Results 141 to 150 of about 42,237 (297)

An “s‐Electron” Donor Band Driven Metallic Ferromagnetism in Co‐Doped ZnO Films

open access: yesAdvanced Science, EarlyView.
Hard X‐ray photoemission spectroscopy with polarization dependence enables orbital‐selective probing of buried electronic states. By tuning the incident light's polarization vector, symmetry‐resolved spectral features of core and valence states are revealed, offering deeper insights into orbital hybridization and spin–orbit interactions in functional ...
Pei‐Yu Chuang   +9 more
wiley   +1 more source

Unraveling the Atomic Mechanism of the Crystalline Phase‐Dependent Structural Features and Special Spectral Design of α‐, β‐, and Ɛ‐Ga₂O₃

open access: yesAdvanced Science, EarlyView.
Understanding atomic‐scale phase transformations and their spectral responses is key to tailoring semiconductor properties for specific applications. Phase‐dependent thermodynamic responses in α‐, β‐, and ε‐Ga₂O₃ reveal distinct lattice energy dissipation pathways.
Xinqing Han   +6 more
wiley   +1 more source

Divergent Delivery and Expression Kinetics of Lipid and Polymeric Nanoparticles across mRNA Modalities

open access: yesAdvanced Science, EarlyView.
Self‐amplifying (saRNA), linear (linRNA), and circular (circRNA) mRNAs are compared under standardized conditions using lipid nanoparticles (LNPs) and pABOL polymer. saRNA achieved superior expression, while linRNA and circRNA performance varied based on untranslated region elements and delivery method.
Irafasha C. Casmil   +12 more
wiley   +1 more source

TITANIUM : SAPPHIRE LASER PUMPED BY COPPER VAPOR LASER [PDF]

open access: green, 1991
F. J. OLAWSKY   +3 more
openalex   +1 more source

Assessment of Trapping Phenomena in As‐Grown and Thermally‐Treated Si‐Doped κ‐Ga2O3 Layers via Optical Admittance Spectroscopy

open access: yesAdvanced Electronic Materials, EarlyView.
Steady‐state and transient photocapacity studies, conducted with light at various wavelengths in the UVC, UVB, and UVA ranges, enable the study of acceptor traps, such as gallium vacancies and their complexes with hydrogen. These investigations allow the determination of spatial profiles and the measurement of response times to light on and off ...
Payam Rajabi Kalvani   +12 more
wiley   +1 more source

Physical Model Development for Fabricating MIS‐Anode‐Based 1100 V AlGaN/GaN‐Based Lateral Schottky Barrier Diodes Grown on Silicon Substrate with Low Leakage Current

open access: yesAdvanced Electronic Materials, EarlyView.
AlGaN/GaN‐based SBDs with a metal/Al2O3/GaN (MIS) Schottky contact are designed and fabricated, which demonstrate a three‐order reduction in leakage current and achieve a breakdown voltage of ≈1100 V. It also introduces refined physical models for more accurate simulations of GaN‐based power devices on Si substrates. The revised models predict enhanced
Jingting He   +10 more
wiley   +1 more source

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