Results 101 to 110 of about 596 (136)

A Study of the Avalanche Multiplication and Excess Noise in Al _<i>x</i> In_1-<i>x</i> As_γSb_1‑ _γ Avalanche Photodiodes Lattice-Matched to GaSb. [PDF]

ACS Photonics
Jin X, Zhou W, Zhao Y, Tian Q, Yi X, Tao X, Craig A, Modak M, Marshall A, Xu Y, Wang G, David JPR, Buller GS.   +12 more
europepmc   +1 more source

Role of mechanical stress on the electrothermal and OFF state current in scaled FinFET devices. [PDF]

Sci Rep
Shubham, Pandey RK.
europepmc   +1 more source

Above-Room-Temperature Ferromagnetism in Large-Scale Epitaxial Fe₃GaTe₂/Graphene van der Waals Heterostructures. [PDF]

ACS Nano
Shinwari T, Khan KIA, Lv H, Kassa AA, Munnik F, Josephy S, Trampert A, Ukleev V, Luo C, Radu F, Herfort J, Hanke M, Lopes JMJ.   +12 more
europepmc   +1 more source

Spectroscopy of heat transport and violation of the Wiedemann-Franz law in GaAs hydrodynamic mesoscopic channel. [PDF]

Sci Rep
Pusep YA, Patricio MAT, Glazov MM, Oliveira VA, Teodoro MD, Levin AD, Bakarov AK, Gusev GM.   +7 more
europepmc   +1 more source

Microgravity-enabled growth of uniform InAsSb bulk single crystal. [PDF]

NPJ Microgravity
Huang J, Zheng H, Yin Z, Wu J, Xia Z, Pan X, Jiang J, Zhu D, Tang M, Liu X, Zhang X.   +10 more
europepmc   +1 more source

Novel electrostatic dry lift-off and transfer route for vertically aligned nanocomposite oxide thin films. [PDF]

Nano Converg
Wells MP, Bakhit B, Fairclough SM, Weingard JJH, Ducati C, MacManus-Driscoll JL.   +5 more
europepmc   +1 more source

Visualizing Nanoscale Charge Flows in Multi-Dimensional WSe2/GaAs Vertical Diodes

Piazza V, Zendrini M, Blaga C, Wodzislawski K, Rudra A, Banerjee M, Morral AFi.   +6 more
europepmc   +1 more source

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Fabrication of a Microcavity Prepared by Remote Epitaxy over Monolayer Molybdenum Disulfide

ACS Nano, 2022
Advances in epitaxy have enabled the preparation of high-quality material architectures consisting of incommensurate components. Remote epitaxy based on lattice transparency of atomically thin graphene has been intensively studied for cost-effective advanced device manufacturing and heterostructure formation.
Young Joon Hong, Xuedan Ma, Towfiq Ahmed   +2 more
exaly   +3 more sources

Exceptional Thermochemical Stability of Graphene on N-Polar GaN for Remote Epitaxy

ACS Nano, 2023
In this study, we investigate the thermochemical stability of graphene on the GaN substrate for metal-organic chemical vapor deposition (MOCVD)-based remote epitaxy. Despite excellent physical properties of GaN, making it a compelling choice for high-performance electronic and light-emitting device applications, the challenge of thermochemical ...
Suklyun Hong, Young Joon Hong, Moon Kim   +2 more
exaly   +3 more sources

Remote Epitaxy: Fundamentals, Challenges, and Opportunities

Nano Letters
Advanced heterogeneous integration technologies are pivotal for next-generation electronics. Single-crystalline materials are one of the key building blocks for heterogeneous integration, although it is challenging to produce and integrate these materials.
Jun Min Suh, , Xinyuan Zhang
exaly   +3 more sources