Results 291 to 300 of about 2,332,362 (329)

Reliable electron bombarded semiconductor power devices

1973 International Electron Devices Meeting, 1973
During the earlier development of EBS devices, degradation mechanisms imposed severe limitations on achievable performance and operating life. Essentially all of the difficulties have been overcome and a number of devices have now operated for many thousands of hours at high average power with no failures.
A. Silzars, D.J. Bates, A. Ballonoff, G. Taylor   +3 more
openaire   +1 more source

Reliability Of Ingaasp Semiconductor Lasers

SPIE Proceedings, 1987
The degradation mechanisms and reliability assurance strategies of InGaAsP semiconductor lasers that are currently being used in many commercial lightwave systems are discussed.
openaire   +1 more source

Reliability assurance of individual semiconductor components

Proceedings of the IEEE, 1974
Where small numbers of highly reliable semiconductor devices are required, conventional methods of procurement are found to have deficiencies. An approach to procurement is proposed which is cost effective, accommodates new device types, and assures reliability in the individual device.
R.F. Haythornthwaite, A.R. Molozzi, D.V. Sulway   +2 more
openaire   +1 more source

A reliability appraisal of semiconductor devices

Proceedings of the IEE - Part B: Electronic and Communication Engineering, 1959
The current problems of assessing the reliability of semiconductor devices are discussed, and reference is made to the order of reliability required in typical applications.The evidence from life tests carried out on devices drawn from production lines of transistors and diodes shows how variations in operating conditions and assessment levels affect ...
R. Brewer, W.W.D. Wyatt
openaire   +1 more source

Semiconductor reliability for the next century

Physics World, 1993
The electronics industry now routinely produces devices with up to 1000 million transistors on a single semiconductor chip and this VLSI (very-large-scale integration) revolution shows no sign of stopping. As computer memory requirements push VLSI microfabrication technologies to new extremes, the next generation of dynamic random access memory (DRAM ...
openaire   +1 more source

Pd-coated Cu wire bonding technology: Chip design, process optimization, production qualification and reliability test for high reliability semiconductor devices

2012 IEEE 62nd Electronic Components and Technology Conference, 2012
I. Singh, I. Qin, Hui Xu, C. Huynh, Shin Low, H. Clauberg, B. Chylak, V. L. Acoff   +7 more
semanticscholar   +1 more source

Reliability of Ag Sintering for Power Semiconductor Die Attach in High-Temperature Applications

IEEE transactions on power electronics, 2017
Fang-li Yu, Jinzi Cui, Zhangming Zhou, K. Fang, R. Johnson, M. Hamilton   +5 more
semanticscholar   +1 more source

Reliability Issue in Compound Semiconductor Heterojunction Devices

1998
The failure mechanisms affecting electron devices based on compound semiconductors are reviewed.
FANTINI, Fausto, BORGARINO, Mattia, L. CATTANI, P. COVA, R. MENOZZI, G. SALVIATI, C. CANALI, G. MENEGHESSO, E. ZANONI   +8 more
openaire   +3 more sources

Improving the reliability of semiconductor converters for supplying electric drives of exhausters

, 2017
A. A. Gryzlov, M. A. Grigor’ev, A. A. Imanova   +2 more
semanticscholar   +1 more source

High-Reliability Semiconductor Lasers for Optical Communications

IEEE J. Sel. Areas Commun., 1986
M. Hirao, K. Mizuishi, Michiharu Nakamura   +2 more
semanticscholar   +1 more source