Results 231 to 240 of about 351,109 (298)

Ferroelectric capacitive memories: devices, arrays, and applications. [PDF]

Nano Converg
Zhou Z, Jiao L, Zheng Z, Chen Y, Han K, Kang Y, Zhang D, Wang X, Kong Q, Sun C, Xie J, Gong X.   +11 more
europepmc   +1 more source

Single‐Step Fabrication of Smart 3D Microstructures Exploiting Naphthopyrans as Photoinitiators and Photochromic Molecules

Advanced Optical Materials, EarlyView.
Naphthopyran–benzophenone compounds can act simultaneously as photoinitiators and photochromic molecules for two‐photon polymerization. Using a single‐step process, liquid photoresist is encapsulated within polymerized 3D microstructures, preserving reversible UV–vis photochromism after fabrication.
João P. Leote, Artur Andrishak, Paulo J. Coelho, José R. Fernandes, Christian Maibohm, Jana B. Nieder   +5 more
wiley   +1 more source

Effect of Electrode Tuning on the Resistive Switching Behaviour of MXene-Based Composites. [PDF]

Polymers (Basel)
Grácio M, Teixeira H, Dias C, Ventura J.   +3 more
europepmc   +1 more source

Adaptive Redox Resistive Memory Programming for Efficient and Robust Class-Incremental Learning. [PDF]

Adv Mater
Li Y, Yang J, Hou Q, Wang S, Liu S, Zhang H, Ye Z, Jiang J, Lin N, Xu X, Shang D, Qi X, Wang Z, Wang H.   +13 more
europepmc   +1 more source

Agar-Based Resistive Switching Memory for Neuromorphic Applications. [PDF]

ACS Omega
Chen HC, Kao IC, Lai KJ, Chen CY, Chang YC.   +4 more
europepmc   +1 more source

Optoelectrical Conditioning in Graphene Quantum Dot‍-‍Vanadium Oxide Artificial Synapse. [PDF]

Small Sci
Jetty P, Kundale SS, Kim YT, Lestari WA, Lee SW, Heo J, Park JH.   +6 more
europepmc   +1 more source

Gallium Oxide Memristors: A Review of Resistive Switching Devices and Emerging Applications. [PDF]

Nanomaterials (Basel)
Moore A, Hou Y, Li L.
europepmc   +1 more source

Investigation of Electron Transport Layer Influence on Asymmetric Bipolar Switching in Transparent BST-Based RRAM Devices. [PDF]

Micromachines (Basel)
Chen KH, Kao MC, Chen HC, Wang YC, Cheng CM, Xu WM.   +5 more
europepmc   +1 more source

Redox-Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges

Advanced Materials, 2009
This review article introduces resistive switching processes that are being considered for nanoelectronic nonvolatile memories. The three main classes are based on an electrochemical metallization mechanism, a valence change mechanism, and a ...
Kristof Szot, Rainer Waser, Regina Dittmann   +2 more
exaly   +2 more sources