Results 211 to 220 of about 21,578 (263)

Phase-change RF switches with robust switching cycle endurance

2018 IEEE Radio and Wireless Symposium (RWS), 2018
We report on the first SbTe phase-change material RF switches with a refractory TiW heater in a planar configuration. With the planar layout and heater reliability, a record switching cycle endurance of >300K was demonstrated. With on-state resistance of 0.5 ohm∗mm and off-state capacitance of 75 fF/mm, the RF switch figure-of-merit (FOM) is 4.1 THz ...
Jeong-Sun Moon, Hwa-change Seo, Kyung-ah Son, Kangmu Lee, Daniel Zehnder, Haw Tai, Dustin Le   +6 more
openaire   +1 more source

RF MEMS switch for Reconfigurable RF-Front End with Improved Hot-Switching Capabilities

2018 IEEE International Symposium on Antennas and Propagation & USNC/URSI National Radio Science Meeting, 2018
This paper reviews the authors' past work on how to improve the hot-switching reliability for RF MEMS switch. Two methods have been proposed to improve the hot-switching reliability. The first method is to place a refractory sacrificial metal contact in parallel with the main low-resistance switch contact. The sacrificial contact will be actuated first
Yuhao Liu, Jiansong Liu, Bo Yu, M. Naimul Hasan, Xiaoguang Liu   +4 more
openaire   +1 more source

An amorphous semiconductor RF switch

Proceedings of the IEEE, 1971
Switching of an RF signal at 300 MHz by an amorphous semiconductor is reported. The material is Si 3 Ge 4 As 38 Te 55 , cut into a 1 mm3sample. Switching is accomplished by application of a 300-V pulse, with switching times less than 1 µs observed.
J.L. Stone, W.A. Porter, J.S. Linder, C.R. Haden   +3 more
openaire   +1 more source

Simmwic Capacitive RF Switches

29th European Microwave Conference, 1999, 1999
Capacitive RF metal membrane switches have been fabricated on pyrex and high-resistivity silicon wafer using CPW transmission lines and a modified air-bridge technology. Actuation voltage down to 25 V has been achieved. The switches exhibit low loss (
K. M. Strohm, C. N. Rheinfelder, A. Schurr, J.-F. Luy   +3 more
openaire   +1 more source

GaAs FET RF switches

IEEE Transactions on Electron Devices, 1985
The device parameter dependences of GaAs FET switch performance have been determined analytically and by two-dimension simulation. FET switch design would maximize the value of the switch quality factor while retaining the power handling capacity.
A. Gopinath, J.B. Rankin
openaire   +1 more source

Novel RF MEMS Switches

2007 Asia-Pacific Microwave Conference, 2007
This paper reviews three novel RF MEMS ohmic contact switches, each being designed for specific applications. All three were developed at Imperial College London. The first is a packaged single-pole double throw (SPDT) version intended for space applications, operating from DC to 6 GHz; the second is a single-pole single throw (SPST) switch for high ...
S. Lucyszyn, S. Pranonsatit, J. Y. Choi, R. W. Moseley, E. M. Yeatman, A. S. Holmes   +5 more
openaire   +1 more source

RF MEMS piezoelectric switch

61st Device Research Conference. Conference Digest (Cat. No.03TH8663), 2004
In this paper discussed about the fabrication PbZrTiO/sub 3/ film for switch. This fabricated switches were tested and resonance frequency measurements also carried out.
S.J. Gross, Q.Q. Zhang, S. Trolier-McKinstry, S. Tadigadapa, T.N. Jackson   +4 more
openaire   +1 more source

Design of Micromachined RF Switch

1999 29th European Microwave Conference, 1999
The switch contact design of mechanical micromachined switches on the standpoint of the tradeoff between the return loss in the "On" state and the isolation in the "Off" state is discussed. The electrical characteristics of the switch fabricated on a glass substrate were measured from 1GHz to 30GHz.
Shuguang Chen, Kenichiro Suzuki, Tsunehisa Marumoto, Youichi Ara, Ryuichi Iwata   +4 more
openaire   +1 more source

Contactless Switching of a RF CBRAM Switch

2023 XXXVth General Assembly and Scientific Symposium of the International Union of Radio Science (URSI GASS), 2023
Daisuke Kobuchi, Romain Siragusa, Yoshiaki Narusue, Arnaud Vena, Etienne Perret   +4 more
openaire   +1 more source

The RF Characteristics of the RF MEMS Switch as the Substrate Resistivity

2008 Global Symposium on Millimeter Waves, 2008
This paper presents the RF characteristics of the RF MEMS switch as the silicon substrate resistivity. The larger the resistivity of silicon substrate is, the larger the insertion loss of the RF MEMS switch is. When the RF MEMS switch is fabricated with the single crystalline silicon, the RF characteristics are changed by resistivity of silicon.
S. Kang, S. Park, H. C. Kim, K. Chun
openaire   +1 more source