Results 291 to 300 of about 120,829 (333)

Who Wants Reliable Plastic Semiconductors?

11th Reliability Physics Symposium, 1973
It has been found that a tri-layer metal contact system, consisting of platinum silicide-titanium-platinum-gold, is at least a factor of five better than a comparable aluminum metalized device with respect to humidity. However, all gold metalized devices are not necessarily this good; an example is given.
E. B. Hakim, G. Malinowski, R. Holevinski   +2 more
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Semiconductor network reliability assessment

Proceedings of the IEEE, 1964
The paper discusses the reliability test plan and test results on semiconductor network microelectronic devices. Included in the test plan are reliability programs, life testing, step stress testing, and environmental tests. The failure analysis-corrective action cycle is discussed at length.
J. Adams, W. Workman
openaire   +1 more source

Elements of semiconductor-device reliability

Proceedings of the IEEE, 1974
Semiconductor-device quality and reliability are discussed in the context of the major factors producing failures, the relationship of process technology and its control to device quality and reliability, the testing procedures used to determine quality levels, and screening procedures that can be employed to segregate certain levels of device quality.
C.G. Peattie, J.D. Adams, S.L. Carrell, T.D. George, M.H. Valek   +4 more
openaire   +1 more source

Semiconductor laser reliability

SPIE Proceedings, 1998
In this paper, a review of the state-of-the-art in semiconductor laser diode reliability is presented, with a particular regard to the reliability of laser diodes used in long-distance telecommunication system. Remarkable advances in semiconductor laser reliability have been demonstrated over their thirty year history, leading to estimated median ...
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Optical semiconductor device reliability

Microelectronics Reliability, 2002
Abstract Based on the degradation modes and mechanisms clarified in 1980s and 1990s, reliability of laser diodes and photodiodes is discussed for application to current optical fiber networks such as communication systems employing wavelength-division-multiplexing technique (WDM), high-frequency modulation technique, etc.
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Reliability of compound semiconductor devices

Microelectronics Reliability, 1992
Abstract This paper reviews the reliability of III–V semiconductor devices with particular attention to the failure mechanisms typical of these structures. Instability effects at the surface of various FETs have been examined and the problems related to the metallurgies employed.
FANTINI, Fausto, F. MAGISTRALI
openaire   +2 more sources

Reliability of semiconductor devices

Physics in Technology, 1976
Report on Metallization systems for semiconductor devices, 13 February 1976 Imperial College, London.
openaire   +1 more source

Semiconductor Device Reliability

1989
I. Reliability Testing.- 1.1 The Influence of Temperature and Use Conditions on the Degradation of LED Parameters.- 1.2 An Historical Perspective of GaAs MESFET Reliability Work at Plessey.- 1.3 Screening and Burn-In: Application to Optoelectronic Device Selection for High-Reliability S280 Optical Submarine Repeaters.- 1.4 Assuring the Reliability of ...
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Reliability of MgAI Semiconductor Interconnects

IEEE Transactions on Reliability, 1970
Data are presented comparing 1-percent MgAI wire with 1-percent SiAI wire for ultrasonically bonded interconnects on semiconductor devices. The effects of annealing time and temperature on the strength of the wire demonstrate the mechanical superiority of the 1-percent MgAI wire.
John M. Pankratz, Dean R. Collins
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Reliability investigation of semiconductor coolers

XVI ICT '97. Proceedings ICT'97. 16th International Conference on Thermoelectrics (Cat. No.97TH8291), 2002
The life tests on the thermoelectric shock of semiconductor coolers show that the life of semiconductor coolers follows the Weibull distribution. After the early failed devices are removed, the failure rule of the devices can be described as an exponential distribution. The main failure mode is the crack between electric couple material and welding pad.
null Liu Zhenmao, null Wang Xilian, null Liu Xiaowei, null Quan Wuyun, null Sun Shufang, null Ye Shuichi, null Lui Jingwei, null Chen Lunqiang   +7 more
openaire   +1 more source