Results 21 to 30 of about 2,672,892 (299)
Hot-carrier-induced deep-level defects from gated-diode measurements on MOSFETs [PDF]
, 1990 The reverse-bias current in the gated-diode configuration of hot-carrier degraded MOS devices was measured. It is shown that interface defects created by the degradation contribute predominantly to the generation current.
Asenov, A. +4 more
core +1 more source
Feasible protection strategy for HVDC system by means of SFCL and passive resonance DC breaker
The Journal of Engineering, 2019 The key obstacle in implementing high-voltage direct current (HVDC) grid, which is considered as the future of power grid, is the absence of effective DC circuit breaker (DCCB). At present, HVDC grid could be based on half-bridge (HB) or full-bridge (FB)
Ho-Yun Lee +3 more
doaj +1 more source
Dislocation-related leakage-current paths of 4H silicon carbide
Frontiers in Materials, 2023 Improving the quality of 4H silicon carbide (4H-SiC) epitaxial layers to reduce the leakage current of 4H-SiC based high-power devices is a long-standing issue in the development of 4H-SiC homoepitaxy.
Wandong Gao +13 more
doaj +1 more source
Current reversals in a rocking ratchet: The frequency domain [PDF]
Physical Review E, 2011 Motivated by recent work [D. Cubero et al., Phys. Rev. E 82, 041116 (2010)], we examine the mechanisms which determine current reversals in rocking ratchets as observed by varying the frequency of the drive. We found that a class of these current reversals in the frequency domain are precisely determined by dissipation-induced symmetry breaking.
Wickenbrock, Arne +4 more
openaire +5 more sources
Enhancing parameters of silicon varactors using laser gettering
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2018 The authors investigate how and why defects influence the inverse characteristics of varactors. The paper presents experimental results on the effect laser gettering has on the electrical parameters of varactors.
I. M. Vikulin +5 more
doaj +1 more source
Polarized forced inverter drainage with controlled reverse-current release [PDF]
E3S Web of Conferences, 2019 To solve the problem of limiting the potential displacement of the protected structures to a very negative side, it was proposed to use a controlled release enabling passing the reverse current by direct connection of electric transport rail running on ...
Sorokendya V.S., Sorokendya O.V.
doaj +1 more source
Efficient Magnetization Reversal with Noisy Currents
Physical Review Letters, 2006 We propose to accelerate reversal of the ferromagnetic order parameter in spin valves by electronic noise. By solving the stochastic equations of motion we show that the current-induced magnetization switching time is drastically reduced by a modest level of externally generated current (voltage) noise.
Wetzels, W. (author) +2 more
openaire +5 more sources
Guidelines on the Switch Transistors Sizing Using the Symbolic Description for the Cross-Coupled Charge Pump [PDF]
Radioengineering, 2017 This paper presents a symbolic description of the design process of the switch transistors for the cross- coupled charge pump applications. Discrete-time analog circuits are usually designed by the numerical algorithms in the professional simulator ...
J. Marek, J. Hospodka, O. Subrt
doaj
Fabrication and characterization of the charge-plasma diode [PDF]
, 2010 We present a new lateral Schottky-based rectifier called the charge-plasma diode realized on ultrathin silicon-oninsulator. The device utilizes the workfunction difference between two metal contacts, palladium and erbium, and the silicon body.
Hemert, T. van +5 more
core +2 more sources
A simple method for accurate modeling of diode parameters
Energy Reports, 2022 Reverse saturation current of diodes is a very small value which cannot be measured with normal measurement devices. In this paper, a simple method to measure the reverse saturation current of diodes is proposed.
Farzin Asadi
doaj +1 more source