Results 51 to 60 of about 6,518 (175)
Covalent nitrogen doping in molecular beam epitaxy-grown and bulk WSe2
APL Materials, 2018 Covalent p-type doping of WSe2 thin films grown by molecular beam epitaxy and WSe2 exfoliated from bulk crystals is achieved via remote nitrogen plasma exposure. X-ray photoelectron and Raman spectroscopies indicate covalently bonded nitrogen in the WSe2
Ava Khosravi +7 more
doaj +1 more source
Low temperature characterization of modulation doped SiGe grown on bonded silicon-on-insulator [PDF]
, 1996 Modulation doped pseudomorphic Si0.87Ge0.13 strained quantum wells were grown on bonded silicon-on-insulator (SOI) substrates. Comparison with similar structures grown on bulk Si(100) wafers shows that the SOI material has higher mobility at low ...
Arnone, D. D. +6 more
core +1 more source
Two‐Dimensional Piezoelectric Nanomaterials for Nanoelectronics and Energy Harvesting
ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.Two‐Dimensional Piezoelectric Nanomaterials from properties to applications. Smart materials, especially piezoelectric materials, have gained popularity over the last two decades. Two‐dimensional (2D) piezoelectric materials exhibit attributes including great flexibility, ease of workability, extensive surface area, and many active sites, indicating ...
Yujun Cao +12 more
wiley +1 more source
Hole effective mass in remote doped Si/Si1−xGex quantum wells with 0.05x0.3 [PDF]
, 1994 The effective masses in remote doped Si/Si1−xGex hole quantum wells with 0 ...
A. D. Plews +11 more
core +1 more source
Advances in Gate Dielectrics for 2D Electronics
physica status solidi (RRL) – Rapid Research Letters, EarlyView.This review discusses advanced gate dielectric integration for 2D electronic devices, including layered and nonlayered dielectric materials, while highlighting strategies such as seed‐assisted ALD, transfer methods, and in situ oxidation. By focusing on interface engineering and materials innovation, new routes for scalable, high‐performance 2D ...
Moon‐Chul Jung +2 more
wiley +1 more source
Small, EarlyView.This review focuses on capability of Gallium Nitride (GaN)‐based supercapacitors, bordering the advancement from porous architecture to novel hybrid nanostructures. It systematically investigates synthesis approaches and charge storage mechanisms that generate remarkable energy densities and competent cyclic stability.
Farasat Haider +7 more
wiley +1 more source
Spectrally Tunable 2D Material‐Based Infrared Photodetectors for Intelligent Optoelectronics
Advanced Functional Materials, Volume 36, Issue 27, 2 April 2026.Intelligent optoelectronics through spectral engineering of 2D material‐based infrared photodetectors. Abstract The evolution of intelligent optoelectronic systems is driven by artificial intelligence (AI). However, their practical realization hinges on the ability to dynamically capture and process optical signals across a broad infrared (IR) spectrum.
Junheon Ha +18 more
wiley +1 more source
IEEE Access, 2019 Al0.2In0.8Sb/InAs0.4Sb0.6 heterostructures have been successfully grown on GaAs substrate by molecular beam epitaxy (MBE). The influence of three different metamorphic buffer layers on the transport properties and crystal quality of the samples has been ...
Jing Zhang +5 more
doaj +1 more source
Quantum transport in high-quality shallow InSb quantum wells
, 2019 InSb is one of the promising candidates to realize a topological state through proximity induced superconductivity in a material with strong spin-orbit interactions.
Alt, Luca +9 more
core +1 more source
Fast switching tunable laser sources for wavelength division multiplexing in passive optical access networks [PDF]
, 2007 Tunable laser structures with nanosecond switching time between wavelength channels and low-power injection locking are demonstrated on a low-cost platform.
Barry, Liam P. +10 more
core +1 more source