave Photonic Link

Applied Sciences, 2022
The long-term reliability of the commercially available vertical-cavity surface-emitting laser (VCSEL) at 1310 nm wavelength is investigated. To do so, a high current accelerated life test is used to evaluate the 1310 nm VCSEL reliability.
Wenyuan Liao, Rui Gao, Yuebo Liu, Jide Zhang, Shuwang Li, Hao Niu, Shaohua Yang, Canxiong Lai   +7 more
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Reliability analysis and reliable operation of three-level ANPC inverter

Frontiers in Energy Research, 2023
The three-level active neutral-point-clamped (3L-ANPC) inverters have been widely used in medium-voltage high-power electrical drives. The purpose of this paper is to achieve the reliable operation for 3L-ANPC inverters by reliability analysis and ...
Xiaolin Zheng, Xiaoxiao Huang, Peiyu Chen, Zhiqiang Chong, Zhongchen Yuan   +4 more
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WBG-Based PEBB Module for High Reliability Power Converters

IEEE Access, 2021
The increasing presence of power electronic converters in the modern world – from electric vehicles, up to industrial applications – brings up concerns about their reliability, especially in the case of the Wide Band-Gap (WBG) devices ...
Sebastian Baba, Serafin Bachman, Marek Jasinski, Marcin Zelechowski   +3 more
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Accelerating Transistor Simulations With Self-Supervised Graph Attention Networks

IEEE Access
Technology CAD (TCAD) tools are pivotal for transistor modeling, enabling physics-based simulations with high accuracy essential for developing next-generation technology nodes. However, their high computational cost and low throughput severely constrain
Tarek Mohamed, Hussam Amrouch
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