Results 121 to 130 of about 3,724 (156)

Coulomb blockade of resonant tunneling

Physical Review B, 1990
Ultrasmall double-barrier semiconductor structures are investigated in terms of the semiclassical sequential theory of resonant tunneling. The quantization of the charge buildup in the quantum well is taken into account. A peaked I-V characteristic is obtained, with each peak corresponding to an integer number of electrons in the well.
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Resonant tunneling in graphene microstructures

Microelectronics Journal, 2008
We present results for the resonant electronic transmission through graphene-based single and double barriers as a function of the incident wave vector, the widths and heights of the barriers, and the separation between them. Resonant features in the transmission result from resonant electron states in the wells or hole states in the barriers and ...
Milton Pereira, J., Vasilopoulos, P., Peeters, F.M.   +2 more
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Two-dimensional resonant tunneling

Physical Review B, 1988
We have calculated the resonant-tunneling conductance for two-dimensional samples. For a disordered system, most of the resonant peaks in the conductance are Lorentzians with height less than 1 (in units of ${e}^{2}$/h), but in some special cases two resonant peaks can be very close and overlap, and the maximum conductance can be larger than 1.
, Xue, , Lee
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Nonlinear Conductance in Resonant Tunneling

Physical Review Letters, 1996
A multiterminal conductance formula describing resonant tunneling through an interacting mesoscopic system is derived and used to investigate the nonlinear conductance of a quantum dot. An explicit gauge-invariant expression for the I-V characteristic which depends sensitively on the full capacitance matrix is obtained. A voltage probe is found to have
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Resonant Tunneling in III-Nitrides

Proceedings of the IEEE, 2010
Wide-bandgap semiconductors can sustain high temperatures and high power operation in various important applications such as transistors, light-emitting diodes, and lasers. Although in embryonic stage, one can expect such a resilience in GaN resonant tunneling diodes (RTDs) and superlattices as well with distinct applications.
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Photon-assisted tunnelling in sequential resonant tunnelling devices

Semiconductor Science and Technology, 1992
The authors have investigated the influence of far infrared radiation on the tunnel current of GaAs/(GaAl)As double-barrier resonant tunnelling devices. From the analysis of the far infrared radiation response, as a function of bias voltage, for different radiation energies, an upper limit for the scattering time in the well is determined.
Chitta, V.A., Debekker, R.E.M., Maan, J.C., Hawksworth, S.J., Chamberlain, J.M., Henini, M., Hill, G.   +6 more
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Spin-Polarized Resonant Tunneling in Magnetic Tunnel Junctions

Science, 2002
Insertion of a thin nonmagnetic copper Cu(001) layer between the tunnel barrier and the ferromagnetic electrode of a magnetic tunnel junction is shown to result in the oscillation of the tunnel magnetoresistance as a function of the Cu layer thickness. The effect is interpreted in terms of the formation of spin-polarized resonant tunneling.
S, Yuasa, T, Nagahama, Y, Suzuki
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Resonant tunneling through adsorbates in scanning tunneling microscopy

Physical Review B, 1993
We present a simple model describing resonant tunneling through adsorbed molecules in scanning tunneling microscopy, extending the Newns-Anderson Hamiltonian used in chemisorption studies. The problem is viewed as a double chemisorption situation, in which various parameters depend adiabatically on the position of the adsorbate orbital of interest ...
, Gata, , Antoniewicz
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Resonant tunneling in a resistive wire

Physical Review B, 1992
Using a recently developed superposition method, we consider resonant tunneling through a double-barrier structure in a resistive wire. The wire with finite mean free path permits phase-randomizing scattering; the barriers are described by elastic scatterers. We analyze in detail the evolving residual-resistivity dipole surrounding the barriers.
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Theory of resonant tunneling in heterostructures

Physical Review B, 1988
For a parallel-plane barrier heterostructure of any form or composition, it is shown by considering the electron quantum states as functions of complex values of the energy that the full linewidth of a resonant peak in the coherent transmission probability, 2 \ensuremath{\Delta}E, and the tunneling lifetime of the quasilevel giving rise to the ...
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