Results 221 to 230 of about 1,084,361 (267)

A nonlinear S-parameters behavioral model for RF LNAs

2nd Asia Symposium on Quality Electronic Design (ASQED), 2010
A nonlinear behavioral model for radio frequency low noise amplifiers (LNA's) is presented. The model captures effects of nonlinearity, output power saturation, noise figure and port impedance mismatch. A high-level S-parameters approach is adopted during the model derivation.
Tamer Riad, Qi Jing
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Characterization and modeling of electronic packages using S-parameters

2008 7th International Caribbean Conference on Devices, Circuits and Systems, 2008
In this paper, we demonstrate the feasibility to characterize and model singled-ended electronic packages using experimental S-parameters up to 30 GHz. TRL calibration and transmission line theory techniques were applied to obtain the two-port network parameters of the packages from measurements performed to package-to-transmission line test structures.
Gaudencio Hernandez-Sosa, Gerardo Romo, Reydezel Torres-Torres   +2 more
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Exact s-parameter models boost SPICE

IEEE Circuits and Devices Magazine, 1995
Newly developed two-port wave models for PSPICE are adding a new level of analytical capability for designers of discrete devices. These models include one that perfectly reproduces a given 2- or 3-dimensional s-parameter field versus frequency. The s-parameters may be adjusted by simply adjusting the bias at an external control point. Further advances
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Improved S-parameter model for photonic crystal defects

SPIE Proceedings, 2010
A square lattice photonic crystal waveguide with dielectric pillars placed in a dielectric substrate with refractive indices 3.4 and 1.45 respectively, is investigated here. An equivalent transmission line model is utilized for wave propagation in the waveguide.
Preeti B. Patil, Raghunath K. Shevgaonkar   +1 more
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Accurate modeling of SMATV networks through "S" parameters

2009 9th International Conference on Telecommunication in Modern Satellite, Cable, and Broadcasting Services, 2009
This paper deals with a robust and accurate procedure for the layout and installation of a SMATV network within a building, that takes into account the actual performance of the various modules integrated into the network (head-end, splitters, taps, outlets, etc) working under “actual” conditions, as compared with the “ideal” specifications supplied by
Carlos Cortes, Miguel Angel del Casar, Cesar Briso   +2 more
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Accurate Package Modeling Based on S-Parameter Measurements

49th ARFTG Conference Digest, 1997
This paper presents experimental techniques for accurate package modeling including full L and C matrix characterisation based on VNA technique using RF probe station. Both package lead and bond wire parasitics are considered and determined separately. Advanced equivalent circuit models are developed for RFIC design which has been proven for first-pass
Fujiang Lin, Mahadevan Krishna Iyer, Huainan Ma, Khen Sang Tan, Masaaki Kasashima, Junichi Shibata, Hiroshi Nakamura   +6 more
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HEMT models for S-parameter and noise parameter extrapolation

1992 IEEE Microwave Symposium Digest MTT-S, 2003
Four models have been developed and assessed for fitting the measured noise parameters up to 26 GHz and S-parameters up to 400 GHz for a commercial HEMT (high electron mobility transistor) chip. The first treats the intrinsic noise sources as uncorrelated thermal sources.
M.T. Hickson, P. Gardner, D.K. Paul
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S-parameters characterization and sequence model of three-phase EMI filter

IECON 2013 - 39th Annual Conference of the IEEE Industrial Electronics Society, 2013
This paper investigates the characterization of three-phase EMI filter using S-parameters and the use of sequence model to fully describe the high frequency behavior. Characterization of three-phase EMI filter helps to understand the influence of real filter on overall EMI performance and provides information for filter selection or design.
Junsheng Wei, Dieter Gerling, Marek Galek   +2 more
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A consistent and scalable PSPICE HFET-Model for DC- and S-parameter-simulation

Proceedings of the 2002 International Conference on Microelectronic Test Structures, 2002. ICMTS 2002., 2003
For simulation of digital circuits realized in Direct Coupled FET Logic (DCFL) using depletion-type as well as enhancement-type Heterostructure-Field Effect Transistors (HFET) a consistent model that is able to describe both types of transistors is necessary.
Ehrich, Silja, Bertenburg, Ralf M., Agethen, Michael, Brennemann, Andreas, Brockerhoff, Wolfgang, Tegude, Franz-Josef   +5 more
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An Accurate FET Modelling from Measured S-Parameters

MTT-S International Microwave Symposium Digest, 2005
A new modelling algorithm has been developed which extracts a small-signal microwave equivalent circuit of an FET from measured S-parameters. The combinations of properly selected circuit elements with an S-parameter to be least-squares fitted greatly improve the accuracy and consistency of modelling, The absolute accuracy of determining element values
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