Results 21 to 30 of about 4,276 (120)
InfoMat, EarlyView.Lead‐free inorganic halide perovskites enable resistive switching synaptic devices capable of mimicking biological learning and multimodal information processing, offering a promising platform for next‐generation neuromorphic computing and artificial intelligence hardware. Abstract Inorganic halide perovskites (IHPs) have emerged as promising materials
Subhasish Chanda +7 more
wiley +1 more source
Review of Memristors for In‐Memory Computing and Spiking Neural Networks
Advanced Intelligent Systems, Volume 8, Issue 3, March 2026.Memristors uniquely enable energy‐efficient, brain‐inspired computing by acting as both memory and synaptic elements. This review highlights their physical mechanisms, integration in crossbar arrays, and role in spiking neural networks. Key challenges, including variability, relaxation, and stochastic switching, are discussed, alongside emerging ...
Mostafa Shooshtari +2 more
wiley +1 more source
Advanced Electronic Materials, Volume 12, Issue 2, 21 January 2026.A compact neuromorphic synapse is presented, coupling anti‐ferroelectric capacitors with carbon nanotube devices to realize a non‐volatile, ternary STDP learning circuit. A calibrated compact model employs the negative differential resistance effect for ternary latching in a non‐volatile fashion.
Mohammad Khaleqi Qaleh Jooq +4 more
wiley +1 more source
The Evolution of Gas Sensors Into Neuromorphic Systems
Advanced Electronic Materials, Volume 12, Issue 2, 21 January 2026.Gas sensors are vital for various applications, but conventional designs rely on separate sensing, memory, and processing units, limiting speed, power efficiency, and adaptability. Neuromorphic gas sensing overcomes these constraints by integrating all functions in a single device.
Kevin Dominguez +4 more
wiley +1 more source
Impact of Line Resistance Combined with Device Variability on Resistive RAM Memories
, 2018 In this paper, the performance and reliability of oxide-based Resistive RAM (ReRAM) memory is investigated in a 28nm FDSOI technology versus interconnects resistivity combined with device variability.
H. Aziza, P. Canet, J. Postel-Pellerin
semanticscholar +1 more source
Energy‐Efficient Approximate Full Adders Applying Memristive Serial IMPLY Logic for Image Processing
Journal of Electrical and Computer Engineering, Volume 2026, Issue 1, 2026.Researchers and designers are facing problems with memory and power walls, considering the pervasiveness of Von Neumann architecture in the design of processors and the problems caused by reducing the dimensions of deep submicron transistors. Memristive Approximate Computing (AC) and In‐MemoryProcessing (IMP) can be promising solutions to these ...
Seyed Erfan Fatemieh +2 more
wiley +1 more source
Advanced Energy Materials, Volume 15, Issue 41, November 4, 2025.Layered halide double perovskites have emerged as promising alternatives to toxic lead‐based low‐dimensional perovskite materials for more sustainable optoelectronics. Their molecular design and its impact on the material characteristics, as well as the resulting functionality, is reviewed while discussing challenges and opportunities for future ...
Maryam Ghasemi +4 more
wiley +1 more source
Advanced Electronic Materials, Volume 11, Issue 8, June 2025.A fully back‐end‐of‐line (BEOL) compatible memristive device is proposed using an amorphous gallium oxide (a‐GaOx) film grown by plasma‐enhanced atomic layer deposition. Bipolar resistive analog switching is achieved without requiring forming and with a self‐rectifying behavior.
Onur Toprak +6 more
wiley +1 more source
Advanced Electronic Materials, Volume 11, Issue 6, May 2025.This work covers ovonic threshold switches (OTSs), from basics to developments and future outlook. It explores OTS devices incorporating various chalcogens and describes how their characteristics vary by material. Engineering strategies, including elemental doping, electrode modifications, post‐treatment, and multilayer designs, are discussed ...
Sanghyun Ban +5 more
wiley +1 more source
InfoMat, Volume 7, Issue 3, March 2025.Advancements in artificial intelligence are driving the need for highly parallel and energy‐efficient computing analogous to the human brain. In light of this, recent progresses, challenges, limitations, and future outlooks of multifunctional optoelectronic metal oxide–polymer hybrid composites‐based resistive memory devices are explored, particularly ...
Anirudh Kumar +6 more
wiley +1 more source