Results 181 to 190 of about 351,109 (298)
Path‐decoupled III–V van der Waals memtransistors spatially separate ionic and electronic transport to overcome the conventional trade‐off between accuracy and energy in neuromorphic hardware. Mobile K+ ions in the vdW gaps set a wide conductance window, Gmax/Gmin, while gate‐tunable hole conduction lowers programming energy, enabling reliable ...
Jihong Bae +13 more
wiley +1 more source
Nanoscale Electromechanical and Conductive Properties of a Layered Two-Dimensional Hybrid Perovskite. [PDF]
Jeon HC +5 more
europepmc +1 more source
Measuring the Hall Effect in Hysteretic Materials
The authors highlight common pitfalls in measuring the Hall effect: in hysteretic magnets, improper data processing can create signals that look exotic but are not real. This Perspective explains the origin of these artifacts and presents practical measurement strategies that help researchers identify reliable Hall responses in complex magnetic ...
Jaime M. Moya +6 more
wiley +1 more source
Photo-activated digital resistive switching in a cryogenic photomemory. [PDF]
Wang J +13 more
europepmc +1 more source
Generating Unconventional Spin‐Orbit Torques With Patterned Phase Gradients in Tungsten Thin Films
ABSTRACT A key aim in spintronics is to achieve current‐induced magnetization switching via spin‐orbit torques without external magnetic fields. For this, the focus of recent work has been on introducing controlled lateral gradients across ferromagnet/heavy‐metal devices, giving variations in thickness, composition, or interface quality.
Lauren J. Riddiford +9 more
wiley +1 more source
Achieving high precision in analog in-memory computing systems. [PDF]
Mannocci P +3 more
europepmc +1 more source
Co1/3TaS2${\rm Co}_{1/3}{\rm TaS}_{2}$ hosts a triple‐Q noncoplanar antiferromagnetic state with coexisting Z3${\rm Z}_3$ electronic nematicity. We report rotational hysteresis observed in both magnetoresistance and magnetic torque, revealing strongly pinned in‐plane weak ferromagnetic moments in the triple‐Q phase and the magnetism‐driven nature of ...
Joonyoung Choi +5 more
wiley +1 more source
Ferroelectric Hafnium Oxide for In-Memory Computing: Advancing Devices, Circuit Architectures, and System-Level Integration. [PDF]
He C, Li W, Li J, Li Q, Xie Z, Du T.
europepmc +1 more source
Phase Engineering of Nanomaterials (PEN): Evolution, Current Challenges, and Future Opportunities
This review summarizes the synthesis, phase transition, advanced characterization spanning ex situ to in situ and operando techniques, and diverse applications of phase engineering of nanomaterials (PEN). It further outlines key challenges and future opportunities, such as phase stability, architecture control, and artificial intelligence (AI)‐driven ...
Ye Chen +7 more
wiley +1 more source
A Rapid-prototyping CMOS-RRAM Integration Strategy. [PDF]
Tsiamis A +2 more
europepmc +1 more source

