Results 1 to 10 of about 4,276 (120)
Intrinsically Secure Non-Volatile Memory Using ReRAM Devices
IEEE Access, 2022 The paper describes a device-level encryption approach for implementing intrinsically secure non-volatile memory (NVM) using resistive RAM (ReRAM). Data are encoded in the ReRAM filament morphology, making it robust to both electrical and optical probing
Junjun Huan +5 more
doaj +1 more source
Effective Current-Driven Memory Operations for Low-Power ReRAM Applications
IEEE Access, 2023 Resistive switching (RS) devices are electronic components which exhibit a resistive state that can be adjusted to different nonvolatile levels via electrical stressing, fueling the development of future resistive memories (ReRAM) and enabling innovative
Albert Cirera +3 more
doaj +1 more source
Analysis of the Electrical ReRAM Device Degradation Induced by Thermal Cross‐Talk
Advanced Electronic Materials, 2023 A switching of resistive memory cells leads to a local accumulation of Joules heat in the device. In resistive RAM (ReRAM) arrays, the heat generated in one cell spreads via common electrode metal lines to the neighboring cells and may cause their ...
Mohammad Al‐Mamun +2 more
doaj +1 more source
Design of In-Memory Parallel-Prefix Adders
Journal of Low Power Electronics and Applications, 2021 Computational methods in memory array are being researched in many emerging memory technologies to conquer the ‘von Neumann bottleneck’. Resistive RAM (ReRAM) is a non-volatile memory, which supports Boolean logic operation, and adders can be implemented
John Reuben
doaj +1 more source
Resistive Crossbar-Aware Neural Network Design and Optimization
IEEE Access, 2020 Recent research in Non-Volatile Memory (NVM) and Processing-in-Memory (PIM) technologies has proposed low energy PIM-based system designs for high-performance neural network inference.
Muhammad Abdullah Hanif +2 more
doaj +1 more source
An Energy-Efficient Current-Controlled Write and Read Scheme for Resistive RAMs (RRAMs)
IEEE Access, 2020 Energy efficiency remains one of the main factors for improving the key performance markers of RRAMs to support IoT edge devices. This paper proposes a simple and feasible low power design scheme which can be used as a powerful tool for energy reduction ...
H. Aziza +4 more
doaj +1 more source
DESTINY: A Comprehensive Tool with 3D and Multi-Level Cell Memory Modeling Capability
Journal of Low Power Electronics and Applications, 2017 To enable the design of large capacity memory structures, novel memory technologies such as non-volatile memory (NVM) and novel fabrication approaches, e.g., 3D stacking and multi-level cell (MLC) design have been explored.
Sparsh Mittal +2 more
doaj +1 more source
IEEE Journal of the Electron Devices Society, 2018 In a human brain, our closest and very low-power information processor, one neuron transmits electrical signals depending on the electrical stimulation from other neurons.
Hisashi Shima +3 more
doaj +1 more source
A Study on the Development of Chalcogenide-based ReRAM{Resistance RAM) Device with Holographic Lithography Method [PDF]
Journal of the Korean Institute of Electrical and Electronic Material Engineers, 2009 In this study, we studied the nature of thin films formed by holographic photodoping chalcogenide thin films with for use in programmable metallization cell devices(PMC), a type of ReRAM. We formatted straight conduction pathway from the internal interferences of the diffraction gratings which is builded by the holographic lithography method.
openaire +1 more source
Results in EngineeringIn-memory computing (IMC) is a paradigm-shifting approach to data processing that eliminates the sluggishness of transferring data between memory and processing units. By integrating computation directly within the memory, IMC accelerates performance for
Mohith V, Sakthivel R
doaj +1 more source