Results 111 to 120 of about 351,109 (298)
Laser‐Induced Graphene from Waste Almond Shells
Advanced Functional Materials, EarlyView.Almond shells, an abundant agricultural by‐product, are repurposed to create a fully bioderived almond shell/chitosan composite (ASC) degradable in soil. ASC is converted into laser‐induced graphene (LIG) by laser scribing and proposed as a substrate for transient electronics.
Yulia Steksova +9 more
wiley +1 more source
Advanced Functional Materials, EarlyView.In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
wiley +1 more source
Cluster-like resistive switching of SrTiO3:Nb surface layers
New Journal of Physics, 2013 The understanding of the resistive switching mechanisms in perovskites is of particular importance for the development of novel non-volatile memories. Nanoscale investigations recently revealed that in the model material SrTiO _3 a filamentary type of ...
C Rodenbücher +5 more
doaj +1 more source
Memory, counter-memory and resistance: notes on the ‘Greek Debt Truth Commission’ [PDF]
, 2019 This chapter seeks to understand the social and political significance of the Greek Truth Committee on the Public Debt (TCPD), a process set up by SYRIZA in June 2015 to contest the dominant ‘common sense’ of Greece’s sovereign debt. Affirming its value, this chapter analyses the TCPD as an important, strategic response to post-crash neoliberalism ...
openaire +3 more sources
Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips
Advanced Functional Materials, EarlyView.This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee +16 more
wiley +1 more source
Ultrafast switching in Ta2O5-based resistive memories
, 2016 To understand the switching mechanism in resistive switching memories it is important to study the switching kinetics over several orders in time. One open question is the upper limit of the switching speed. In this study, we present a switching kinetics
Havel, V. +20 more
core +1 more source
Advanced Functional Materials, EarlyView.Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner +14 more
wiley +1 more source
Advanced Functional Materials, EarlyView.ABSTRACT Electronic waste has emerged as a major environmental challenge, driven by the massive consumption and a limited lifetime of modern electronic devices, stimulating the development of sustainable electronics. Here, an all‐biomaterial gelatin‐choline‐citric acid ([Ch][CA]) ionogel is developed as an active binder to realize self‐sintered ...
Lin Guo +10 more
wiley +1 more source
Advanced Functional Materials, EarlyView.Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand +13 more
wiley +1 more source
Advanced ScienceMetal halide perovskites (MHPs) are considered as promising candidates in the application of nonvolatile high‐density, low‐cost resistive switching (RS) memories and artificial synapses, resulting from their excellent electronic and optoelectronic ...
Bixin Li +7 more
doaj +1 more source