Results 141 to 150 of about 42,237 (297)
X-ray Diffraction Investigation of Epitaxial Layers of CdTe on Sapphire [PDF]
A. W. Stevenson, Geoff N. Pain
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An “s‐Electron” Donor Band Driven Metallic Ferromagnetism in Co‐Doped ZnO Films
Hard X‐ray photoemission spectroscopy with polarization dependence enables orbital‐selective probing of buried electronic states. By tuning the incident light's polarization vector, symmetry‐resolved spectral features of core and valence states are revealed, offering deeper insights into orbital hybridization and spin–orbit interactions in functional ...
Pei‐Yu Chuang+9 more
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Understanding atomic‐scale phase transformations and their spectral responses is key to tailoring semiconductor properties for specific applications. Phase‐dependent thermodynamic responses in α‐, β‐, and ε‐Ga₂O₃ reveal distinct lattice energy dissipation pathways.
Xinqing Han+6 more
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Self‐amplifying (saRNA), linear (linRNA), and circular (circRNA) mRNAs are compared under standardized conditions using lipid nanoparticles (LNPs) and pABOL polymer. saRNA achieved superior expression, while linRNA and circRNA performance varied based on untranslated region elements and delivery method.
Irafasha C. Casmil+12 more
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The propagation characteristics of acoustic surface waves and the applications of power ultrasound based on AlN/GaN piezoelectric thin films. [PDF]
Zhang T+5 more
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TITANIUM : SAPPHIRE LASER PUMPED BY COPPER VAPOR LASER [PDF]
F. J. OLAWSKY+3 more
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Steady‐state and transient photocapacity studies, conducted with light at various wavelengths in the UVC, UVB, and UVA ranges, enable the study of acceptor traps, such as gallium vacancies and their complexes with hydrogen. These investigations allow the determination of spatial profiles and the measurement of response times to light on and off ...
Payam Rajabi Kalvani+12 more
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Recent Advances in Chemical Vapor Deposition of Hexagonal Boron Nitride on Insulating Substrates. [PDF]
Xu H+5 more
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AlGaN/GaN‐based SBDs with a metal/Al2O3/GaN (MIS) Schottky contact are designed and fabricated, which demonstrate a three‐order reduction in leakage current and achieve a breakdown voltage of ≈1100 V. It also introduces refined physical models for more accurate simulations of GaN‐based power devices on Si substrates. The revised models predict enhanced
Jingting He+10 more
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