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Remote epitaxy of GaN via graphene on GaN/sapphire templates

Journal of Physics D: Applied Physics, 2021
Abstract Remote epitaxy via graphene has recently attracted significant attention, since it provides the possibility to lift-off the grown epitaxial layer, reuse the substrate, and produce flexible devices. However, extensive research is still necessary to fully understand the III-nitride formation on the van der Waals surface of a ...
Kazimieras Badokas   +8 more
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Remote epitaxy of copper on sapphire through monolayer graphene buffer

Nanotechnology, 2018
In this work, we show that remote heteroepitaxy can be achieved when Cu thin film is grown on single crystal, monolayer graphene buffered sapphire(0001) substrate via a thermal evaporation process. X-ray diffraction and electron backscatter diffraction data show that the epitaxy process forms a prevailing Cu crystal domain, which is remotely registered
Zonghuan Lu   +7 more
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Remote Epitaxy of ZnO Microrods on Graphene-Coated Substrates

ECS Meeting Abstracts, 2019
Two-dimensional nanomaterials are emerging for use as seed substrates toward transferrable, transparent, or flexible device applications.[1,2] In the van der Waals heteroepitaxy, graphene acted as seed for epitaxial overlayers of III–V or II–VI nanostructures or thin films.[3-5] Because the hydrophobic surface of graphene, given from lack of dangling
Junseok Jeong   +2 more
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(Invited) A Reconfigurable Remotely Epitaxial VO2 Electrical Heterostructure

ECS Meeting Abstracts, 2020
VO2 has been regarded as an archetypal phase transition building block with superior metal-insulator transition characteristics. However, reconfigurable VO2-based heterostructure and the associated devices are rare due to the fundamental challenge in integrating high quality VO2 in technologically important substrates.
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Study of the H2 remote plasma cleaning of InP substrate for epitaxial growth

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1996
The removal of the native oxide overlayers on the surfaces of III–V semiconductors, although widely investigated, requires further examination. Specifically, the main emphasis of research has been on the oxide layer characterization and, hence, on the development of cleaning procedures.
M Losurdo, P Capezzuto, G Bruno
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Remote epitaxial crystalline perovskites for ultrahigh-resolution micro-LED displays

Nature Nanotechnology
The miniaturization of light-emitting diodes (LEDs) is pivotal in ultrahigh-resolution displays. Metal-halide perovskites promise efficient light emission, long-range carrier transport and scalable manufacturing for bright microscale LED (micro-LED) displays.
Meng Yuan   +6 more
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Remote epitaxy and selective epitaxy on vdW materials for layer transfer

AEFM 2022 (Advanced Epitaxy for Freestanding Membranes and 2D Materials) at Cambridge, MA, US, July 6-8, 2022, 2022
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Exploring SiC CVD growth parameters compatible with remote epitaxy

Journal of Vacuum Science & Technology B
Remote epitaxy (RE) is a promising technique where monolayers of van der Waals-bonded (i.e., 2D) material act as a release layer for epitaxial film removal and substrate reuse. Epitaxial graphene (EG) grown in situ on SiC(0001) is an ideal RE substrate as it avoids damage or contamination associated with 2D material transfer.
Daniel J. Pennachio   +2 more
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