Results 271 to 280 of about 84,204 (350)

A nonvolatile organic resistive switching memory based on lotus leaves

, 2018
Yiming Qi, Bai Sun, Guoqiang Fu, Tengteng Li, Shouhui Zhu, Liang Zheng, Shuangsuo Mao, Xiang Kan, Ming Lei, Yuanzheng Chen   +9 more
openalex   +2 more sources

Sensorized Engineered Tissues with Built‐in Thermoregulation and Nutrient Supply

Advanced Functional Materials, EarlyView.
This work introduces a granular hydrogel‐based tissue engineering platform that includes a closed‐loop temperature control to maintain 37°C and sustainably releases nutrients, thereby enabling cells to retain a high viability even if stored at room temperature for up to 24 h.
Antonia Georgopoulou, Jakob Schreiner, Miriam Filippi, Aiste Balciunaite, Robert K. Katzschmann, Esther Amstad   +5 more
wiley   +1 more source

Enhanced Resistive Switching and Conduction Mechanisms in Silk Fibroin-Based Memristors with Ag Nanoparticles for Bio-Neuromorphic Applications. [PDF]

Nanomaterials (Basel)
Choi J, Lee SH, Kim T, Min K, Lee SN.
europepmc   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Facile Hydrothermal Synthesis and Resistive Switching Mechanism of the α-Fe₂O₃ Memristor. [PDF]

Molecules
Yu Z, Wang Q, Jia J, Kang W, Ou M, Xu Z.
europepmc   +1 more source

Volume Contraction Upon Resistive Switching in Cr‐Doped V ₂ O ₃ as a Key Mechanism for Mottronics Applications [PDF]

Danylо Babich, Julien Tranchant, Coline Adda, B. Corraze, Marie‐Paule Besland, Peter Warnicke, Daniel Bedau, Patricia Bertoncini, Jean‐Yves Mevellec, Bernard Humbert, Jonathan D. Rupp, Tyler Hennen, Dirk J. Wouters, Roger Llopis, Laurent Cario, Étienne Janod   +15 more
openalex   +1 more source

Complexation‐Mediated Diffusion‐Limited Crystal Growth: A General Framework for Anisotropic Crystal Growth in Cu‐Based Perovskites

Advanced Functional Materials, EarlyView.
A Complexation‐Mediated Diffusion‐Limited Growth (CMDLG) framework is established to rationalize the anisotropic growth of lead‐free perovskites. Integrating coordination chemistry with mass transport kinetics, this study theoretically derives and experimentally validates that stable iodocuprate complexes induce a diffusion‐limited regime.
Hyunmin Lee, Mu Geun Son, Thanh Van Vu, Hokyeong Jeong, Joonhee Kang, Youngjong Kang   +5 more
wiley   +1 more source

Non-Volatile Resistive Switching in Nanoscaled Elemental Tellurium by Vapor Transport Deposition on Gold. [PDF]

Adv Sci (Weinh)
Ghomi S, Martella C, Lee Y, Chang PH, Targa P, Serafini A, Codegoni D, Massetti C, Gharedaghi S, Lamperti A, Grazianetti C, Akinwande D, Molle A.   +12 more
europepmc   +1 more source

Multibit Ferroelectric HfZrO Memcapacitor for Non‐Volatile Analogue Memory and Reconfigurable Electronics

Advanced Functional Materials, EarlyView.
Ferroelectric memcapacitors enable non‐volatile, voltage‐programmable capacitance tuning for adaptive electronics. A TiN/HfZrO/TiN device stack demonstrates more than eight stable capacitance states within a 24 pF memory window in compact 60 ×$\times$ 60 μm2$\umu{\rm m}^{2}$ devices at low operating voltages.
Deepika Yadav, Spyros Stathopoulos, Patrick Foster, Andreas Tsiamis, Mohamed Awadein, Hannah Levene, Themis Prodromakis   +6 more
wiley   +1 more source

BEOL‐Compatible Liquid‐Metal‐Printing of Ultrathin 2D Oxide Memtransistors and Its Applications in Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Ultrathin 2D indium oxide memtransistors are reproducibly fabricated via a scalable liquid‐metal‐printing process under ambient, low‐temperature conditions. The devices achieve robust, gate‐tunable bipolar memristive switching with high switching ratios at a BEOL‐compatible maximum processing temperature of 300°C. Governed by trap‐controlled transport,
Sanghyun Moon, Seungyun Lee, Sunghan Cho, Donggyu Lee, Jehwan Park, Seongyun Yang, Jihyun Kim   +6 more
wiley   +1 more source