Results 211 to 220 of about 1,084,361 (267)

S-parameter simulation with a new MOSFET model

2000 Asia-Pacific Microwave Conference. Proceedings (Cat. No.00TH8522), 2002
This paper presents a new MOSFET model, which has been implemented in SPICE3f4 for verification and testing. The DC and S-parameters of a MOSFET are measured and simulated. Simulations performed with the new model agree well with measurements.
null Guoli Qu, A.E. Parker
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Multipole and S-Parameter Antenna and Propagation Model

IEEE Transactions on Antennas and Propagation, 2011
Antenna models relating voltage excitations to radiated fields are an important part of any electromagnetic measurement, with applications ranging from two-way communication systems to full-wave inverse scattering. Here, we derive a two-antenna model relating the multipole expansion of the fields radiated and received by antennas to S-parameter ...
Mark Haynes, Mahta Moghaddam
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Parameter extraction of HEMT models from multibias s-parameters

2009 IEEE International Symposium on Circuits and Systems, 2009
The aim of the paper is to show how to identify the parameters of various nonlinear circuit models of a high electron mobility transistor from the multibias s-parameter dataset measured on a pHEMT device. A three-step identification procedure is described that uses tested optimization methods.
Martin Grábner, Josef Dobes
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S-parameter models for transient simulation in Verilog-A

Proceedings of the 2013 9th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), 2013
This work presents a new method to model analog modules for transient simulations with their S-parameters and DC behavior. The model can be used for verification of analog circuits in a system simulation where the modeling is necessary to speed up transient simulations in analog domain for systems like Sigma Delta modulators (SDM) or DC/DC converters ...
Tobias Maier, Dirk Droste, Michael Siegel   +2 more
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Bilateral S parameters model for time domain system simulation

2010 Workshop on Integrated Nonlinear Microwave and Millimeter-Wave Circuits, 2010
Download Citation Email Print Request Permissions Save to Project This paper focuses on behavioral modelling of passive RF blocks from frequency domain samples. This model has been implemented in Scilab/Scicos software which allows the resolution of implicit equations, therefore the implementation of bilateral behavioral models.
Mehdi, Hassan, Bennadji, Abderrezak, Mons, Sébastien, Ngoya, Edouard, Quéré, Raymond   +4 more
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Modelling and optimization of on-chip spiral inductor in S-parameter domain

2004 IEEE International Symposium on Circuits and Systems (IEEE Cat. No.04CH37512), 2004
This work presents a methodology for optimizing the layout of on-chip spiral inductors using structural parameters and design frequency in a response surface method. The proposed method uses scattering parameters (S-parameter) to express inductor characteristics, and hence is independent of spiral geometries and equivalent circuit models. The procedure
Ken-ichi Okada 0001, Hiroaki Hoshino, Hidetoshi Onodera   +2 more
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