Results 31 to 40 of about 4,276 (120)

Ligand Substituent Effects on the Electronic Properties of Lindqvist‐Type Polyoxometalate Multi‐Level‐Switches in the Gas Phase, Solution and on Surfaces

Advanced Materials Interfaces, Volume 11, Issue 33, November 25, 2024.
Materials with tunable properties are an essential part of solving the challenges related to integrated computer memories. Metal–oxygen nanoclusters such as polyoxometalates have emerged as promising candidates for such applications, due to their unique switching properties.
Fangshun Yang, Givi Kalandia, Marco Moors, Jonas Lorenz, Markus Rohdenburg, Xue‐Bin Wang, Wenjin Cao, Mhamad Aly Moussawi, Daniela Volke, Ralf Hoffmann, Jonas Warneke, Tatjana N. Parac‐Vogt, Kirill Yu. Monakhov   +12 more
wiley   +1 more source

Improved Arithmetic Performance by Combining Stateful and Non‐Stateful Logic in Resistive Random Access Memory 1T–1R Crossbars

Advanced Intelligent Systems, Volume 6, Issue 3, March 2024.
The major candidates for read‐ and write‐based memristive computing‐in‐memory are investigated. By exploiting the active crossbar structure and the select transistor, it is possible to increase the reliability of in‐memory operations for logic and arithmetic tasks.
Leon Brackmann, Tobias Ziegler, Atousa Jafari, Dirk J. Wouters, Mehdi B. Tahoori, Stephan Menzel   +5 more
wiley   +1 more source

Designing Organic and Hybrid Surfaces and Devices with Initiated Chemical Vapor Deposition (iCVD)

Advanced Materials, Volume 36, Issue 8, February 22, 2024.
Using initiated chemical vapor deposition (iCVD), organic and hybrid thin films can form directly on substrates of virtually any composition and geometry. Free‐radical polymerization of adsorbed monomers is initiated by vapor phase radicals formed by thermal decomposition.
Karen K. Gleason
wiley   +1 more source

Nanoprobe Based Information Processing: Nanoprobe‐Electronics

Advanced Physics Research, Volume 3, Issue 2, February 2024.
Probe‐based magnetic tunnel junction (MTJ) devices are demonstrated. Spin‐polarized currents from tiny scalable size of probe tip can change the magnetization direction. Abstract With computational architectures becoming data‐centric and with the rise of in‐memory computing, the role of memory will be ever more crucial.
Bao Yi, Long You, Jeongmin Hong
wiley   +1 more source

Hiding Information for Secure and Covert Data Storage in Commercial ReRAM Chips [PDF]

IEEE Transactions on Information Forensics and Security
This article introduces a novel, low-cost technique for hiding data in commercially available resistive-RAM (ReRAM) chips. The data is kept hidden in ReRAM cells by manipulating its analog physical properties through switching (set/reset) operations ...
F. Ferdaus, B. M. S. B. Talukder, Md Tauhidur Rahman   +2 more
semanticscholar   +1 more source

The Role of Polymers in Halide Perovskite Resistive Switching Devices. [PDF]

Polymers (Basel), 2023
Thien GSH, Chan KY, Marlinda AR.
europepmc   +1 more source

ReDy: A Novel ReRAM-centric Dynamic Quantization Approach for Energy-efficient CNNs

International Conference on Parallel Processing
Deep Neural Networks (DNNs) have achieved enormous success for a large variety of applications. The primary operation in DNNs is the dot product of quantized input activations and weights.
Mohammad Sabri Abrebekoh, Marc Riera Villanueva, Antonio González   +2 more
semanticscholar   +1 more source

Compute-in-Memory for Numerical Computations. [PDF]

Micromachines (Basel), 2022
Zhao D, Wang Y, Shao J, Chen Y, Guo Z, Pan C, Dong G, Zhou M, Wu F, Wang W, Zhou K, Xue X.   +11 more
europepmc   +1 more source

Spiking CMOS-NVM mixed-signal neuromorphic ConvNet with circuit- and training-optimized temporal subsampling. [PDF]

Front Neurosci, 2023
Dorzhigulov A, Saxena V.
europepmc   +1 more source

Investigation of switching uniformity in resistive memory via finite element simulation of conductive-filament formation. [PDF]

Sci Rep, 2021
Min K, Jung D, Kwon Y.
europepmc   +1 more source