Contact Engineering Approach to Improve the Linearity of Multilevel Memristive Devices. [PDF]
Micromachines (Basel), 2021 Andreeva N +5 more
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FinFET 6T-SRAM All-Digital Compute-in-Memory for Artificial Intelligence Applications: An Overview and Analysis. [PDF]
Micromachines (Basel), 2023 Gul W, Shams M, Al-Khalili D.
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Electron tunneling between vibrating atoms in a copper nano-filament. [PDF]
Sci Rep, 2021 Al-Mamun M, Orlowski M.
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TCAD Simulation Studies on Ultra-Low-Power Non-Volatile Memory. [PDF]
Micromachines (Basel), 2023 Xu Z +5 more
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A Design Methodology for Fault-Tolerant Neuromorphic Computing Using Bayesian Neural Network. [PDF]
Micromachines (Basel), 2023 Gao D, Xie X, Wei D.
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Enhancement of Resistive and Synaptic Characteristics in Tantalum Oxide-Based RRAM by Nitrogen Doping. [PDF]
Nanomaterials (Basel), 2022 Kim D, Kim J, Kim S.
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The Memristive Properties and Spike Timing-Dependent Plasticity in Electrodeposited Copper Tungstates and Molybdates. [PDF]
Materials (Basel), 2023 Przyczyna D +6 more
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Reversible switching mode change in Ta2O5-based resistive switching memory (ReRAM). [PDF]
Sci Rep, 2020 Kim T +8 more
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A memristor fingerprinting and characterisation methodology for hardware security. [PDF]
Sci Rep, 2023 Aitchison C +3 more
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Morphology analysis of the reconstruction of nano-filaments during aborted reset operation in Cu-based ReRAM devices. [PDF]
Sci RepYasmeen S, DiFilippo A, Orlowski M.
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