Results 161 to 170 of about 5,622 (217)

A minimal cellulosome‐like system in Cellulosilyticum lentocellum

FEBS Open Bio, EarlyView.
Cellulose‐degrading bacteria typically use cellulosomes, large multi‐enzyme complexes on a scaffold protein. In Cellulosilyticum lentocellum, we characterise a far smaller arrangement, a single scaffold bound to one cellulase through a single cohesin‐dockerin interaction.
John Allan, Amias Alstrom‐Moore, Gary W Black   +2 more
wiley   +1 more source

Risk Prediction Models for Recurrence After Curative Treatment of Early‐Stage or Locally Advanced Lung Cancer: A Systematic Review

Aging and Cancer, EarlyView.
This systematic review synthesizes prognostic models for survival and recurrence in resected non‐small cell lung cancer. While many models demonstrate moderate to good discrimination, few are externally validated and reporting quality is variable, limiting clinical applicability and highlighting the need for robust, transparent model development ...
Evangeline Samuel, S. Tissera, E. Paul, J. Zalcberg, R. G. Stirling   +4 more
wiley   +1 more source

Chronobiology of Cancer: How Aging Fuels Oncogenesis at the Molecular Level

Aging and Cancer, EarlyView.
This graphical abstract illustrates the key biological pathways linking aging with cancer development and progression. In the upper left, cumulative exposure to ultraviolet radiation, toxins, and reactive oxygen species (ROS) causes DNA damage and genomic instability, whereas age‐related decline in repair mechanisms, such as ATM/ATR, BER, and NER ...
Anu Singh, Aroonima Misra, Sufian Zaheer
wiley   +1 more source

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S-parameter simulation with a new MOSFET model

2000 Asia-Pacific Microwave Conference. Proceedings (Cat. No.00TH8522), 2002
This paper presents a new MOSFET model, which has been implemented in SPICE3f4 for verification and testing. The DC and S-parameters of a MOSFET are measured and simulated. Simulations performed with the new model agree well with measurements.
null Guoli Qu, A.E. Parker
openaire   +1 more source

S-parameter models for transient simulation in Verilog-A

Proceedings of the 2013 9th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), 2013
This work presents a new method to model analog modules for transient simulations with their S-parameters and DC behavior. The model can be used for verification of analog circuits in a system simulation where the modeling is necessary to speed up transient simulations in analog domain for systems like Sigma Delta modulators (SDM) or DC/DC converters ...
Tobias Maier, Dirk Droste, Michael Siegel   +2 more
openaire   +1 more source

Multipole and S-Parameter Antenna and Propagation Model

IEEE Transactions on Antennas and Propagation, 2011
Antenna models relating voltage excitations to radiated fields are an important part of any electromagnetic measurement, with applications ranging from two-way communication systems to full-wave inverse scattering. Here, we derive a two-antenna model relating the multipole expansion of the fields radiated and received by antennas to S-parameter ...
Mark Haynes, Mahta Moghaddam
openaire   +1 more source

Parameter extraction of HEMT models from multibias s-parameters

2009 IEEE International Symposium on Circuits and Systems, 2009
The aim of the paper is to show how to identify the parameters of various nonlinear circuit models of a high electron mobility transistor from the multibias s-parameter dataset measured on a pHEMT device. A three-step identification procedure is described that uses tested optimization methods.
Martin Grábner, Josef Dobes
openaire   +1 more source

Modelling and optimization of on-chip spiral inductor in S-parameter domain

2004 IEEE International Symposium on Circuits and Systems (IEEE Cat. No.04CH37512), 2004
This work presents a methodology for optimizing the layout of on-chip spiral inductors using structural parameters and design frequency in a response surface method. The proposed method uses scattering parameters (S-parameter) to express inductor characteristics, and hence is independent of spiral geometries and equivalent circuit models. The procedure
Ken-ichi Okada 0001, Hiroaki Hoshino, Hidetoshi Onodera   +2 more
openaire   +1 more source

Bilateral S parameters model for time domain system simulation

2010 Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits, 2010
Download Citation Email Print Request Permissions Save to Project This paper focuses on behavioral modelling of passive RF blocks from frequency domain samples. This model has been implemented in Scilab/Scicos software which allows the resolution of implicit equations, therefore the implementation of bilateral behavioral models.
Mehdi, Hassan, Bennadji, Abderrezak, Mons, Sébastien, Ngoya, Edouard, Quéré, Raymond   +4 more
openaire   +2 more sources

A nonlinear S-parameters behavioral model for RF LNAs

2nd Asia Symposium on Quality Electronic Design (ASQED), 2010
A nonlinear behavioral model for radio frequency low noise amplifiers (LNA's) is presented. The model captures effects of nonlinearity, output power saturation, noise figure and port impedance mismatch. A high-level S-parameters approach is adopted during the model derivation.
Tamer Riad, Qi Jing
openaire   +1 more source