Reliability Express Control of the Gate Dielectric of Semiconductor Devices
, 2018 В. А. Солодуха +4 more
openalex +2 more sources
Advanced Functional Materials, EarlyView.Edible electronics needs integrated logic circuits for computation and control. This work presents a potentially edible printed chitosan‐gated transistor with a design optimized for integration in circuits. Its implementation in integrated logic gates and circuits operating at low voltage (0.7 V) is demonstrated, as well as the compatibility with an ...
Giulia Coco +8 more
wiley +1 more source
Influence of material quality and process-induced defects on semiconductor device performance and yield [PDF]
An overview of major causes of device yield degradation is presented. The relationships of device types to critical processes and typical defects are discussed, and the influence of the defect on device yield and performance is demonstrated.
Mckee, W. R., Porter, W. A.
core +1 more source
Plasma-Induced Damage on the Reliability of Hf-Based High-
, 2009 Wu-Te Weng +3 more
openalex +1 more source
Formation of 2D Electron Gas at a Non‐Polar Perovskite Oxide Interface: SrHfO3/BaSnO3
Advanced Functional Materials, EarlyView.Through experiments and Poisson‐Schrödinger simulations, 2D electron gas formed at the non‐polar SrHfO3/BaSnO3 interface is observed. A large conduction band offset enables modulation doping by the intrinsic deep donors in SrHfO3, resulting in carrier confinement in BaSnO3 without relying on interfacial polarization or termination‐layer engineering ...
Jongkyoung Ko +5 more
wiley +1 more source
Atmospheric Doping of Stretchable Polymer Semiconductors for Skin Electronics
Advanced Functional Materials, EarlyView.An atmospheric doping system using oxygen molecules in air as dopants is introduced for stretchable polymer semiconductors. The chemisorbed oxygen molecules act as acceptor, lead to increase not only the hole concentration of the semiconductor film over two orders of magnitude (3.37 × 1017 cm−3) but also electrical properties of the field‐effect ...
Min Woo Jeong +7 more
wiley +1 more source
The Effect of Diluted N2O Annealing Time on Gate Dielectric Reliability of SiC Metal-Oxide Semiconductor Capacitors and Characterization of Performance on SiC Metal-Oxide Semiconductor Field Effect Transistor [PDF]
Zhihua Dong +9 more
openalex +1 more source
Historical Overview of Semiconductor Device Reliability for Telecommunication Networks––Field Data, Prediction Model of Device Failure Rate, and Wear-out Failure Analyses at NTT [PDF]
, 2013 Noboru Shiono, Eisuke Arai, S. Mutoh
openalex +1 more source
Advanced Functional Materials, EarlyView.Herein, the synthesis of Ta₂Pd₃S₈ nanowires is reported via scalable liquid cascade exfoliation and their integration into high‐mobility field‐effect transistors (FETs) and sensitive photodetectors, achieving carrier mobility of up to 27.3 cm2 V⁻¹ s⁻¹ and responsivities of 322.40 A W⁻¹ and 1.85 mA W⁻¹ for single nanowire and network devices ...
Kyung Hwan Choi +13 more
wiley +1 more source