Results 81 to 90 of about 799 (158)

Deposition of epitaxial Si/Si-Ge/Ge and novel high-K gate dielectrics using remote plasma chemical vapor deposition

, 2003
textBoth high quality epitaxial Si/Si-Ge/Ge films and novel high-k gate dieletrics have been deposited using an upgraded Remote Plasma Chemical Vapor Deposition (RPCVD) system. The upgrade of the RPCVD system consisted of two parts.
Chen, Xiao, 1972-
core  

Challenge and opportunity in remote epitaxy

MRS Virtual Spring/Fall Meeting 2020, 2020
openaire   +2 more sources

Determination of the preferred epitaxy for III-nitride semiconductors on wet-transferred graphene. [PDF]

Sci Adv, 2023
Liu F, Wang T, Gao X, Yang H, Zhang Z, Guo Y, Yuan Y, Huang Z, Tang J, Sheng B, Chen Z, Liu K, Shen B, Li XZ, Peng H, Wang X.   +15 more
europepmc   +1 more source

Remote Epitaxial Growth of Compound Semiconductors through Graphene

MRS Virtual Spring/Fall Meeting 2020, 2020
Kyusang Lee, Jeehwan Kim
openaire   +2 more sources

Remote Epitaxy by In-Situ Grown BN and InGaN Strain Relaxation

Compound semiconductors have superior material properties over silicon, making them good candidates for optoelectronics and power electronics. As the need for electronics with higher flexibility and smaller size increases, lift-off methods for ...
Liu, Yunpeng
core  

Mechanism of remote epitaxy using two dimensional materials

, 2017
Thesis: S.M., Massachusetts Institute of Technology, Department of Mechanical Engineering, 2017.Cataloged from PDF version of thesis.Includes bibliographical references (pages 36-40).Van der Waals epitaxy (vdWE) has gained great interest as it provides ...
Cruz, Samuel (Samuel Steven)
core  

Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy

, 2001
We have studied the growth of GaInNAs/GaAs quantum well (QW) by molecular beam epitaxy using a DC plasma as the N sourer. The N concentration was independent of the As pressure and the In concentration, but inversely proportional to the growth rate.
Li LH, Zhang W, Pan Z,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China., Pan Z Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China., Pan Z, Lin YW, Wu RH, Wang XU   +7 more
core  

Emergent Freestanding Complex Oxide Membranes for Multifunctional Applications. [PDF]

Adv Mater
Li B, Liu Y, Liu J, See JSY, Xing K, Qi DC, Renshaw Wang X.   +6 more
europepmc   +1 more source

A universal 2D-on-SiC platform for heterogeneous integration of epitaxial III-N membranes. [PDF]

Sci Adv
Kim SH, Lee H, Kim DG, Kim D, Kim S, Kim H, Ha S, Yang H, Jang Y, Yoon J, Lee B, Lee JH, Chung RBK, Park H, Kim S, Lee TH, Kum HS.   +16 more
europepmc   +1 more source

Epitaxy of Emerging Materials and Advanced Heterostructures for Microelectronics and Quantum Sciences. [PDF]

Small Methods
Lee Y, Choi SH, Kim H, Yoo J.
europepmc   +1 more source