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IEEE transactions on power electronics, 2018
In this paper, a method is proposed to investigate the dc-link current and voltage ripple calculations in voltage source inverters by considering the reverse recovery of the antiparallel diodes.
Jing Guo, Jin Ye, A. Emadi
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In this paper, a method is proposed to investigate the dc-link current and voltage ripple calculations in voltage source inverters by considering the reverse recovery of the antiparallel diodes.
Jing Guo, Jin Ye, A. Emadi
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Reverse recovery time reworking of fast recovery diodes for industrial production
2015 International Symposium on Next-Generation Electronics (ISNE), 2015For industrial field, cost is one of the most important factors. Especially discrete devices like a fast recovery diodes which are produced by complicated processes. In case of over t rr defect, reworking is required to limit the cost which is increased.
W. Itthikusumarn +2 more
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High-Recovery Low-Pressure Reverse Osmosis
SAE Technical Paper Series, 1992<div class="htmlview paragraph">Membrane performance parameters have been obtained for high water recovery operation in the pressure range up to 1.4 MPascals (200 psig) for system modeling. Simple equations can be fitted to these measurements, from which RO system performance can be predicted or simulated as part of a model of system performance.&
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A snapback suppressed reverse-conducting IGBT with soft reverse recovery characteristic
Superlattices and Microstructures, 2013Abstract A reverse-conducting insulated-gate bipolar transistor (RC-IGBT) featuring floating P-region (P-float) embedded in the n-buffer layer is proposed. The P-float plays three roles at different working conditions. Firstly, it introduces a barrier in the n-buffer to obstruct the electron current from flowing directly to the n-collector at small ...
Weizhong Chen +5 more
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European Conference on Cognitive Ergonomics, 2018
In the quest for higher power density in switching converters, the use of SiC MOSFETs provides increased switching speed, which allows higher switching frequencies and smaller filtering elements.
Soheila Eskandari +3 more
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In the quest for higher power density in switching converters, the use of SiC MOSFETs provides increased switching speed, which allows higher switching frequencies and smaller filtering elements.
Soheila Eskandari +3 more
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Seawater reverse osmosis with energy recovery
Desalination, 1982The Porto Santo seawater reverse osmosis plant has been designed to provide per day 500 m3 of potable water with a total dissolved solids content of 500 ppm from seawater with a total dissolved solids content of abt. 34000 ppm. The plant consists of four independent units with an output of 125 m3 per day each.
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IEEE transactions on power electronics, 2018
The boundary conduction mode (BCM) totem-pole boost power factor correction (PFC) topology is becoming popular in high-efficiency and high power density applications because of its advantages of fewer devices and low conduction losses.
Chenkai Zhao, Xinke Wu
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The boundary conduction mode (BCM) totem-pole boost power factor correction (PFC) topology is becoming popular in high-efficiency and high power density applications because of its advantages of fewer devices and low conduction losses.
Chenkai Zhao, Xinke Wu
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Low-Reverse Recovery Charge Superjunction MOSFET With a p-Type Schottky Body Diode
IEEE Electron Device Letters, 2017A novel low-reverse recovery charge superjunction MOSFET (SJ-MOSFET) with a p-type Schottky body diode is proposed in this letter. The device has a p-type Schottky contact on the p-pillar at the drain side. Electrons are prevented from injecting into the
Zhi Lin +4 more
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Accurate Estimation of Diode Reverse-Recovery Characteristics From Datasheet Specifications
IEEE transactions on power electronics, 2018This letter proposes a structured approach for accurate estimation of diode reverse-recovery characteristics using datasheet specifications. Considering a conductance model of a diode, the entire reverse-recovery process is divided into four operating ...
Utsab Kundu, P. Sensarma
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