Results 191 to 200 of about 852,932 (297)

Prompt Engineering Accelerates the Data‐Driven Discovery of Photocatalysts via an LLM‐Based Model Ensemble Strategy

Advanced Science, EarlyView.
This work establishes a pipeline that transforms fragmented literature into a structured database for graphitic carbon nitride photocatalyst discovery. A prompt‐engineered, cross‐model large language model ensemble automates high‐fidelity extraction, enabling interpretable machine learning to identify dominant performance descriptors. These data‐driven
Dianyuan Li, Xichen Sun, Shaohua Sun, Runzhou Wang, Miaomiao Zhang, Meng Xiao, Yue Wang, Yuezhou Zhang   +7 more
wiley   +1 more source

Peroxidase‐Mimicking Nanozymes for Rapid Detection of Infectious Diseases

Advanced Science, EarlyView.
Peroxidase‐mimicking nanozymes (PMNs) have emerged as robust and versatile materials for rapid infectious disease diagnostics. This review highlights the rational design and controlled synthesis of PMNs, summarizes key biomarkers relevant to infectious diseases, examines their integration into diverse rapid detection platforms, and highlights ...
Shikuan Shao, Victor Fernandez‐Gonzalez, Xiaochuan Wang, Blake Pylipow, Claudia Herrera, Xiaohu Xia   +5 more
wiley   +1 more source

Nanozymes for Liver Disease Therapy: Advances in Catalytic Activity, Targeting Strategies, and Clinical Translation

Advanced Science, EarlyView.
Nanozymes, as enzyme‐mimicking nanomaterials, exhibit unique catalytic properties for the treatment of liver diseases. By regulating redox homeostasis, modulating immune responses, and enabling targeted delivery, nanozymes overcome the limitations of natural enzymes.
Xiandi Meng, Ge Zhu, Siyu Sun, Wenbo Yao, Yuning Zhang, Yong‐Guang Yang, Tianmeng Sun   +6 more
wiley   +1 more source

Diffusion Characteristics of Ru and Oxygen Vacancies in Ta2O5 for Resistive Random Access Memory Devices: A Density Functional Theory Investigation

Advanced Electronic Materials, EarlyView.
Atomistic analysis of ruthenium (Ru) and oxygen vacancy (OV) diffusion in Ta₂O₅‐based memristors is performed. DFT calculations demonstrate interstitial Ru in Ta₂O₅ has lower diffusion barriers and formation energies than OVs, enhancing mobility and stability.
Md. Sherajul Islam, Sabyasachi Ganguli, J. Joshua Yang, Ajit K Roy   +3 more
wiley   +1 more source

Organic Thin‐Film Transistors for Neuromorphic Computing

Advanced Electronic Materials, EarlyView.
Organic thin‐film transistors (OTFTs) are reviewed for neuromorphic computing applications, highlighting their power‐efficient, and biological time‐scale operation. This article surveys OFET and OECT devices, compares them with memristors and CMOS, analyzes how fabrication parameters shape spike‐based metrics, proposes standardized characterization ...
Luke McCarthy, Mohan V. Jacob, Mostafa Rahimi Azghadi   +2 more
wiley   +1 more source

Role Stressors and Job Performance: An Empirical Investigation in Malaysia

The South East Asian Journal of Management, 2016
Aizzat Mohd. Nasurdin, Soon Lay Khuan
doaj   +1 more source

Terahertz Channel Modeling, Estimation and Localization in RIS‐Assisted Systems

Advanced Electronic Materials, EarlyView.
Reconfigurable intelligent surfaces have become a recent intensive research focus. Based on practical applications, channel strategies for RIS‐assisted terahertz wireless communication systems are categorized into three different types: channel modeling, channel estimation, and channel localization.
Hongjing Wang, Weipeng Wang, Xuan Cong, Shiyu Wang, Gao Li, Sen Gong, Lin Huang, Hongxin Zeng, Yaxin Zhang, Ziqiang Yang   +9 more
wiley   +1 more source

Topological Materials and Related Applications

Advanced Electronic Materials, EarlyView.
This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti, Roberto Mantovan, Emanuele Longo, Harold J. W. Zandvliet, Pantelis Bampoulis, Yu Pan, Fan Li, Xia Wang, Payton Downey, Alessandro Molle   +9 more
wiley   +1 more source

Wafer‐Scale Split‐Channel a‐IGZO TFTs for Hump‐Free and Stress‐Robust Operation

Advanced Electronic Materials, EarlyView.
This work identifies plasma‐induced edge region oxygen vacancies as the true origin of the hump in a‐IGZO TFTs and introduces a wafer‐scale split‐channel architecture that fully suppresses this instability. The simple mask‐level design achieves hump‐free and stress‐robust operation with significantly enhanced current drivability, offering a practical ...
So‐Jeong Park, Hyo‐In Yang, Yongwoo Lee, Hanbin Lee, Jeong Yeon Im, Dae Hwan Kim, Yoon Jung Lee, Min‐Ho Kang, Sung‐Jin Choi   +8 more
wiley   +1 more source