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Compliance-free, analog RRAM devices based on SnOx. [PDF]
Sci RepGarlapati SK +5 more
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Efficient memristor accelerator for transformer self-attention functionality. [PDF]
Sci RepBettayeb M +4 more
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Gallium Oxide Memristors: A Review of Resistive Switching Devices and Emerging Applications. [PDF]
Nanomaterials (Basel)Moore A, Hou Y, Li L.
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Proceedings of the 26th edition on Great Lakes Symposium on VLSI, 2016
RRAM-based memory is a promising emerging technology for both on-chip and stand-alone non-volatile data storage in advanced technologies. In addition to its small dimensions, the RRAM device has many technological advantages including its low-programming voltages, high speed, low power, CMOS-compatible fabrication process, and potentially monolithic 3D
Amr M.S. Tosson, Mohab Anis, Lan Wei
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RRAM-based memory is a promising emerging technology for both on-chip and stand-alone non-volatile data storage in advanced technologies. In addition to its small dimensions, the RRAM device has many technological advantages including its low-programming voltages, high speed, low power, CMOS-compatible fabrication process, and potentially monolithic 3D
Amr M.S. Tosson, Mohab Anis, Lan Wei
openaire +1 more source
Symposium Non-Volatile Memory Technology 2005., 2006
The property of PCMO RRAM memory resistors have been studied in terms of electrical pulse width, temperature dependent of resistance, trap state, and electrode effects. The PCMO material is deposited using MOD, PVD, or PLD process. The MOD PCMO is a small grain polycrystal material.
S.T. Hsu +6 more
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The property of PCMO RRAM memory resistors have been studied in terms of electrical pulse width, temperature dependent of resistance, trap state, and electrode effects. The PCMO material is deposited using MOD, PVD, or PLD process. The MOD PCMO is a small grain polycrystal material.
S.T. Hsu +6 more
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Proceedings of the IEEE, 2012
In this paper, recent progress of binary metal-oxide resistive switching random access memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical characteristics of a variety of binary metal-oxide RRAM are discussed, with a focus on the use of RRAM for nonvolatile memory application.
H.-S. Philip Wong +8 more
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In this paper, recent progress of binary metal-oxide resistive switching random access memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical characteristics of a variety of binary metal-oxide RRAM are discussed, with a focus on the use of RRAM for nonvolatile memory application.
H.-S. Philip Wong +8 more
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Three-Dimensional Vertical RRAM
2021This chapter provides a comprehensive review on the progress achieved concerning Three-Dimensional (3D) vertical resistive random access memory (VRRAM). Compared with 3D X-point structure, the 3D VRRAM exhibits several advantages. A self-rectifying device is one type of self-selective RRAM cell, working similarly as a combination of diode and resistive
Qing Luo, Ming Liu
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Materials Today, 2019
Abstract Resistance random-access memory (RRAM) is a promising candidate for both the next-generation non-volatile memory and the key element of neural networks. In this article, different types of Mott-transition (the transition between the Mott insulator and metallic states) mechanisms and Mott-transition-based RRAM are reviewed.
Yue Wang +8 more
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Abstract Resistance random-access memory (RRAM) is a promising candidate for both the next-generation non-volatile memory and the key element of neural networks. In this article, different types of Mott-transition (the transition between the Mott insulator and metallic states) mechanisms and Mott-transition-based RRAM are reviewed.
Yue Wang +8 more
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Intelligent Computing with RRAM
2019 IEEE 11th International Memory Workshop (IMW), 2019RRAM-based in-memory-computing is a promising approach to go beyond von Neumann architecture and attributes to remarkable improvement in power efficiency and performance density. In this work, we examine our developments in device optimization for high-linearity SET/RESET updating and analyze the device reliability issues.
Peng Yao +7 more
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Advanced Simulation of RRAM Memory Cells
2019 IEEE 13th International Conference on ASIC (ASICON), 2019Resistive random-access memories (RRAMs) are overwhelmingly viewed as potential candidates for the next generation of non-volatile memory devices. Here, we discuss the advantages of the kinetic Monte Carlo (KMC) simulation framework for RRAMs. We use a robust KMC simulator to analyze transport in promising oxide structures.
Badami, Oves +5 more
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