Development of high reliability semiconductor devices by copper wire bonding.
, 1988 J. Hirota +4 more
openalex +2 more sources
Electroactive Liquid Crystal Elastomers as Soft Actuators
Advanced Functional Materials, EarlyView.Electroactive liquid crystal elastomers (eLCEs) can be actuated via electromechanical, electrochemical, or electrothermal effects. a) Electromechanical effects include Maxwell stress, electrostriction, and the electroclinic effect. b) Electrochemical effects arise from electrode redox reactions.
Yakui Deng, Min‐Hui Li
wiley +1 more source
Oxide Semiconductor for Advanced Memory Architectures: Atomic Layer Deposition, Key Requirement and Challenges. [PDF]
Nanomicro LettLee CH +5 more
europepmc +1 more source
A spacecraft digital stabilization and control system study [PDF]
Digital techniques to increase reliability and accuracy of spacecraft control and stabilization ...
Danbert, H. C. +2 more
core +1 more source
Molecular Cross‐Linking of MXenes: Tunable Interfaces and Chemiresistive Sensing
Advanced Functional Materials, EarlyView.In this study, Ti3C2Tx MXenes are initially functionalized using oleylamine ligands to form stable dispersions in an organic solvent. Subsequently ligand exchange with α,ω‐diaminoalkanes enables cross‐linking, along with precise tuning of interfaces. This structural control translates into tunable charge transport and responsive VOC sensing, showing ...
Yudhajit Bhattacharjee +12 more
wiley +1 more source
Wettability-Controlled Hydrophobic Coating of CMP Component Using PTFE and DLC for Mitigating Slurry Agglomeration and Contamination. [PDF]
Micromachines (Basel)Lee E +7 more
europepmc +1 more source
IIRW Deals With a Wide Spectrum of Semiconductor Reliability Challenges [PDF]
, 2007 openalex +1 more source
Three‐dimensional Antimony Sulfide Based Flat Optics
Advanced Functional Materials, EarlyView.This work presents the development of a grayscale electron beam lithography (g‐EBL) method for fabricating antimony trisulfide (Sb2S3) nanostructures with customizable 3D profiles. The refractive index of g‐EBL patterned Sb2S3 is determined based on the synergy of genetic algorithm and transfer matrix method.
Wei Wang +18 more
wiley +1 more source
Improve Intermetal Dielectric Process for HTRB Stability in Power GaN High Electron Mobility Transistor (HEMT) by unbiased-Highly Accelerated Stress Testing (uHAST). [PDF]
Micromachines (Basel)Chuang YT, Tumilty N, Wu TL.
europepmc +1 more source