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Characterization and Computational Modeling of Flexible Freestanding GaAs‐Based Solar Cells
Engineering ReportsThe development of flexible freestanding single‐junction GaAs photovoltaic (PV) cells demonstrates a major innovation in solar technology, providing a lightweight, high‐efficiency substitute to traditional silicon‐based PV cells.
Athil S. Al‐Ezzi +2 more
doaj +1 more source
, 2020 Semiconductor epitaxy on two-dimensional materials is beneficial for transferrable and flexible device applications. Graphene, due to the absence of permanent electric dipoles, cannot screen the electric field coming from the opposite side surface ...
이상욱, 신동훈
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Remote epitaxy of cubic gallium nitride on graphene-covered 3C-SiC substrates [PDF]
Die Remote Epitaxie ist eine relativ neue Methode, die mehrere Vorteile bietet. Unteranderem ermöglicht sie den Einfluss von Gitterfehlpassungen zu reduzieren und die Möglichkeit, Epitaxieschichten von dem Substrat abzulösen.
Littmann, Mario
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, 2023 Conventional epitaxy has significantly advanced the semiconductor industry, driving remarkable progress in various application fields such as electronics and optoelectronics.
Lu, Kuangye
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Remote epitaxy of group iii nitrdes via graphene.
, 2022 The aim of this work is to investigate group III nitrides thin films growth on graphene and to lift-off thin remote epitaxially grown layers. Group III nitrides has been investigated extensively during the last decade due to their unique properties ...
Augulis, Dominykas,
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Van der Waals epitaxy and beyond for monolithic 3D integration
As the limitations of silicon-based technologies approach their physical boundaries, monolithic three-dimensional integration (M3D) and two-dimensional (2D) materials, such as transition metal dichalcogenides (TMDs), have emerged as promising solutions ...
Kim, Hyunjun +5 more
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Stability of Graphene and Influence of AlN Surface Pits on GaN Remote Heteroepitaxy for Exfoliation
Remote epitaxy is a promising technology that has recently attracted considerable attention, which enables the growth of thin films that copy the crystallographic characteristics of the substrate through two-dimensional material interlayers.
Kyung-Pil Kim (8431554) +10 more
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Characterisation and optimisation of alternating current thin film electroluminescent displays
, 2014 This Thesis presents research undertaken to investigate the electro-optical characterisation and optimisation of Thin Film Electroluminescent (TFEL) devices and Laterally Emitting Thin Film Electroluminescent (LETFEL) devices with respect to device ...
Farrow, C
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MOLECULAR BEAM EPITAXY OF ANTIMONY QUANTUM WELLS FOR PROBING TOPOLOGICAL SURFACE STATES [PDF]
, 2017 A topoelectronic transition was predicted for an Sb quantum well (QW) as a function of QW thickness. Bulk Sb is a semimetal with a negative bandgap, with neither the conduction band minimum nor the valence band maximum at the Γ point. The Dirac point for
Wickramasinghe, Kaushini
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Remote Epitaxy and Exfoliation of GaN via Graphene
The remote epitaxy of GaN via graphene has attracted much attention due to the potential of easy mechanical exfoliation, and the exfoliated layers can be transferred onto foreign substrates according to the application needs, which is beneficial to ...
Xu Han (141301) +15 more
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