Results 51 to 60 of about 799 (158)

The Study on Fabrication and Characterization of Al_0.2In_0.8Sb/InAs_0.4Sb_0.6 Heterostructures by Molecular Beam Epitaxy

IEEE Access, 2019
Al0.2In0.8Sb/InAs0.4Sb0.6 heterostructures have been successfully grown on GaAs substrate by molecular beam epitaxy (MBE). The influence of three different metamorphic buffer layers on the transport properties and crystal quality of the samples has been ...
Jing Zhang, Hongliang Lv, Yifeng Song, Haiqiao Ni, Zhichuan Niu, Yuming Zhang   +5 more
doaj   +1 more source

Impact of Ions and Radicals on Etch Selectivity and Fluorocarbon Polymerization in the Selective Dry Etching of Si0.7Ge0.3

Plasma Processes and Polymers, Volume 23, Issue 6, June 2026.
Ion screening in CF4 plasma reduces CFx+ ion flux while maintaining radical fluxes, suppressing fluorocarbon polymer accumulation. This enables smooth SiGe etching with selectivity up to 30:1 in multilayer stacks. ABSTRACT Selective etching of Si0.7Ge0.3 was investigated in CF4 inductively coupled plasma using an ion‐screening approach to decouple ion ...
Joosung Kang, Yongjoon Choi, Dongmin Yoon, Jihye Kim, U‐In Chung, Jeonghoon Son, Dae‐Hong Ko   +6 more
wiley   +1 more source

Free standing epitaxial oxides through remote epitaxy: the role of the evolving graphene microstructure

Nanoscale
Epitaxial BaTiO3 (BTO) was grown via remote epitaxy using CVD graphene, and freestanding membranes were transferred to Si. It correlates graphene microstructure, defect formation during pulsed laser deposition, and BTO crystallinity.
Asraful Haque, Suman Kumar Mandal, Shubham Kumar Parate, Harshal Jason D′souza, Pavan Nukala, Srinivasan Raghavan   +5 more
openaire   +5 more sources

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, Volume 36, Issue 41, 21 May 2026.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

Remote epitaxy of III-N membranes on amorphous boron nitride

, 2021
Thesis: S.M., Massachusetts Institute of Technology, Department of Mechanical Engineering, February, 2021Cataloged from the official PDF version of thesis.Includes bibliographical references (pages 35-37).Amorphous boron nitride (aBN) has found broad ...
Liu, Yunpeng(Mechanical engineer)Massachusetts Institute of Technology.
core  

Wafer‐Scale Single‐Crystal Boron Nitride: Synthesis and Integration in 2D Electronics

Advanced Materials Interfaces, Volume 13, Issue 9, 5 May 2026.
This Review highlights recent breakthroughs in wafer‐scale hBN synthesis and its integration into next‐generation 2D electronics. We analyze growth kinetics, epitaxial strategies, and stacking‐sequence control while correlating material quality with device performance.
Jaewon Wang, Soon‐Yong Kwon
wiley   +1 more source

Two‐Dimensional Piezoelectric Nanomaterials for Nanoelectronics and Energy Harvesting

ENERGY &ENVIRONMENTAL MATERIALS, Volume 9, Issue 3, May 2026.
Two‐Dimensional Piezoelectric Nanomaterials from properties to applications. Smart materials, especially piezoelectric materials, have gained popularity over the last two decades. Two‐dimensional (2D) piezoelectric materials exhibit attributes including great flexibility, ease of workability, extensive surface area, and many active sites, indicating ...
Yujun Cao, Sikandar Aftab, Zeeshan Ali, Muhammad Farooq Khan, Ghazanfar Nazir, Awais Khalid, Hosameldin Helmy Hegazy, Ibrahim S. Yahia, Altaf Hussain Rajpar, Burragoni Sravanthi Goud, Jae Hong Kim, Erdi Akman, Xin Li   +12 more
wiley   +1 more source

Detection of Toxic Gases and Volatile Organic Compounds Using Highly Adsorptive Nanomaterials: A Comprehensive Assessment

EcoMat, Volume 8, Issue 5, May 2026.
This review highlights how nanomaterials with high adsorption capacities including carbon‐based structures, transition metal oxides, 2D layers, and zeolites enable sensitive and selective detection of toxic gases and VOCs. Their tailored properties and sensing mechanisms drive the development of next‐generation gas sensors for environmental and ...
Hamdy A. Ismail, Sabbah Ataya, Mohamed M. Goda, Ahmed G. Hussein, Ahmed Ramah, Ahmad G. Ramadan, Rashid Khan, Joy Djuansjah, Swellam W. Sharshir, Ahmed El‐Harairy   +9 more
wiley   +1 more source

Telecom C‐Band Source of Triggered Polarization‐Entangled Photon Pairs Combining High Coincidence Rates, Fidelities and Single‐Photon Purity

Advanced Quantum Technologies, Volume 9, Issue 5, May 2026.
This work presents a high‐brightness source of polarization‐entangled photon pairs emitting in the telecom C‐band. The source is based on semiconductor quantum dots incorporated in a planar cavity structure. In this way, triggered emission with a coincidence rate of 201 kcps combined with g2(0) values of about 0.01 and entanglement fidelities of up to ...
Raphael Joos, Mohamed Helal, Michal Vyvlečka, Lena Engel, Aditi Javali, Benjamin Breiholz, Ponraj Vijayan, Johannes Michl, Michael Jetter, Sven Höfling, Tobias Huber‐Loyola, Giora Peniakov, Simone L. Portalupi, Peter Michler   +13 more
wiley   +1 more source

Analytical model for the remote epitaxial potential

We propose an analytical model for the remote bonding potential of the substrate that permeates through graphene during remote epitaxy. Our model, based on a Morse interatomic potential, includes the attenuation due to the increased film-substrate separation and due to graphene free carrier screening.
Kawasaki, Jason K, Campbell, Quinn T
openaire   +2 more sources