Results 21 to 30 of about 1,034,106 (265)

Enhancing parameters of silicon varactors using laser gettering

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2018
The authors investigate how and why defects influence the inverse characteristics of varactors. The paper presents experimental results on the effect laser gettering has on the electrical parameters of varactors.
I. M. Vikulin, V. N. Litvinenko, S. V. Shutov, A. I. Maronchuk, A. N. Demenskiy, V. I. Glukhova   +5 more
doaj   +1 more source

Dislocation-related leakage-current paths of 4H silicon carbide

Frontiers in Materials, 2023
Improving the quality of 4H silicon carbide (4H-SiC) epitaxial layers to reduce the leakage current of 4H-SiC based high-power devices is a long-standing issue in the development of 4H-SiC homoepitaxy.
Wandong Gao, Wandong Gao, Guang Yang, Yixiao Qian, Yixiao Qian, Xuefeng Han, Xuefeng Han, Can Cui, Xiaodong Pi, Xiaodong Pi, Deren Yang, Deren Yang, Rong Wang, Rong Wang   +13 more
doaj   +1 more source

Efficient Magnetization Reversal with Noisy Currents

Physical Review Letters, 2006
We propose to accelerate reversal of the ferromagnetic order parameter in spin valves by electronic noise. By solving the stochastic equations of motion we show that the current-induced magnetization switching time is drastically reduced by a modest level of externally generated current (voltage) noise.
Wetzels, W. (author), Bauer, G.E.W. (author), Jouravlev, O.N. (author)   +2 more
openaire   +5 more sources

Current reversals in a rocking ratchet: The frequency domain [PDF]

Physical Review E, 2011
Motivated by recent work [D. Cubero et al., Phys. Rev. E 82, 041116 (2010)], we examine the mechanisms which determine current reversals in rocking ratchets as observed by varying the frequency of the drive. We found that a class of these current reversals in the frequency domain are precisely determined by dissipation-induced symmetry breaking.
Wickenbrock, Arne, Cubero Gómez, David, Abdul Wahab, N.A., Phoonthong, P., Renzoni, Ferruccio   +4 more
openaire   +5 more sources

Guidelines on the Switch Transistors Sizing Using the Symbolic Description for the Cross-Coupled Charge Pump [PDF]

Radioengineering, 2017
This paper presents a symbolic description of the design process of the switch transistors for the cross- coupled charge pump applications. Discrete-time analog circuits are usually designed by the numerical algorithms in the professional simulator ...
J. Marek, J. Hospodka, O. Subrt
doaj  

Polarized forced inverter drainage with controlled reverse-current release [PDF]

E3S Web of Conferences, 2019
To solve the problem of limiting the potential displacement of the protected structures to a very negative side, it was proposed to use a controlled release enabling passing the reverse current by direct connection of electric transport rail running on ...
Sorokendya V.S., Sorokendya O.V.
doaj   +1 more source

A simple method for accurate modeling of diode parameters

Energy Reports, 2022
Reverse saturation current of diodes is a very small value which cannot be measured with normal measurement devices. In this paper, a simple method to measure the reverse saturation current of diodes is proposed.
Farzin Asadi
doaj   +1 more source

Reversing the Sign of Current-Current Correlations [PDF]

, 2003
Current-correlations are a very sensitive probe of the fluctuations of small conductors. For non-interacting particles injected from thermal sources there is a simple connection between the sign of correlations and statistics: current-current correlations of Fermions are negative, intensity-intensity correlations of Bosons can be positive.
openaire   +3 more sources

Improvement of the reverse characteristics of Schottky diodes using gettering

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2019
The paper considers the causes and mechanisms of the influence of defects and impurities on the reverse current of the Schottky diode. The influence of two getter regions, which were created by different technologies on the working side and the reverse ...
V. Litvinenko, I. Vikulin, V. Gorbachev
doaj   +1 more source

Highly sensitive photodetector based on ge double-barrier punch-through structure

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2015
In recent years, transmission and reception systems of optical signals are widely used. Receiving the optical signal in such systems is carried by photoreceiving modules based on a photodetector, which defines the quality of the received signal, the ...
O. A. Abdulkhaev, D. M. Yodgorova, A. V. Karimov, S. M. Kuliyev   +3 more
doaj   +1 more source