Results 121 to 130 of about 190,755 (383)

Tailoring Hole‐Blocking Layers Enables a Versatile Approach for Fast Photomultiplication‐Type Organic Photodetectors

open access: yesAdvanced Functional Materials, EarlyView.
This study investigates the role of hole‐blocking layers (HBLs), particularly the combination of two HBLs in photomultiplication‐type organic photodetectors (PM‐OPDs), which results in high gain and record‐fast response. The proposed HBL strategy also allows for the use of photoactive layer with balanced donor–acceptor stoichiometry, which can be ...
Awais Sarwar   +7 more
wiley   +1 more source

Research Progress on High-speed Directly Modulated Semiconductor Lasers

open access: yesGuangtongxin yanjiu, 2023
High speed directly modulated semiconductor laser offers high speed transmission rate with high reliability and low cost, making it a cost-effective light source choice for 5th Generation Mobile Communication Technology (5G) fronthaul and data center ...
TIAN Qi   +3 more
doaj  

Reliable measurement of Seebeck coefficient in semiconductors

open access: yesJournal of Physics: Conference Series, 2009
Reliable measurement of the Seebeck coefficient requires painstaking precautions. Unfortunately, these requirements are not met even in commercially available equipment, and therefore the obtained data often contain systematic errors. We describe equipment for reliable Seebeck measurements and present results on YB66 and B4.3C boron carbide as an ...
Walter Winkelbauer   +3 more
openaire   +2 more sources

Climate Change Reporting: A Resource Based Perspective [PDF]

open access: yes, 2011
Kajian ini dilakukan untuk mengkaji tahap serta faktor yang mengalakkan laporan pemanasan global di antara syarikat-syarikat yang tersenarai di Bursa Malaysia.
Shaikh Salim, Siti Zulaikha
core  

Self‐Poled Halide Perovskite Ruddlesden‐Popper Ferroelectric‐Photovoltaic Semiconductor Thin Films and Their Energy Harvesting Properties

open access: yesAdvanced Functional Materials, EarlyView.
Low‐dimensional halide perovskite thin films, (BA)2(MA)n‐1PbnBr3n+1 (n = 1, 2), exhibit both semiconducting and ferroelectric properties, enabling mechanical and light energy harvesting. Using Cr/Cr₂O₃ or PCBM as barrier layers ensures reproducible ferroelectricity.
Raja Sekhar Muddam   +8 more
wiley   +1 more source

A new class of ferromagnetic semiconductors with high Curie temperatures [PDF]

open access: yesarXiv, 2017
Ferromagnetic semiconductors (FMSs), which have the properties and functionalities of both semiconductors and ferromagnets, provide fascinating opportunities for basic research in condensed matter physics and device applications. Over the past two decades, however, intensive studies on various FMS materials, inspired by the influential mean-field Zener
arxiv  

Risk Mitigation Of Outsourcing Manufacturing Process: A Study On The Semiconductor Manufacturing Organizations In Malaysia [PDF]

open access: yes, 2012
Penggunaan perkhidmatan pihak ketiga daripada proses pembuatan semikonduktor menjadi sebahagian daripada strategi korporat sebuah organisasi yang didorong oleh kelebihan kos dan fleksibiliti dalam ketidakpastian.
Rukumangatha Rajah, Sivaraman
core  

Oxygen Defect Engineering of Hexagonal Perovskite Oxides to Boost Catalytic Performance for Aerobic Oxidation of Sulfides to Sulfones

open access: yesAdvanced Functional Materials, EarlyView.
Ru‐substituted hexagonal perovskite SrMnO3, featuring face‐shared oxygen species, is designed as an effective heterogeneous catalyst for the aerobic oxidation of sulfides. The catalyst demonstrates high selectivity to sulfones (>99%) under mild reaction conditions (≥30 °C). Ru substitution promotes oxygen vacancy formation of face‐shared oxygen species
Keiju Wachi   +5 more
wiley   +1 more source

Achieving accurate ionization potential of semiconductors by the efficient Kohn-Sham scheme of density functional theory [PDF]

open access: yesarXiv, 2016
Despite of its huge successes in vast amount of applications, the Kohn-Sham scheme of density functional theory (DFT-Kohn-Sham) has not been able to get reliable ionization potentials (IP) for semiconductors, due to self-interaction error in the local density approximation (LDA) and generalized gradient approximations (GGA), and the difficulty of using
arxiv  

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