Results 121 to 130 of about 596 (136)

(Invited) A Reconfigurable Remotely Epitaxial VO2 Electrical Heterostructure

ECS Meeting Abstracts, 2020
VO2 has been regarded as an archetypal phase transition building block with superior metal-insulator transition characteristics. However, reconfigurable VO2-based heterostructure and the associated devices are rare due to the fundamental challenge in integrating high quality VO2 in technologically important substrates.
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Remote epitaxy using graphene enables growth of stress-free GaN

Nanotechnology, 2019
Abstract The properties of group III-Nitrides (III-N) such as a large direct bandgap, high melting point, and high breakdown voltage make them very attractive for optoelectronic applications. However, conventional epitaxy on SiC and sapphire substrates results in strained and defective films with consequently poor device performance ...
Journot, T, Okuno, H, Mollard, N, Michon, A, Dagher, R, Gergaud, P, Dijon, J, Kolobov, A, Hyot, B   +8 more
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Study of the H2 remote plasma cleaning of InP substrate for epitaxial growth

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1996
The removal of the native oxide overlayers on the surfaces of III–V semiconductors, although widely investigated, requires further examination. Specifically, the main emphasis of research has been on the oxide layer characterization and, hence, on the development of cleaning procedures.
M Losurdo, P Capezzuto, G Bruno
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Remote epitaxial crystalline perovskites for ultrahigh-resolution micro-LED displays

Nature Nanotechnology
The miniaturization of light-emitting diodes (LEDs) is pivotal in ultrahigh-resolution displays. Metal-halide perovskites promise efficient light emission, long-range carrier transport and scalable manufacturing for bright microscale LED (micro-LED) displays.
Meng Yuan, Jiangang Feng, Hui Li, Hanfei Gao, Yuchen Qiu, Lei Jiang, Yuchen Wu   +6 more
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Remote epitaxy and selective epitaxy on vdW materials for layer transfer

AEFM 2022 (Advanced Epitaxy for Freestanding Membranes and 2D Materials) at Cambridge, MA, US, July 6-8, 2022, 2022
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Remote epitaxy of InxGa1-xAs (0 0 1) on graphene covered GaAs(0 0 1) substrates

Journal of Crystal Growth, 2022
Rüdiger Goldhahn, Martin Feneberg, Dirk Reuter   +2 more
exaly  

Influence of Graphene Stability on III-Nitride Remote Epitaxy for Exfoliation

ACS Applied Nano Materials, 2023
Lai Wang, Changzheng Sun, Jiadong Yu
exaly  

Transferable, flexible white light-emitting diodes of GaN p–n junction microcrystals fabricated by remote epitaxy

Nano Energy, 2021
Won Il Park, Woo Seok Yang, Byeong-Soo Bae   +2 more
exaly  

Controlling the Balance between Remote, Pinhole, and van der Waals Epitaxy of Heusler Films on Graphene/Sapphire

Nano Letters, 2022
Vivek Saraswat, Taehwan Jung, Michael Arnold   +2 more
exaly  

The essential difference between remote epitaxy and van der Waals epitaxy: Long-range orbital hybridization at the GaN/graphene/AlN interface

Journal of Crystal Growth, 2023
Yipu Qu, Yuning Wang
exaly