Results 111 to 120 of about 4,276 (120)

STAGGER: Enabling All-in-One Subarray Sensing for Efficient Module-level Processing in Open-Bitline ReRAM

Design Automation Conference
Emerging resistive RAM (ReRAM) devices can in-situ execute vector-matrix-multiplication (VMM) and is able to achieve energy-efficient in-memory scientific computing.
Chengning Wang, Dan Feng, Yuchong Hu, Wei Tong, Jingning Liu   +4 more
semanticscholar   +1 more source

ReSCIM: Variation-Resilient High Weight-Loading Bandwidth In-Memory Computation Based on Fine-Grained Hybrid Integration of Multi-Level ReRAM and SRAM Cells

International Conference on Computer Aided Design
SRAM-CIM is a promising approach to implement efficient accelerator architecture as it enables accurate, energy-efficient AI computing, supporting both analog and digital computation. However, it has low area efficiency. On the other hand, Resistive RAM (
Xiaomeng Wang, Jingyu He, Kunming Shao, Jiakun Zheng, Fengshi Tian, Tim Kwang-Ting Cheng, Chi-Ying Tsui   +6 more
semanticscholar   +1 more source

Testing ReRAM-based TCAM for Computation-in-Memory Applications

2024 IEEE International Conference on Design, Test and Technology of Integrated Systems (DTTIS)
Computation in memory (CiM) can potentially mitigate the high energy and latency associated with the back-and-forth data transfer between the processor core and memory sub-systems.
Haneen G. Hezayyin, M. Mayahinia, M. Tahoori   +2 more
semanticscholar   +1 more source

FPGA Implementation of an Elementary ReRAM Memory Control Unit

International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design
The resistive RAM (ReRAM) technology is continuously attracting attention from the relevant industry who wish to exploit the potential of such technological advances in emerging applications.
Patricio Carrasco, Ioannis Vourkas
semanticscholar   +1 more source

3D resistive RAM cell design for high-density storage class memory—a review

Science China Information Sciences, 2016
B. Hudec, Chung-Wei Hsu, I-Ting Wang, W. Lai, Che-Chia Chang, Tai-Ching Wang, K. Fröhlich, C. Ho, Chen-Hsi Lin, T. Hou   +9 more
semanticscholar   +1 more source

Oxygen Distribution around Filament in Ta-O Resistive RAM Fabricated Using 40 nm CMOS Technology

International Memory Workshop, 2018
M. Arita, A. Tsurumaki‐Fukuchi, Yasuo Takahashi, Zhiqiang Wei, S. Muraoka, S. Ito, S. Yoneda   +6 more
semanticscholar   +1 more source

Sensing of Resistive RAM

Sensing of Non-Volatile Memory Demystified, 2018
Qing Yang, Bonan Yan, Hai Li
semanticscholar   +1 more source

28nm advanced CMOS resistive RAM solution as embedded non-volatile memory

IEEE International Reliability Physics Symposium, 2014
A. Benoist, S. Blonkowski, S. Jeannot, Stephane Denorme, J. Damiens, J. Berger, Philippe Candelier, E. Vianello, H. Grampeix, J. Nodin, E. Jalaguier, L. Perniola, B. Allard   +12 more
semanticscholar   +1 more source

Enabling in-situ logic-in-memory capability using resistive-RAM crossbar memory

International Conference on Field-Programmable Technology, 2016
Naifeng Jing, Taozhong Li, Zhongyuan Zhao, W. Jin, Yanan Sun, Weifeng He, Zhigang Mao   +6 more
semanticscholar   +1 more source

Overview of redox-based resistive RAM (ReRAM) – Physico-chemical background and history

openaire   +1 more source