Results 191 to 200 of about 1,218 (262)

Exploring Thermally Conductive and Form-Stable Phase Change Composites: A Review of Recent Advances and Thermal Energy Applications. [PDF]

Materials (Basel)
Guo H, Hu B, Shan H, Yang X.
europepmc   +1 more source

Flame Suppression in Lithium‐Ion Batteries During Thermal Runaway Through Solvent Design Considering the Volatility–Flammability Relationship

Advanced Science, EarlyView.
An asymmetric sulfonate solvent forms thermally stable interphases and demonstrates non‐flammability, suppressing heat accumulation for safer, high‐performance lithium‐ion batteries. ABSTRACT An asymmetric sulfonate‐based linear solvent, 2,2,2‐trifluoromethyl mesylate (FMS), is designed and used as the primary solvent in liquid electrolytes to enhance ...
Chi‐Yeong Hong, Joon Ha Chang, Ho Yeon Jang, Jooeun Byun, Chae Rim Lee, Jeongmin Kim, Oh B. Chae, Youngjin Kim, Jun Ho Song, Chihyun Hwang, Seoin Back, Ki Jae Kim, Hyun‐seung Kim   +12 more
wiley   +1 more source

Anion Chemistry: Structure, Electrochemistry and Stability of NASICON Cathodes. [PDF]

Nanomicro Lett
Cai T, Yu D, Zhang X, Zhao S, Wang L.
europepmc   +1 more source

Emerging Memory and Device Technologies for Hardware‐Accelerated Model Training and Inference

Advanced Electronic Materials, EarlyView.
This review investigates the suitability of various emerging memory technologies as compute‐in‐memory hardware for artificial intelligence (AI) applications. Distinct requirements for training‐ and inference‐centric computing are discussed, spanning device physics, materials, and system integration.
Yoonho Cho, Dae‐won Kim, Yujin Kim, Jung‐Heum Na, Yuwon Jeong, Dong‐Yeop Lee, Shinhyun Choi   +6 more
wiley   +1 more source

Influence of cathode materials on thermal characteristics of lithium-ion batteries. [PDF]

Front Chem
Yuan Y, Ma Q, Zhang X, Zhang F, Song X, Xin H, Zhu G, Zhang H.   +7 more
europepmc   +1 more source

The Influence of Residual Ion Drift During Programming of Chip‐Integrated Nanoscale HfO2‐Based Memristive Devices

Advanced Electronic Materials, EarlyView.
1T1R‐arrays combining filamentary‐type memristors and CMOS transistors offer great potential for energy‐efficient analog hardware accelerators. Here, transient SET analysis of nanoscale HfO2 memristors integrated on 180 nm CMOS wafers is discussed.
Oliver Artner, Felix Cüppers, Seokki Son, Yang Chen, Xiaohua Liu, Christopher Bengel, Dennis Nielinger, André Zambanini, Stefan Wiefels, Stephan Menzel, Regina Dittmann, Susanne Hoffmann‐Eifert   +11 more
wiley   +1 more source

Research on the Degradation and Failure Mechanisms of the Unclamped-Inductive-Switching Characteristics of p-GaN HEMT Devices. [PDF]

Micromachines (Basel)
Liu L, Zhen Y, Li S, Pang B, Zeng K.
europepmc   +1 more source

Controlling Self‐Doping in Conjugated Polyelectrolyte Copolymers to Vary the Threshold Voltage in OECTs

Advanced Electronic Materials, EarlyView.
Two series of self‐doped conjugated polyelectrolytes are synthesized from a non‐self‐dopable building block 3MEEET and a self‐dopable building‐block 3HOT−[TMA+] or 3HOT−[SO3H] enabling precise control over the degree of self‐doping, which in turn directly governs the threshold voltage (VT) in OECTs over a wide range of 700 mV.
Julian Hungenberg, Andreas W. Erhardt, Adrian Hochgesang, John Mohanraj, Lys Sprenger, Sahar Salehi, Christopher R. McNeill, Mukundan Thelakkat   +7 more
wiley   +1 more source

Chance and purpose in the evolution of biospheres. [PDF]

Philos Trans R Soc Lond B Biol Sci
Donoghue PCJ, Lenton TM, Okasha S, Shields GA, Spang A.   +4 more
europepmc   +1 more source

Relativistic runaway electrons in tokamak plasmas

, 1995
openaire   +2 more sources