Results 51 to 60 of about 596 (136)

Advances in Gate Dielectrics for 2D Electronics

physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 7, July 2026.
This review discusses advanced gate dielectric integration for 2D electronic devices, including layered and nonlayered dielectric materials, while highlighting strategies such as seed‐assisted ALD, transfer methods, and in situ oxidation. By focusing on interface engineering and materials innovation, new routes for scalable, high‐performance 2D ...
Moon‐Chul Jung, Jiwoo Kim, Gwan‐Hyoung Lee   +2 more
wiley   +1 more source

Free standing epitaxial oxides through remote epitaxy: the role of the evolving graphene microstructure

Nanoscale
Epitaxial BaTiO 3 (BTO) was grown via remote epitaxy using CVD graphene, and freestanding membranes were transferred to Si. It correlates graphene microstructure, defect formation during pulsed laser deposition, and BTO crystallinity.
Asraful Haque, Suman Kumar Mandal, Shubham Kumar Parate, Harshal Jason D′souza, Pavan Nukala, Srinivasan Raghavan   +5 more
openaire   +5 more sources

Solution‐Processed Thin‐Film Transistors With Tunable Temporal Dynamics for Neuromorphic Computing

Advanced Functional Materials, Volume 36, Issue 51, 25 June 2026.
Solution‐processed CNT and CNT/P3HT ion‐gated transistors exhibit materials‐defined synaptic timescales: fast CNT devices for high‐frequency spiking and slow hybrid devices for temporal integration. Embedding these dynamics into coupled reservoir‐computing and spiking neural network simulations reveals that a Hybrid‐Reservoir / CNT‐SNN architecture ...
Kevin Schnittker, Haoyi Lin, Zahra Bahrami, Strahinja Marinkovic, Sung Hyun Lee, Joseph Andrews   +5 more
wiley   +1 more source

Remote Epitaxy of SiC: Feasibility, Challenges, and Pathways

Solid State Phenomena
Silicon carbide (SiC) is a promising wide-bandgap semiconductor for advanced quantum technologies. Yet, despite progress in bulk and epitaxial growth, a reliable SiC-on-insulator platform remains lacking. Remote epitaxy, mediated by a 2D interlayer, offers a potential pathway to transferable SiC thin films and substrate reuse.
Misagh Ghezellou, Justinas Palisaitis, Jawad Ul-Hassan   +2 more
openaire   +1 more source

Twist Engineering of Hybrid 2D van der Waals‐Transition Metal Oxide Membranes

Advanced Physics Research, Volume 5, Issue 6, June 2026.
The integration of transition metal oxide membranes with 2D van der Waals materials offers exciting opportunities to study new interfacial phenomena. These interactions can create complex moiré patterns that change the materials' properties. Understanding these interactions, influenced by symmetry and distortion, poses significant challenges and ...
Mar Garcia Hernandez, Peter Bøggild, Mads Brandbyge, Jacobo Santamaria, Nini Pryds   +4 more
wiley   +1 more source

Impact of Ions and Radicals on Etch Selectivity and Fluorocarbon Polymerization in the Selective Dry Etching of Si0.7Ge0.3

Plasma Processes and Polymers, Volume 23, Issue 6, June 2026.
Ion screening in CF4 plasma reduces CFx+ ion flux while maintaining radical fluxes, suppressing fluorocarbon polymer accumulation. This enables smooth SiGe etching with selectivity up to 30:1 in multilayer stacks. ABSTRACT Selective etching of Si0.7Ge0.3 was investigated in CF4 inductively coupled plasma using an ion‐screening approach to decouple ion ...
Joosung Kang, Yongjoon Choi, Dongmin Yoon, Jihye Kim, U‐In Chung, Jeonghoon Son, Dae‐Hong Ko   +6 more
wiley   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, Volume 36, Issue 41, 21 May 2026.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

A review on advances in epitaxial growth technology of MoS2 2D materials

Journal of Science: Advanced Materials and Devices
As a typical two-dimensional transition metal disulfide compound, MoS2 shows great potential for applications in electronic and optoelectronic devices due to its unique electronic, optical and mechanical properties.
Yang Wang, Zhou Jiang, Shaojie Zhang, Huayang Zhou, Tianhao Yu, Kaiming Zhou, Zhihan Sun, Wenbo Sun, Danyang Liu, Shaobo Gao   +9 more
doaj   +1 more source

Wafer‐Scale Single‐Crystal Boron Nitride: Synthesis and Integration in 2D Electronics

Advanced Materials Interfaces, Volume 13, Issue 9, 5 May 2026.
This Review highlights recent breakthroughs in wafer‐scale hBN synthesis and its integration into next‐generation 2D electronics. We analyze growth kinetics, epitaxial strategies, and stacking‐sequence control while correlating material quality with device performance.
Jaewon Wang, Soon‐Yong Kwon
wiley   +1 more source

Analytical model for the remote epitaxial potential

We propose an analytical model for the remote bonding potential of the substrate that permeates through graphene during remote epitaxy. Our model, based on a Morse interatomic potential, includes the attenuation due to the increased film-substrate separation and due to graphene free carrier screening.
Kawasaki, Jason K, Campbell, Quinn T
openaire   +2 more sources