Results 281 to 290 of about 1,933,006 (329)
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Humidity Effect on Resistive Switching Characteristics of the CH3NH3PbI3 Memristor.
ACS Applied Materials and Interfaces, 2021Organic-inorganic hybrid halide perovskites (OIHPs) with inherent mixed ionic-electronic conduction ability have been proposed as promising candidates for memristors with unique optoelectronic characteristics.
Xiaohan Zhang +7 more
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A complementary resistive switching neuron
Nanotechnology, 2022Abstract The complementary resistive switching (CRS) memristor has originally been proposed for use as the storage element or artificial synapse in large-scale crossbar array with the capability of solving the sneak path problem, but its usage has mainly been hampered by the inherent destructiveness of the read ...
Xinxin Wang, Huanglong Li
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Angewandte Chemie, 2021
The development of new-type memristors with special performance is of great interest. Here, an inorganic-organic hybrid crystalline polyoxometalate (POM) with usual dynamic structures is reported and used as active material for fabricating memristor with
You‐Ren Huang +6 more
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The development of new-type memristors with special performance is of great interest. Here, an inorganic-organic hybrid crystalline polyoxometalate (POM) with usual dynamic structures is reported and used as active material for fabricating memristor with
You‐Ren Huang +6 more
semanticscholar +1 more source
Oxide-Based Resistive Switching Devices: Fabrication, Influence Parameters and Applications
Journal of Materials Chemistry C, 2021In advanced computing technologies, metal oxide-based resistive switching random access memory (RRAM) has been considered an excellent scientific research interest in the area of information storage and in-memory computing.
R. Khan +8 more
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Halide Perovskites for Resistive Switching Memory.
Journal of Physical Chemistry Letters, 2021Resistive switching random access memory (RRAM), also known as memristor, is regarded as an emerging nonvolatile memory and computing-in-memory technology to address the intrinsic physical limitations of conventional memory and the bottleneck of von ...
Kaijin Kang, Wei Hu, Xiaosheng Tang
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Design of Materials Configuration for Optimizing Redox‐Based Resistive Switching Memories
Advances in Materials, 2021Redox‐based resistive random access memories (ReRAMs) are based on electrochemical processes of oxidation and reduction within the devices. The selection of materials and material combinations strongly influence the related nanoscale processes, playing a
Shaochuan Chen, I. Valov
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Switching Characteristics of Antiparallel Resistive Switches
IEEE Electron Device Letters, 2012Antiparallel resistive switches exhibit - characteristics of various types, depending on the properties of individual switches and applied compliance-current levels. When one switch is on and the other is off, an application of voltage of opposite polarity may lead to the following: 1) rupture of the first switch followed by a bridge formation in the ...
Tong Liu +3 more
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Recent Progress in Solution‐Based Metal Oxide Resistive Switching Devices
Advances in Materials, 2020Metal oxide resistive switching memories have been a crucial component for the requirements of the Internet of Things, which demands ultra‐low power and high‐density devices with new computing principles, exploiting low cost green products and ...
E. Carlos +4 more
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Nanoscale Organic Ferroelectric Resistive Switches
The Journal of Physical Chemistry C, 2014Organic ferroelectric resistive switches function by grace of nanoscale phase separation in a blend of a semiconducting and a ferroelectric polymer that is sandwiched between metallic electrodes. In this work, various scanning probe techniques are combined with numerical modeling to unravel their operational mechanism.
Khikhlovskyi, V. +5 more
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IEEE Transactions on Device and Materials Reliability, 2013
This paper reports bipolar resistive-switching (RS) characteristics and its mechanism observed from Pt/ZrN/Ti capacitors. This ZrN-based RS memory (RSM) shows excellent program/erase behavior under +3 V/10 ns and -3 V/10 ns with a high-to-low resistance ratio of > 104.
Hee-Dong Kim +4 more
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This paper reports bipolar resistive-switching (RS) characteristics and its mechanism observed from Pt/ZrN/Ti capacitors. This ZrN-based RS memory (RSM) shows excellent program/erase behavior under +3 V/10 ns and -3 V/10 ns with a high-to-low resistance ratio of > 104.
Hee-Dong Kim +4 more
openaire +1 more source