Results 171 to 180 of about 99,199 (301)
High reliability screening of semiconductor and integrated circuit devices [PDF]
Jack P. Lombardi+2 more
openalex +1 more source
PerFluoroAlkyl Substances (PFAS) are responsible of major and persistent environmental pollution worldwide. This work demonstrates an ultra‐sensitive sensor for PFAS based on an organic transistor whose gate is functionalized with a binary self‐assembled monolayer containing a perfluorinated molecule.
Rian Zanotti+8 more
wiley +1 more source
Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors [PDF]
Benoit Bakeroot+11 more
core +1 more source
through fluorine chemistry...new dimensions in electronics: HOW HF IMPROVES SEMICONDUCTOR RELIABILITY [PDF]
openalex +1 more source
Defects in materials coexist in multiple forms, undergo dynamic transformations, and influence the material properties. Here, the dynamic transformations of passivation‐related defects in silicon heterojunctions are revealed through the decomposition of dual‐phase capacitance transients.
Do Hoe Kim+17 more
wiley +1 more source
Low‐Cost WS2 Photodetector on Water‐Soluble Paper for Transient Electronics
This study presents a transient WS2 photodetector fabricated on water‐soluble paper using simple mechanical abrasion and pencil drawing. The device demonstrates reliable photoresponse and mechanical flexibility. It dissolves in water within seconds after use, enabling material recovery and reuse.
Gulsum Ersu+4 more
wiley +1 more source
Janus (MoS2) transistors functionalized with sodium alginate (SA) and poly(vinylidene fluoride‐co‐trifluoroethylene) [P(VDF‐TrFE)] exhibit persistent photo‐induced ionic gating, driven by dynamic cation migration at the hybrid interface. This ionic mechanism enables finely tunable photoconductivity and emulates key synaptic plasticity behaviors ...
Yeonsu Jeong+5 more
wiley +1 more source
Reliability of metal semiconductor field-effect transistor using GaN at high temperature [PDF]
Seikoh Yoshida, Joe Suzuki
openalex +1 more source
Charge carrier concentration and mobility in TiO2, ZrO2, and HfO2 powder films are experimentally mapped as a function of temperature. The results uncover polaron‐mediated transport regimes and field‐activated conduction, enabling the design of oxide‐based electronic and energy devices with thermally tunable functionality.
Beatriz Moura Gomes+3 more
wiley +1 more source