Results 281 to 290 of about 3,886,976 (355)

Current-Collapse-Free and Fast Reverse Recovery Performance in Vertical GaN-on-GaN Schottky Barrier Diode

IEEE transactions on power electronics, 2019
The recent emergence of free-standing GaN substrate has enabled the development of vertical GaN-on-GaN power devices. This letter presents the dynamic on-resistance ($R_{\text{ON}}$) and reverse recovery performance of a novel vertical GaN-on-GaN ...
Shaowen Han, Shu Yang, Rui Li, Xinke Wu, Kuang Sheng   +4 more
semanticscholar   +1 more source

A trench/planar SiC MOSFET integrated with SBD (TPSBD) for low reverse recovery charge and low switching loss

Semiconductor Science and Technology, 2020
In this paper, with Sentaurus TCAD simulation, the trench/planar MOSFET (TPMOS) shows a much lower electric field in gate oxide and a smaller gate charge than the traditional trench MOSFET (TMOS) and commercial double trench MOSFET (DTMOS).
Zhonglin Han, Yun Bai, Hong Chen, Chengzhan Li, Jiang Lu, G. Song, Xinyu Liu   +6 more
semanticscholar   +1 more source

Superjunction MOSFET With Dual Built-In Schottky Diodes for Fast Reverse Recovery: A Numerical Simulation Study

IEEE Electron Device Letters, 2019
A new superjunction MOSFET (SJ-MOSFET) architecture with dual built-in Schottky diodes is proposed and studied with the numerical TCAD simulations. This letter is based on silicon.
Jin Wei, Meng Zhang, Huaping Jiang, Xianda Zhou, Baikui Li, K. J. Chen   +5 more
semanticscholar   +1 more source

Metal recovery from reverse osmosis concentrate

Journal of Cleaner Production, 2009
Abstract The use of reverse osmosis (RO) membranes is becoming increasingly common in desalination plants, though disposal of the highly concentrated brines poses significant environmental risks. The targeted extraction of some metals from the concentrate can have multiple environmental and economic benefits. This is particularly apparent with recent
Jeppesen, T., Shu, L., Keir, G., Jegatheesan, V.   +3 more
openaire   +2 more sources

Fabrication of a 650V Superjunction MOSFET With Built-in MOS-Channel Diode for Fast Reverse Recovery

IEEE Electron Device Letters, 2019
In this letter, a 650V superjunction (SJ) MOSFET with a built-in MOS-channel diode for fast reverse recovery is proposed and fabricated. Simulations on the new device via Sentaurus TCAD are first made.
Zhi-Yuan Ye, Lei Liu, Yao Yao, Min-Zhi Lin, Peng-Fei Wang   +4 more
semanticscholar   +1 more source

Shower Water Recovery by Reverse Osmosis

SAE Technical Paper Series, 1987
<div class="htmlview paragraph">Boeing Aerospace Company (BAC) is currently supporting studies in non-phase change methods for recovering wash water generated by space vehicle crews. The reverse osmosis technology appears to be promising for this application.
Thomas J. Slavin, Hans H. Peters, Tuan Q. Cao   +2 more
openaire   +1 more source

Diode Reverse Recovery Process and Reduction of a Half-Wave Series Cockcroft–Walton Voltage Multiplier for High-Frequency High-Voltage Generator Applications

IEEE transactions on power electronics, 2019
This paper investigates the diode reverse recovery process and reduction of a half-wave (HW) series Cockcroft–Walton (CW) voltage multiplier based on the steady-state analysis for high-frequency high-voltage (HV) generator applications. The diode reverse
Saijun Mao, J. Popovic, J. Ferreira
semanticscholar   +1 more source

Eelgrass recovery after nutrient enrichment reversal

Aquatic Botany, 2010
Abstract Mumford Cove, a 48 ha Connecticut embayment on Long Island Sound, has a history of excessive nutrient inputs and corresponding eutrophic conditions with concomitant eelgrass ( Zostera marina L.) loss. From 1945 to 1987, a municipal wastewater treatment facility discharged into the cove.
Vaudrey, Jamie M. P., Kremer, James N., Branco, Brett F., Short, Frederick T.   +3 more
openaire   +2 more sources

A THz Pulse Radiator Based on PIN Diode Reverse Recovery

BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, 2019
This paper presents a fully integrated oscillator-less THz pulse radiator based on reverse recovery of a PIN diode implemented using 130-nm SiGe BiCMOS technology.
Sam Razavian, A. Babakhani
semanticscholar   +1 more source

Prediction of PIN diode reverse recovery

2004 IEEE 35th Annual Power Electronics Specialists Conference (IEEE Cat. No.04CH37551), 2004
Generally, the reverse recovery issue of diode is difficult to deal with, which causes large added loss and EMI. Different down slopes for diode reverse voltage mean different working conditions, and this paper shows you the general concept with different down slopes and how to predict the reverse recovery current to calculate the relative switching ...
null Yueqing Wang, null Qingyou Zhang, null Jianping Ying, null Chaoqun Sun   +3 more
openaire   +1 more source