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S-Parameter Modeling and Analysis of RGLC Interconnect for Signal Integrity

2017 International Conference on Recent Trends in Electrical, Electronics and Computing Technologies (ICRTEECT), 2017
In high speed applications, the clock rates have approached giga-hertz ranges. Signal integrity has become a critical issue and is posing severe challenges to the designers. This necessitates interconnects capable of supporting broadband signals without degradation.
Bhattu. HariPrasad Naik   +2 more
openaire   +1 more source

Modeling bipolar transistors using multibias S parameter sets

Proceedings RAWCON 2001. 2001 IEEE Radio and Wireless Conference (Cat.No.01EX514), 2002
This paper presents a technique for accurate small-signal modeling of microwave bipolar transistors. Model parameters are extracted using measured S parameters in some bias points within the forward active region and then calculated in every point of that region by using a first order interpolation algorithm.
T. Biondi   +4 more
openaire   +1 more source

Hybrid s-parameters for modeling cavity-cable-PCB interactions

2007 IEEE Antennas and Propagation Society International Symposium, 2007
In this paper, hybrid S-matrix approach is demonstrated for relatively complex EMI/EMC problems involving cavity-cable-PCB interactions. The purpose of these simulations is to validate the hybrid S-matrix formulation for EMI illuminations other than plane waves.
Zulfiqar A. Khan   +2 more
openaire   +1 more source

An analytical model for the S-parameters of optically controlled GaAs MESFET's

Conference on Electron Devices, 2005 Spanish, 2005
A new analytical model for the microwave characteristics of optically controlled GaAs MESFET (OPFET) in terms of S-parameters is presented in this paper. The novelty of this model lies in the calculation of photo induced gate voltage. Using that photo voltage, we have analyzed the photo effects on intrinsic parameters of MESFET.
N.V.L. Narasimba Murty, S. Jit
openaire   +1 more source

Package model extraction from multi-port S-parameters

IEEE 10th Topical Meeting on Electrical Performance of Electronic Packaging (Cat. No. 01TH8565), 2002
This paper proposes a procedure for extracting package models from multi-port S-parameters. By utilizing all the elements in an n/spl times/n S-parameter matrix, the proposed deterministic procedure provides a better starting point for S-parameter optimization when compared with underdetermined extraction procedures based on multiple 2-port S-matrices ...
J.A. Andrews, S. Kabir
openaire   +1 more source

Automated Fitting and Rational Modeling Algorithm for EM-Based S-Parameter Data

2002
A smart adaptive algorithm is presented to model the spectral response of general passive planar electrical structures over a frequency range of interest, based on a limited number of data samples. Rational (pole-zero) functions are used to model and interpolate the S-parameter data obtained through full-wave electro-magnetic simulations.
openaire   +2 more sources

The Hubbard Model: A Computational Perspective

Annual Review of Condensed Matter Physics, 2022
Mingpu Qin   +2 more
exaly  

Modeling of wideband ferrite transformer using S parameters

2000
This paper focuses on the modeling of ferrite transformers for directional couplers up to 1 GHz. Four port scattering parameters of ferrite transformer were measured. On the basis of measured data, transformer model was built for the lower UHF range.
openaire   +1 more source

Modelling The Bipolar Transistor Using Multibias S Parameters Sets

2000
Modelling the bipolar transistor in the high frequency range is an involved problem that has been taken as subject of several works in literature, arousing the interest of many scientists. The reason is that several physical phenomena take place within the active region of the device and even if it’s possible to accurately model the static or low ...
openaire   +1 more source

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