Results 21 to 30 of about 714 (176)

Bursting and excitability in neuromorphic resonant tunneling diodes [PDF]

open access: yes2021 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC), 2021
We study in this paper the dynamics of quantum nanoelectronic resonant tunneling diodes (RTDs) as excitable neuromorphic spike generators. We disclose the mechanisms by which the RTD creates excitable all-or-nothing spikes and we identify a regime of bursting in which the RTD emits a random number of closely packed spikes.
Ortega-Piwonka, Ignacio   +4 more
openaire   +3 more sources

Electrothermal Monte Carlo Simulation of a GaAs Resonant Tunneling Diode

open access: yesAxioms, 2023
This paper deals with the electron transport and heat generation in a Resonant Tunneling Diode semiconductor device. A new electrothermal Monte Carlo method is introduced. The method couples a Monte Carlo solver of the Boltzmann–Wigner transport equation
Orazio Muscato
doaj   +1 more source

Ag/SeO2/C Avalanche Type Resonant Tunneling Schottky Barriers

open access: yesMaterials Research, 2022
Herein, the design and characterization of Ag/SeO2/C avalanche type resonant tunneling devices are reported. Thin pellets of SeO2 nano-powders pressed under hydraulic pressure of 1.0 MPa which is used as the active material are characterized. They showed
Sabah E. Al Garni   +2 more
doaj   +1 more source

Enhanced current injection from a quantum well to a quantum dash in magnetic field

open access: yesNew Journal of Physics, 2014
Resonant tunneling injection is a key ingredient in achieving population inversion in a putative quantum dot cascade laser. In a quantum dot based structure, such resonant current requires a matching of the wavefunction shape in k -space between the ...
Gian L Paravicini-Bagliani   +5 more
doaj   +1 more source

An Au25-R single-molecule tidal diode induced by the asymmetrical coupling

open access: yesAIP Advances, 2022
As a basic electronic component, the diode has drawn much attention in single-molecule electronics. However, the single-molecule diode is limited to the conventional diode mode, switching to “on” with a forward voltage and to “off” whenever an opposite ...
Zewen Zuo   +9 more
doaj   +1 more source

Negative Differential Resistance of n-ZnO Nanorods/p-degenerated Diamond Heterojunction at High Temperatures

open access: yesFrontiers in Chemistry, 2020
In the present study, an n-ZnO nanorods (NRs)/p-degenerated diamond tunneling diode was investigated with regards to its temperature-dependent negative differential resistance (NDR) properties and carrier tunneling injection behaviors.
Dandan Sang   +10 more
doaj   +1 more source

Injection locking and noise reduction of resonant tunneling diode terahertz oscillator

open access: yesAPL Photonics, 2021
We studied the injection-locking properties of a resonant-tunneling-diode terahertz oscillator in the small-signal injection regime with a frequency-stabilized continuous THz wave.
Tomoki Hiraoka   +7 more
doaj   +1 more source

SPICE model of the resonant-tunnelling diode

open access: yesElectronics Letters, 1996
A SPICE3 model is developed for the resonant-tunnelling diode that combines a physical formulation of the coherent current component between zero bias and the valley point with an empirical formulation for the incoherent, or excess, current at bias voltages beyond the valley.
Brown, Elliott R.   +3 more
openaire   +1 more source

Negative Differential Resistance Behavior in Delta-Doped AlInP Structure Grown by MOCVD

open access: yesActive and Passive Electronic Components, 2002
An AlInP delta-doped schottky diode exhibiting negative differential resistance (NDR) behavior is demonstrated for the first time. The NDR characteristics with a peak to valley ratio of 5.5 and peak current density of 1KA/cm2 were achieved at room ...
K. F. Yarn
doaj   +1 more source

Design of multiple-valued RTD inverters based on switching sequence(基于开关序列的RTD多值反相器设计)

open access: yesZhejiang Daxue xuebao. Lixue ban, 2004
共振隧穿二极管(Resonant Tunneling Diode-RTD)本身所具有的负阻抗(Negative Differential Resistance-NDR)特性使其成为天然的多值器件.本文描述了RTD以及三端共振隧穿(Resonant Tunneling-RT)器件的伏安特性,介绍了元件用PSPICE软件的模拟方法,并以开关序列原理为指导思想设计出更为简洁的三值、四值反相器电路.设计出的电路具有低功耗和高速的特点,适合作为超高速大规模数字集成电路中的单元电路.
LINMi(林弥)   +2 more
doaj   +1 more source

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