Results 141 to 150 of about 6,518 (175)

Fabrication of a Microcavity Prepared by Remote Epitaxy over Monolayer Molybdenum Disulfide

ACS Nano, 2022
Advances in epitaxy have enabled the preparation of high-quality material architectures consisting of incommensurate components. Remote epitaxy based on lattice transparency of atomically thin graphene has been intensively studied for cost-effective advanced device manufacturing and heterostructure formation.
Yeonhoo Kim, John Watt, Xuedan Ma, Towfiq Ahmed, Suhyun Kim, Kibum Kang, Ting S. Luk, Young Joon Hong, Jinkyoung Yoo   +8 more
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(Invited) A Reconfigurable Remotely Epitaxial VO2 Electrical Heterostructure

ECS Meeting Abstracts, 2020
VO2 has been regarded as an archetypal phase transition building block with superior metal-insulator transition characteristics. However, reconfigurable VO2-based heterostructure and the associated devices are rare due to the fundamental challenge in integrating high quality VO2 in technologically important substrates.
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Remote epitaxy through graphene enables two-dimensional material-based layer transfer

Nature, 2017
Epitaxy-the growth of a crystalline material on a substrate-is crucial for the semiconductor industry, but is often limited by the need for lattice matching between the two material systems. This strict requirement is relaxed for van der Waals epitaxy, in which epitaxy on layered or two-dimensional (2D) materials is mediated by weak van der Waals ...
Yunjo, Kim, Samuel S, Cruz, Kyusang, Lee, Babatunde O, Alawode, Chanyeol, Choi, Yi, Song, Jared M, Johnson, Christopher, Heidelberger, Wei, Kong, Shinhyun, Choi, Kuan, Qiao, Ibraheem, Almansouri, Eugene A, Fitzgerald, Jing, Kong, Alexie M, Kolpak, Jinwoo, Hwang, Jeehwan, Kim   +16 more
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Exceptional Thermochemical Stability of Graphene on N-Polar GaN for Remote Epitaxy

ACS Nano, 2023
In this study, we investigate the thermochemical stability of graphene on the GaN substrate for metal-organic chemical vapor deposition (MOCVD)-based remote epitaxy. Despite excellent physical properties of GaN, making it a compelling choice for high-performance electronic and light-emitting device applications, the challenge of thermochemical ...
Joonghoon Choi, Junseok Jeong, Xiangyu Zhu, Junghwan Kim, Bong Kyun Kang, Qingxiao Wang, Bo-In Park, Seokje Lee, Jekyung Kim, Hyunseok Kim, Jinkyoung Yoo, Gyu-Chul Yi, Dong-Seon Lee, Jeehwan Kim, Suklyun Hong, Moon J. Kim, Young Joon Hong   +16 more
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Remote Epitaxy of ZnO Microrods on Graphene-Coated Substrates

ECS Meeting Abstracts, 2019
Two-dimensional nanomaterials are emerging for use as seed substrates toward transferrable, transparent, or flexible device applications.[1,2] In the van der Waals heteroepitaxy, graphene acted as seed for epitaxial overlayers of III–V or II–VI nanostructures or thin films.[3-5] Because the hydrophobic surface of graphene, given from lack of dangling
Junseok Jeong, Suklyun Hong, Young Joon Hong   +2 more
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Remote epitaxial crystalline perovskites for ultrahigh-resolution micro-LED displays

Nature Nanotechnology
The miniaturization of light-emitting diodes (LEDs) is pivotal in ultrahigh-resolution displays. Metal-halide perovskites promise efficient light emission, long-range carrier transport and scalable manufacturing for bright microscale LED (micro-LED) displays.
Meng Yuan, Jiangang Feng, Hui Li, Hanfei Gao, Yuchen Qiu, Lei Jiang, Yuchen Wu   +6 more
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Remote plasma-enhanced chemical-vapor deposition of epitaxial Ge films

Journal of Applied Physics, 1986
Epitaxial Ge films have been deposited at 300 °C using a remote plasma-enhanced chemical-vapor deposition technique where metastable He atoms flow downstream from the plasma region to dissociate GeH4 molecules into deposition precursor species. Ge epitaxy is demonstrated on Ge(111), Si(100), and GaAs(111)Ga face substrates.
R. A. Rudder, G. G. Fountain, R. J. Markunas   +2 more
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Si epitaxial growth at low temperatures using remote plasma process

Applied Surface Science, 1996
We are successful in growing Si epitaxial layer below 200°C using remote plasma process. A plasma tube with concentric arrangement was accepted: argon and/or hydrogen plasma excited with rf power were supplied through the outer glass tube, and disilane source gas was introduced through the inner stainless tube.
A. Yoshida, K. Utsumi, A. Ganjoo
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Exploring SiC CVD growth parameters compatible with remote epitaxy

Journal of Vacuum Science & Technology B
Remote epitaxy (RE) is a promising technique where monolayers of van der Waals-bonded (i.e., 2D) material act as a release layer for epitaxial film removal and substrate reuse. Epitaxial graphene (EG) grown in situ on SiC(0001) is an ideal RE substrate as it avoids damage or contamination associated with 2D material transfer.
Daniel J. Pennachio, Jenifer R. Hajzus, Rachael L. Myers-Ward   +2 more
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Remote Epitaxy and Exfoliation of GaN via Graphene

ACS Applied Electronic Materials, 2022
Xu Han, Jiadong Yu, Zhenhao Li, Xun Wang, Zhibiao Hao, Yi Luo, Changzheng Sun, Yanjun Han, Bing Xiong, Jian Wang, Hongtao Li, Yuantao Zhang, Bin Duan, Jing Ning, Haidi Wu, Lai Wang   +15 more
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