Development of silicon carbide semiconductor devices for high temperature applications [PDF]
The semiconducting properties of electronic grade silicon carbide crystals, such as wide energy bandgap, make it particularly attractive for high temperature applications.
Matus, Lawrence G. +2 more
core +1 more source
Development of high reliability semiconductor devices by copper wire bonding.
J. Hirota +4 more
openalex +2 more sources
Determining Main Reliability Parameters for Semiconductor Foundry CMOS Process [PDF]
Sivchenko Alexander S. +1 more
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Ice Lithography: Recent Progress Opens a New Frontier of Opportunities
This review focuses on recent advancements in ice lithography, including breakthroughs in compatible precursors and substrates, processes and applications, hardware, and digital methods. Moreover, it offers a roadmap to uncover innovation opportunities for ice lithography in fields such as biological, nanoengineering and microsystems, biophysics and ...
Bingdong Chang +9 more
wiley +1 more source
IIRW Deals With a Wide Spectrum of Semiconductor Reliability Challenges [PDF]
openalex +1 more source
A Study on Methods to Improve The reliability of The Search Radar Semiconductor Transceiver Assembly
Junsu Kim, Hye-Gyeong Son
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Near‐Infrared Organic Photovoltaic Electrodes for Subretinal Neurostimulation
Organic photovoltaic electrodes based on the D18:Y6 blend enable precise and light‐controlled activation of retinal ganglion cells in a degenerating retina. NIR Light‐driven activation of retinal ganglion cells, tunable stimulation parameters, and biocompatibility with human retinal organoids highlight their potential for next‐generation prosthetics ...
Andrea Corna +10 more
wiley +1 more source
Reliability and Mode Control of (GaAl)As Visible Semiconductor Lasers
Toshiro Hayakawa
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A UV‐crosslinkable soft anisotropic conductive film (ACF) provides high‐resolution, room‐temperature electrical interfacing. Upon UV exposure, azide crosslinkers within the ACF matrix form covalent bonds with a wide range of C–H‐containing materials, resulting in interfaces that are both mechanically durable and electrically reliable.
Jun Choi +7 more
wiley +1 more source
Improve Intermetal Dielectric Process for HTRB Stability in Power GaN High Electron Mobility Transistor (HEMT) by unbiased-Highly Accelerated Stress Testing (uHAST). [PDF]
Chuang YT, Tumilty N, Wu TL.
europepmc +1 more source

