Results 21 to 30 of about 149,288 (320)

Contrast Experiments in Dielectrophoresis Polishing (DEPP)/Chemical Mechanical Polishing (CMP) of Sapphire Substrate

Applied Sciences, 2019
The broad applications of sapphire substrates in many fields warrants an urgent demand for a highly efficient and high precision polishing method for the sapphire substrates.
Tianchen Zhao, Julong Yuan, Qianfa Deng, Kaiping Feng, Zhaozhong Zhou, Xu Wang   +5 more
doaj   +1 more source

Multiphoton Absorption Simulation of Sapphire Substrate under the Action of Femtosecond Laser for Larger Density of Pattern-Related Process Windows

Micromachines, 2021
It is essential to develop pattern-related process windows on substrate surface for reducing the dislocation density of wide bandgap semiconductor film growth.
Xintian Cai, Chaoyue Ji, Changkai Li, Zhiqiang Tian, Xuan Wang, Cheng Lei, Sheng Liu   +6 more
doaj   +1 more source

Adhesive-Free Bonding of Monolithic Sapphire for Pressure Sensing in Extreme Environments

Sensors, 2018
This paper presents a monolithic sapphire pressure sensor that is constructed from two commercially available sapphire wafers through a combination of reactive-ion etching and wafer bonding.
Jihaeng Yi
doaj   +1 more source

Novel model of material removal rate on ultrasonic-assisted chemical mechanical polishing for sapphire

Friction, 2023
Ultrasonic-assisted chemical mechanical polishing (UA-CMP) can greatly improve the sapphire material removal and surface quality, but its polishing mechanism is still unclear.
Mufang Zhou, Min Zhong, Wenhu Xu
doaj   +1 more source

Sapphire Waveguide Lasers

Integrated Photonics Research, 2001
The fabrication and operation of titanium-indiffused sapphire waveguide lasers with pump power thresholds of 210mW at 514.5nm are reported. Ga-indiffused sapphire waveguides for potential integration of passive and active devices for laser control are also described.
Wilkinson, J.S., Apostolopoulos, V., Hickey, L.M.B.   +2 more
openaire   +2 more sources

Analysis of Nanoscratch Mechanism of C-Plane Sapphire with the Aid of Molecular Dynamics Simulation of Hcp Crystal

Nanomaterials, 2021
In this study, single groove nanoscratch experiments using a friction force microscope (FFM) with a monocrystalline diamond tip were conducted on a c-plane sapphire wafer to analyze the ductile-regime removal and deformation mechanism including the ...
Wangpiao Lin, Naohiko Yano, Jun Shimizu, Libo Zhou, Teppei Onuki, Hirotaka Ojima   +5 more
doaj   +1 more source

Sapphire

Proceedings of the VLDB Endowment, 2016
There is currently a large amount of publicly accessible structured data available as RDF data sets. For example, the Linked Open Data (LOD) cloud now consists of thousands of RDF data sets with over 30 billion triples, and the number and size of the data sets is continuously growing.
El-Roby, Ahmed, Ammar, Khaled, Aboulnaga, Ashraf, Lin, Jimmy   +3 more
openaire   +2 more sources

ZnO layers deposited by Atomic Layer Deposition [PDF]

, 2013
The structure of 40 nm thick epitaxial ZnO layers grown on single crystalline sapphire and GaN substrates by atomic layer deposition has been studied using transmission electron microscopy.
A Kovács, B Pécz, Ku CS, Z Lábadi, Zs Baji   +4 more
core   +1 more source

Change in equilibrium position of misfit dislocations at the GaN/sapphire interface by Si-ion implantation into sapphire. II. Electron energy loss spectroscopic study

AIP Advances, 2015
In Part I, we have shown that the addition of Si into sapphire by ion implantationmakes the sapphire substrate elastically softer than for the undoped sapphire.
Sung Bo Lee, Young-Min Kim, Heung Nam Han   +2 more
doaj   +1 more source

Analysis of heat transfer processes for sapphire growth by horizontal directed crystallization method [PDF]

Journal of Advanced Dielectrics, 2020
This research summarizes the analytical and experimental results of heat-transfer processes influence on defects formation during sapphire crystal growth by horizontal directed crystallization method (HDC). The shape of solid-melt interface significantly
Yu. V. Klunnikova, S. P. Malyukov, A. V. Filimonov, N. Zhang   +3 more
doaj   +1 more source