Results 21 to 30 of about 6,518 (175)
Position-controlled remote epitaxy of ZnO for mass-transfer of as-deployed semiconductor microarrays
We report the site-selective remote epitaxial growth of mechanically transferable ZnO microrod (MR) and microdisk (MD) arrays via hydrothermal growth. To designate the growth sites, a hole-patterned poly(methyl methacrylate) mask layer is formed on the ...
Dae Kwon Jin +7 more
doaj +1 more source
In situ x-ray studies of growth of complex oxides on graphene by molecular beam epitaxy
Future technologies are likely to exploit flexible heterostructures exhibiting multifunctional properties constructed from multiple materials. One technique for the synthesis of such systems relies on remote epitaxy, a method employing graphene as a ...
Xi Yan +7 more
doaj +1 more source
Defect seeded remote epitaxy of GaAs films on graphene
Abstract Remote epitaxy is an emerging materials synthesis technique which employs a 2D interface layer, often graphene, to enable the epitaxial deposition of low defect single crystal films while restricting bonding between the growth layer and the underlying substrate.
Zulqurnain, Muhammad +5 more
openaire +3 more sources
Flexible strategy of epitaxial oxide thin films
Summary: Applying functional oxide thin films to flexible devices is of great interests within the rapid development of information technology. The challenges involve the contradiction between the high-temperature growth of high-quality oxide films and ...
Jijie Huang, Weijin Chen
doaj +1 more source
Excess electron screening of remote donors and mobility in modern GaAs/AlGaAs herostructures [PDF]
In modern GaAs/Al$_x$Ga$_{1-x}$As heterostructures with record high mobilities, a two-dimensional electron gas (2DEG) in a quantum well is provided by two remote donor $\delta$-layers placed on both sides of the well.
Chen, Tianran +2 more
core +3 more sources
Thin-film  growth is a platform technique that allows the preparation of various undeveloped materials and enables the development of novel energy generation devices.
Isao Ohkubo +3 more
doaj +1 more source
High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit [PDF]
High bandwidth, uncooled, Indium Arsenide (InAs) electron avalanche photodiodes (e-APDs) with unique and highly desirable characteristics are reported. The e-APDs exhibit a 3dB bandwidth of 3.5 GHz which, unlike that of conventional APDs, is shown not to
David, John P. R. +4 more
core +1 more source
Extending device performance in photonic devices using piezoelectric properties [PDF]
This study focuses on the influence of epi-layer strain and piezoelectric effects in asymmetric GaInAs/GaAlAs action regions that potentially lead to intra-cavity frequency mixing. The theoretical limits for conduction and valence band offsets in lattice-
Triplett, Gregory Edward
core +2 more sources
Magnetoresistance Induced by Rare Strong Scatterers in a High Mobility 2DEG [PDF]
We observe a strong negative magnetoresistance at non-quantizing magnetic fields in a high-mobility two-dimensional electron gas (2DEG). This strong negative magnetoresistance consists of a narrow peak around zero magnetic field and a huge ...
Bockhorn, L. +5 more
core +3 more sources

