Results 31 to 40 of about 131,690 (295)

Cryogenic measurement of the optical absorption coefficient in sapphire crystals at 1.064(micro)m for the Large-scale Cryogenic Gravitational wave Telescope [PDF]

, 2001
We have applied laser calorimetry to the measurement of optical absorption in mono-crystalline sapphire at cryogenic temperatures. Sapphire is a promising candidate for the mirror substrates of the Large-scale Cryogenic Gravitational wave Telescope.
Abramovici, Akira Yamamoto, Baurès, Blair, Bradaschina, Braginski, Cerdonio, Daisuke Tatsumi, Danzmann, Hass, Hello, Hordvik, Kazuaki Kuroda, Khattak, Kuroda, Kuroda, Liu, Masatake Ohashi, Pike, Saulson, Shinji Miyoki, Tagoshi, Takakazu Shintomi, Takashi Uchiyama, Takayuki Tomaru, Toshikazu Suzuki, Uchiyama, Uchiyama, Winkler   +28 more
core   +2 more sources

Origin of Difference in Photocatalytic Activity of ZnO (002) Grown on a- and c-Face Sapphire

International Journal of Photoenergy, 2014
The oriented (002) ZnO films were grown on a- and c-face sapphire by pulsed laser deposition. The X-ray diffraction analysis revealed that the oriented (002) ZnO films were epitaxially grown on the substrate successfully.
Guoqiang Li, Bingyang Sun, Yali Wang, Zhou Wu, Weifeng Zhang   +4 more
doaj   +1 more source

Enhanced crystalline quality of non-polar a-plane AlGaN epitaxial film grown with Al-composition-graded AlGaN intermediate layer

Materials Research Express, 2021
The non-polar a -AlGaN epitaxial film was successfully grown on the semi-polar r- sapphire substrate by metal-organic chemical vapor deposition technique.
Abbas Nasir, Xiong Zhang, Liang Lu, Jin Zhang, Jiadong Lyu, Yiping Cui   +5 more
doaj   +1 more source

Influence of crystal anisotropy and process parameters on surface shape deviation of sapphire slicing

Jin'gangshi yu moliao moju gongcheng, 2023
Due to the anisotropy of sapphire crystal material, the mechanical properties vary in multi-wire saw slicing based on different cutting positions. This variation leads to the deviation of the diamond wire in the vertical feed direction, resulting in the ...
Chao WANG, Peiqi GE, Jikai He, Xinhui WANG   +3 more
doaj   +1 more source

Testing Lorentz Invariance by Comparing Light Propagation in Vacuum and Matter

, 2010
We present a Michelson-Morley type experiment for testing the isotropy of the speed of light in vacuum and matter. The experiment compares the resonance frequency of a monolithic optical sapphire resonator with the resonance frequency of an orthogonal ...
Döringshoff, K., Herrmann, S., Kovalchuk, E. V., Möhle, K., Nagel, M., Peters, A., Senger, A.   +6 more
core   +1 more source

Heteroepitaxial Growth of High-Quality and Crack-Free AlN Film on Sapphire Substrate with Nanometer-Scale-Thick AlN Nucleation Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes

Nanomaterials, 2019
High-quality and crack-free aluminum nitride (AlN) film on sapphire substrate is the foundation for high-efficiency aluminum gallium nitride (AlGaN)-based deep ultraviolet light-emitting diodes (DUV LEDs). We reported the growth of high-quality and crack-
Jie Zhao, Hongpo Hu, Yu Lei, Hui Wan, Liyan Gong, Shengjun Zhou   +5 more
doaj   +1 more source

High-Purity Corundum as Support for Affinity Extractions from Complex Samples

Separations, 2022
Nonporous corundum powder, known as an abrasive material in the industry, was functionalized covalently with protein binders to isolate and enrich specific proteins from complex matrices.
Jule L. Völzke, Parya Hodjat Shamami, Kornelia Gawlitza, Ines Feldmann, Annett Zimathies, Klas Meyer, Michael G. Weller   +6 more
doaj   +1 more source

The effect of crystal orientation on the cryogenic strength of hydroxide catalysis bonded sapphire [PDF]

, 2015
Hydroxide catalysis bonding has been used in gravitational wave detectors to precisely and securely join components of quasi-monolithic silica suspensions.
Douglas, R., Haughian, K., Hough, J., Khalaidovski, A., Rowan, S., Suzuki, T., van Veggel, A.A., Yamamoto, K.   +7 more
core   +1 more source

Change in equilibrium position of misfit dislocations at the GaN/sapphire interface by Si-ion implantation into sapphire—I. Microstructural characterization

AIP Advances, 2015
Much research has been done to reduce dislocation densities for the growth of GaN on sapphire, but has paid little attention to the elastic behavior at the GaN/sapphire interface.
Sung Bo Lee, Jin-Woo Ju, Young-Min Kim, Seung Jo Yoo, Jin-Gyu Kim, Heung Nam Han, Dong Nyung Lee   +6 more
doaj   +1 more source

Graphene microwave transistors on sapphire substrates

, 2011
We have developed metal-oxide graphene field-effect transistors (MOGFETs) on sapphire substrates working at microwave frequencies. For monolayers, we obtain a transit frequency up to ~ 80 GHz for a gate length of 200 nm, and a power gain maximum ...
A. C. Betz, B. Plaçais, C. Benz, E. Pallecchi, H. v. Löhneysen, Lee J., Lin Y.-M., Lin Y.-M., Meric I., Pozar D. M., R. Danneau   +10 more
core   +1 more source