Results 201 to 210 of about 2,451 (213)

Role of the Electrode Material on the RESET Limitation in Oxide ReRAM Devices

Advanced Electronic Materials, 2018
Alexander Schönhals, Carlos M M Rosario, Susanne Hoffmann-Eifert   +2 more
exaly  

CACF

Transactions on Architecture and Code Optimization, 2018
Yang ­Zhang, , Wei Tong
exaly  

Switching Mechanism of TaOx ReRAM

Extended Abstracts of the 2009 International Conference on Solid State Devices and Materials, 2009
Z. Wei, Y. Kanzawa, K. Arita, Y. Katoh, S. Muraoka, S. Mitani, S. Fujii, K. Katayama, T. Ninomiya, T. Takagi   +9 more
openaire   +1 more source

Automatic ReRAM SPICE Model Generation From Empirical Data for Fast ReRAM-Circuit Coevaluation

IEEE Transactions on Very Large Scale Integration (VLSI) Systems, 2017
Sangheon Lee, Kwangmin Kim, Hyunsang Hwang   +2 more
exaly  

A Data-Driven Verilog-A ReRAM Model

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 2018
Ioannis Messaris, Alexander Serb, Spyros Stathopoulos   +2 more
exaly  

Engineering Oxygen Vacancy of Tunnel Barrier and Switching Layer for Both Selectivity and Reliability of Selector-Less ReRAM

IEEE Electron Device Letters, 2014
Sangheon Lee, Daeseok Lee, JiYong Woo
exaly  

Ni/NiO/HfO2 Core/Multishell Nanowire ReRAM Devices with Excellent Resistive Switching Properties

Advanced Electronic Materials, 2018
Jui-Yuan Chen, Yi-Hsin Ting, Wen-Wei Wu   +2 more
exaly  

Weebit Scale Reram to 28NM

New Electronics, 2021
openaire   +1 more source

Flexible and transparent ReRAM with GZO memory layer and GZO-electrodes on large PEN sheet

Solid-State Electronics, 2011
Kentaro Kinoshita, Koutoku Ohmi, S Kishida   +2 more
exaly  

A High Performance and Energy-Efficient Cold Data Eviction Algorithm for 3D-TSV Hybrid ReRAM/MLC NAND SSD

IEEE Transactions on Circuits and Systems I: Regular Papers, 2014
Chao Sun, Kousuke Miyaji, Koh Johguchi   +2 more
exaly